Cypress CY62158DV30LL-45ZXI 8-mbit (1024k x 8) mobl static ram Datasheet

CY62158DV30
MoBL
8-Mbit (1024K x 8) MoBL Static RAM
This is ideal for providing More Battery Life™ (MoBL) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption. The device can be put into
standby mode reducing power consumption by 85% when
deselected (CE1 HIGH or CE2 LOW).
Features
• Very high speed: 45 ns, 55 ns and 70 ns
— Wide voltage range: 2.20V – 3.60V
• Ultra-low active power
— Typical active current:1.5 mA @ f = 1 MHz
— Typical active current: 12 mA @ f = fmax
• Ultra-low standby power
• Easy memory expansion with CE1, CE2, and OE
features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball BGA, 48-pin TSOPI, and
44-pin TSOPII
Functional Description[1]
The CY62158DV30 is a high-performance CMOS static RAMs
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
Writing to the device is accomplished by taking Chip Enable 1
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is
then written into the location specified on the address pins (A0
through A19).
Reading from the device is accomplished by taking Chip
Enable 1 (CE1) and Output Enable (OE) LOW and Chip
Enable 2 (CE2) HIGH while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW and CE2 HIGH and WE
LOW). See the truth table for a complete description of read
and write modes.
Logic Block Diagram
I/O1
1024K x 8
ARRAY
I/O2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
I/O0
Data in Drivers
I/O3
I/O4
I/O5
COLUMN
DECODER
CE1
CE2
I/O6
POWER
DOWN
I/O7
A13
A14
A15
A16
A17
A18
A19
WE
OE
Note:
1. For best practice recommendations, please refer to the Cypress application note entitled System Design Guidelines, available at http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05391 Rev. *D
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised June 17, 2004
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CY62158DV30
MoBL
Pin Configuration[2, 3, 4]
FBGA
Top View
1
2
3
4
5
6
DNU
OE
A0
A1
A2
CE2
A
DNU DNU
A3
A4
CE1 DNU
B
I/O0
DNU
A5
A6
DNU
I/O4
C
VSS
I/O1
A17
A7
I/O5
VCC
D
VCC
I/O2
DNU
A16
I/O6
VSS
E
I/O3
DNU
A14
A15
DNU
I/O7
F
DNU
NC
A12
A13
WE
DNU
G
A18
A8
A9
A10
A11
A19
H
A
A
48TSOPI
44 TSOPII
Top View
Top View
A15
A14
A13
A12
A11
A10
A9
A8
NC
DNU
WE
CE2
DNU
DNU
DNU
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
Vss
A19
I/O7
DNU
I/O6
DNU
I/O5
DNU
I/O4
Vcc
DNU
I/O3
DNU
I/O2
DNU
I/O1
DNU
I/O0
OE
Vss
CE1
A0
A4
A3
A2
A1
A0
CE1
DNU
DNU
I/O0
I/O1
VCC
VSS
I/O2
I/O3
DNU
DNU
WE
A19
A18
A17
A16
A15
1
44
2
3
43
42
4
41
40
39
38
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
CE2
A8
DNU
DNU
I/O7
I/O6
VSS
VCC
I/O5
I/O4
DNU
DNU
A9
A10
A11
A12
A13
A14
Notes:
2. NC pins are not internally connected to the die.
3. DNU pins have to be left floating.
4. The BYTE pin in the TSOPI package has to be tied LOW to use the device as 1M x 8 SRAM. The 48-TSOPI package can also be used as a 512K × 16 SRAM
by tying the BYTE signal HIGH. For 512K x 16 functionality, please refer to the CY62157DV30 data sheet.
Document #: 38-05391 Rev. *D
Page 2 of 11
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CY62158DV30
MoBL
Maximum Ratings
Output Current into Outputs (LOW)............................. 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Supply Voltage to Ground Potential .–0.3V to Vcc(max) + 0.3V
Product
Ambient
Temperature
(TA)
Range
DC Voltage Applied to Outputs
in High-Z State[5, 6] ......................... –0.3V to VCC(max) + 0.3V
CY62158DV30L
DC Input Voltage[5, 6] ..................... –0.3V to VCC(max) + 0.3V
CY62158DV30LL
VCC[7]
Industrial –40°C to +85°C 2.2V – 3.6V
Product Portfolio
Power Dissipation
Operating ICC (mA)
VCC Range (V)
Max.
Speed
(ns)
Typ.[8]
3.0
3.6
45,55,70
3.0
3.6
45,55,70
Min.
Typ.[8]
CY62158DV30L
2.2
CY62158DV30LL
2.2
Product
f = 1 MHz
f = fmax
Standby ISB2(µA)
Max.
Typ.[8]
Max.
Typ.[8]
Max.
1.5
3
12
20
2
20
1.5
3
12
15
2
8
Electrical Characteristics Over the Operating Range
CY62158DV30
Parameter
Description
Min. Typ.[8]
Test Conditions
VOH
Output HIGH Voltage
IOH = –0.1 mA
VOL
Output LOW Voltage
IOL = 2.1mA
VCC = 2.70V
VIH
Input HIGH Voltage
VCC = 2.2V to 2.7V
VIIL
Input LOW Voltage
VCC= 2.7V to 3.6V
IIX
Input Leakage Current
GND < VI < VCC
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
VCC = 2.20V
2.0
IOH = –1.0 mA
VCC = 2.70V
2.4
IOL = 0.1 mA
VCC = 2.20V
Max.
