MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK39V4045 14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally impedance matched High output power P1dB=8W (TYP.) @f=14.0~14.5GHz High linear power gain GLP=5.5dB (TYP.) @f=14.0~14.5GHz High power added efficiency ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB APPLICATION For use in 14.0~14.5GHz band amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 6.0 A IGR Reverse gate current -18 mA IGF Forward gate current 36 mA PT Total power dissipation Tch Channel temperature *1 Tstg Storage temperature *1 : Tc=25˚C 42.8 W 175 ˚C -65 ~ +175 ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Test conditions Parameter Limits Min. Typ. Max Unit IDSS Saturated drain current VDS=3V, VDS=0V — 4.0 6.0 A gm Transconductance VDS=3V, ID=2.4A 1.2 2.0 — S VGS (off) Gate to source cut-off voltage VDS=3V, ID=20mA -2 — -5 V P1dB Output power at 1dB gain compression 38.5 39.0 — dBm GLP Linear power gain 4.5 5.5 — dB ηadd Power added efficiency — 20 — % Rth (ch-c) Thermal resistance — — 3.5 ˚C/W VDS=10V, ID=2.4A, f=14.0~14.5GHz *1 ∆Vf method *1 : Channel to case MITSUBISHI ELECTRIC