PD-94044
IRF5801
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
VDSS
RDS(on) max
ID
200V
2.2Ω
Ω
0.6A
A
D
1
6
D
2
5
D
G
3
4
S
D
TSOP-6
T op V iew
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
0.6
0.48
4.8
2.0
0.016
± 30
9.6
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient
Typ.
Max.
Units
–––
62.5
°C/W
Notes through are on page 8
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1
01/17/01
IRF5801
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
2.2
Ω
VGS = 10V, ID = 0.36A
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
0.44 ––– –––
S
VDS = 50V, ID = 0.36A
–––
3.9 –––
ID = 0.36A
–––
0.8 –––
nC
VDS = 160V
–––
2.2 –––
VGS = 10V
–––
6.5 –––
VDD = 100V
–––
8.0 –––
ID = 0.36A
ns
–––
8.8 –––
RG = 53Ω
–––
19 –––
VGS = 10V
–––
88 –––
VGS = 0V
–––
18 –––
VDS = 25V
–––
6.3 –––
pF
ƒ = 1.0MHz
––– 102 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
8.4 –––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
26 –––
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
9.9
0.6
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.8
A
–––
–––
4.8
–––
–––
–––
–––
45
54
1.3
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.36A, VGS = 0V
TJ = 25°C, I F = 0.36A
di/dt = 100A/µs
D
S
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IRF5801
10
10
VGS
15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
VGS
15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
6.0V
0.1
1
6.0V
0.1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.01
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 150° C
1
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
10
6
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
1
12
ID = 0.6A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5801
V GS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
120
Coss = Cds + Cgd
Ciss
80
Coss
40
Crss
VGS , Gate-to-Source Voltage (V)
20
160
ID = 0.36A
V DS= 160V
V DS= 100V
V DS= 40V
16
12
8
4
0
1
10
100
0
1000
0
1
2
3
4
5
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
1
TJ = 25 ° C
10
10us
1
100us
1ms
0.1
10ms
0.1
0.4
4
V GS = 0 V
0.5
0.6
0.7
0.8
0.9
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1.0
1
10
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1000
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IRF5801
0.6
VDS
VGS
ID , Drain Current (A)
0.5
RD
D.U.T.
RG
+
-VDD
0.4
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.3
0.2
Fig 10a. Switching Time Test Circuit
VDS
0.1
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF5801
(
RDS(on), Drain-to -Source On Resistance Ω)
RDS ( on ) , Drain-to-Source On Resistance (Ω )
12.000
10.000
8.000
VGS = 10V
6.000
4.000
2.000
0.000
0
1
2
3
4
2.500
2.250
2.000
ID = 0.6A
1.750
1.500
6.0
5
7.0
8.0
9.0
10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
IAS
tp
DRIVER
+
V
- DD
TOP
20
BOTTOM
15
10
5
0
25
A
ID
0.4A
0.7A
0.9A
50
75
100
125
150
Starting T J , Junction Temperature ( ° C)
0.0 1 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
25
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF5801
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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7
IRF5801
TSOP-6 Tape & Reel Information
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 27mH
RG = 25Ω, IAS = 0.36A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10sec.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 0.36A, di/dt ≤ 93A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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