V
V
V
0.4
V
VCC + 0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC + 0.3V
V
VCC = 2.2V to 2.7V
–0.3
0.6
V
–0.3
0.8
V
–1
+1
µA
–1
VCC = VCCmax L
IOUT = 0 mA LL
CMOS levels
L
12
+1
µA
20
mA
15
mA
1.5
3
mA
LL
ISB2
0.4
1.8
f = 1 MHz
ISB1
Unit
3
mA
Automatic CE
Power-down Current —
CMOS Inputs
CE1 > VCC− 0.2V, CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fMAX (Address and Data Only),
f = 0 (OE, and WE), VCC = 3.60V
L
2
20
µA
LL
2
8
Automatic CE
Power-down Current —
CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
L
2
20
LL
2
8
µA
Notes:
5. VIL(min.) = –2.0V for pulse durations less than 20 ns.
6. VIH(max)= VCC+0.75V for pulse duration less than 20ns.
7. Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
Document #: 38-05391 Rev. *D
Page 3 of 11
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CY62158DV30
MoBL
Capacitance[9, 10.]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
Max.
Unit
10
pF
10
pF
Thermal Resistance
Parameter
Description
ΘJA
Thermal Resistance[9]
(Junction to Ambient)
ΘJC
Thermal Resistance[9]
(Junction to Case)
Test Conditions
BGA
TSOP II
TSOP I
Unit
Still Air, soldered on a 3 x 4.5 inch, four-layer
printed circuit board
72
75.13
74.88
°C/W
8.86
8.95
8.6
°C/W
AC Test Loads and Waveforms [11]
R1
VCC
ALL INPUT PULSES
OUTPUT
VCC
R2
30 pF / 50 pF
GND
10%
90%
10%
90%
Fall time: 1 V/ns
Rise Time: 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
THÉVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameters
2.50V
3.0V
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR[9]
Chip Deselect to Data
Retention Time
tR[12]
Operation Recovery
Time
Conditions
Min.
Typ.[8]
Max.
Unit
10
µA
4
µA
1.5
VCC = 1.5V
L
CE1 > VCC − 0.2V or CE2 <0.2V
LL
VIN > VCC − 0.2V or VIN < 0.2V
V
0
ns
tRC
ns
Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10. The input capacitance on the CE2 pin is 15 pF.
11. Test condition for the 45 ns part is a load capacitance of 30 pF.
12. Full Device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
Document #: 38-05391 Rev. *D
Page 4 of 11
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CY62158DV30
MoBL
Data Retention Waveform
DATA RETENTION MODE
VCC
VCC(min)
VDR > 1.5 V
VCC(min)
tR
tCDR
CE1
or
CE2
Switching Characteristics Over the Operating Range [13]
45 ns [11]
Parameter
Description
Min.
Max.
55 ns
Min.
70 ns
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1 LOW and CE2 HIGH to Data Valid
45
55
70
ns
tDOE
OE LOW to Data Valid
25
25
35
ns
tLZOE
OE LOW to Low
tHZOE
10
CE1 HIGH or CE2 LOW to High
tPU
CE1 LOW and CE2 HIGH to Power-Up
CE1 HIGH or CE2 LOW to Power-Down
10
0
45
ns
25
20
ns
ns
25
10
55
ns
ns
5
10
0
70
20
20
ns
10
5
10
Z[14, 15]
tHZCE
Write
55
15
Z[14]
70
10
5
Z[14, 15]
CE1 LOW and CE2 HIGH to Low
tPD
55
45
Z[14]
OE HIGH to High
tLZCE
45
ns
ns
25
ns
Cycle[16]
tWC
Write Cycle Time
45
55
70
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
40
40
60
ns
tAW
Address Set-Up to Write End
40
40
60
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
35
40
45
ns
tSD
Data Set-Up to Write End
25
25
30
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
tLZWE
WE LOW to High
Z[14, 15]
[14]
WE HIGH to Low Z
15
10
20
10
25
10
ns
ns
Notes:
13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3ns or less (1V/ns), timing reference levels of VCC(typ.)/2, input
pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.
14. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
15. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state.
16. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
Document #: 38-05391 Rev. *D
Page 5 of 11
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CY62158DV30
MoBL
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
[17, 18]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [18, 19]
ADDRESS
tRC
CE1
CE2
tACE
OE
tHZOE
tDOE
DATA OUT
tHZCE
tLZOE
HIGH IMPEDANCE
DATA VALID
tLZCE
tPD
tPU
50%
50%
SUPPLY
CURRENT
Write Cycle No. 1(WE Controlled)
HIGH
IMPEDANCE
ICC
ISB
[16, 20, 22]
tWC
ADDRESS
tSCE
CE1
CE2
tAW
tSA
tHA
tPWE
WE
OE
tSD
DATA I/O
tHD
VALID DATA
NOTE [20]
tHZOE
Notes:
17. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
18. WE is HIGH for read cycle.
19. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
Document #: 38-05391 Rev. *D
Page 6 of 11
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CY62158DV30
MoBL
Switching Waveforms (continued)
Write Cycle No. 2(CE1 or CE2 Controlled)
[16, 20, 22]
tWC
ADDRESS
tSCE
CE1
tSA
CE2
tHA
tAW
tPWE
WE
OE
tSD
DATA I/O
tHD
VALID DATA
Write Cycle No. 3 (WE Controlled, OE LOW)
[22]
tWC
ADDRESS
tSCE
CE1
CE2
tAW
tSA
tHA
tPWE
WE
tSD
NOTE
DATAI/O
[21]
tHD
VALID DATA
tLZWE
tHZWE
Truth Table
CE1
CE2
WE
OE
H
X
X
X
High Z
Inputs/Outputs
Deselect/Power-down
Mode
Standby (ISB)
Power
X
L
X
X
High Z
Deselect/Power-down
Standby (ISB)
L
H
H
L
Data Out (I/O0-I/O7)
Read
Active (ICC)
L
H
H
H
High Z
Output Disabled
Active (Icc)
L
H
L
X
Data in (I/O0-I/O7)
Write
Active (Icc)
Notes:
20. Data I/O is high impedance if OE = VIH.
21. During this period, the I/Os are in output state and input signals should not be applied.
22. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state.
Document #: 38-05391 Rev. *D
Page 7 of 11
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CY62158DV30
MoBL
Ordering Information
Speed
(ns)
45
Ordering Code
CY62158DV30L-45BVI
Package
Name
BV48A
Package Type
Operating
Range
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm)
Industrial
Z-48
48 Pin TSOP I (Pb-free)
Industrial
ZS-44
44 Pin TSOP II (Pb-free)
Industrial
BV48A
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm)
Industrial
Z-48
48 Pin TSOP I (Pb-free)
Industrial
ZS-44
44 Pin TSOP II (Pb-free)
Industrial
BV48A
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm)
Industrial
Z-48
48 Pin TSOP I (Pb-free)
Industrial
ZS-44
44 Pin TSOP II (Pb-free)
Industrial
CY62158DV30LL-45BVI
45
CY62158DV30L-45ZXI
CY62158DV30LL-45ZXI
45
CY62158DV30L-45ZSXI
CY62158DV30LL-45ZSXI
55
CY62158DV30L-55BVI
CY62158DV30LL-55BVI
55
CY62158DV30L-55ZXI
CY62158DV30LL-55ZXI
55
CY62158DV30L-55ZSXI
CY62158DV30LL-55ZSXI
70
CY62158DV30L-70BVI
CY62158DV30LL-70BVI
70
CY62158DV30L-70ZXI
CY62158DV30LL-70ZXI
70
CY62158DV30L-70ZSXI
CY62158DV30LL-70ZSXI
Document #: 38-05391 Rev. *D
Page 8 of 11
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CY62158DV30
MoBL
Package Diagrams
48-lead VFBGA (6 x 8 x 1 mm) BV48A
51-85150-*B
48-Lead TSOP I (12 mm x 18.4 mm x 1.0 mm) Z48A
DIMENSIONS IN INCHES[MM] MIN.
MAX.
JEDEC # MO-142
0.037[0.95]
0.041[1.05]
N
1
0.020[0.50]
TYP.
0.472[12.00]
0.007[0.17]
0.011[0.27]
0.002[0.05]
0.006[0.15]
0.724 [18.40]
0.047[1.20]
MAX.
SEATING PLANE
0.004[0.10]
0.787[20.00]
0.004[0.10]
0.008[0.21]
0.010[0.25]
GAUGE PLANE
0°-5°
Document #: 38-05391 Rev. *D
0.020[0.50]
0.028[0.70]
51-85183-*A
Page 9 of 11
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CY62158DV30
MoBL
Package Diagrams (continued)
44-pin TSOP II ZS44
51-85087-*A
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company
names mentioned in this document are trademarks of their respective holders.
Document #: 38-05391 Rev. *D
Page 10 of 11
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY62158DV30
MoBL
Document History Page
Document Title:CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL Static RAM
Document Number: 38-05391
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
126293
05/22/03
HRT
New Data Sheet
*A
131014
11/25/03
CBD
Change from Advance to Preliminary
*B
133114
01/24/04
CBD
Minor Change: MPN change and upload
*C
211602
See ECN
AJU
Change from Preliminary to Final
Changed Marketing part # from CY62158DV to CY62158DV30 in the “Title” and
in the “Ordering Information” table
Added footnote 4 and 10
Modified footnote 7 to include ramp time and wait time
Removed MAX value for VDR on “Data Retention Characteristics” table
Changed ordering code for Pb-free parts
Modified voltage limits in Maximum Ratings section
*D
239450
See ECN
SYT/AJU
Document #: 38-05391 Rev. *D
Added footnote #11
Added 45 ns and 70 ns Speed Bins
Page 11 of 11
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