www.fairchildsemi.com FS6S1565RB Fairchild Power Switch(FPS) Features Description • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. Wide operating frequency range up to 150Khz Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Auto restart mode) Over voltage protection (Auto restart mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Auto restart mode) Under voltage lockout Internal high voltage sense FET Eternal sync terminal/Soft start TO-3P-5L 1 Internal Block Diagram 3 Vref 1 Vpp=5.8/7.2V Internal Bias OSC 5 Vref Vref UVLO Burst mode controller Vfb Vth=1V S Ron Q R Vcc Vth=11V/12V Roff PWM 4 2.5R R Ifb Vref Vfb Offset Vcc Rsenese Idelay OCL OLP Vth=7.5V S Vcc Vth=30V OVP UVLO Reset (Vcc=9V) R Q Q Filter (130nsec) S R UVLO Reset (Vcc=9V) Vth=1V 2 TS D (Tj=160℃) Rev.1.0.1 ©2001 Fairchild Semiconductor Corporation FS6S1565RB Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Value Unit VDSS 650 V VDGR 650 V Gate-source (GND) Voltage VGS ±30 V Drain current pulsed (2) IDM 60 ADC EAS 1040 mJ IAS 37 A Drain-source(GND) voltage (1) Drain-Gate Voltage (RGS=1MΩ) Single pulsed avalanche energy (3) Single Pulsed Avalanche current (4) Continuous drain current (Tc = 25°C) ID 15 ADC Continuous drain current (TC=100°C) ID 9.5 ADC VCC 35 V VFB −0.3 to VCC V VS_S −0.3 to 10 V Supply voltage Input Voltage Range PD(Watt H/S) 270 W Derating 2.17 W/°C Operating junction temperature Tj +160 °C Operating Ambient Temperature TA −25 to +85 °C TSTG −55 to +150 °C Total Power Dissipation Storage Temperature range Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=8.5mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C 2 FS6S1565RB Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Symbol Min. Typ. Max. Unit VGS = 0V, ID = 250µA 650 - - V VDS = 650V, VGS = 0V - - 200 µA IDSS VDS = 520V VGS = 0V, TC = 125°C - - 300 µA BVDSS Condition RDS(ON) VGS = 10V, ID = 7.5A - 0.5 0.65 Ω Forward transconductance (note) gfs VDS = 50V, ID = 7.5A - - - S Input capacitance Ciss - 2580 - - 270 - - 50 - Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz VDD = 325V, ID = 15A (MOSFET switching time are essentially independent of operating temperature) Total gate charge (gate-source+gate-drain) Qg Gate source charge Qgs Gate drain (Miller) charge Qgd VGS = 10V, ID = 15A, VDS = 520V (MOSFET Switching time are Essentially independent of Operating temperature) Single Pulsed Avalanche current (1) IAS VCC = VFB = VSS = GND - 50 - - 155 - - 270 - - 125 - - 90 - - 15 - - 45 - - 37 - pF nS nC A Note: Pulse test : Pulse width ≤ 300µS, duty 2% 1 S = ---R 1. L=13uH, starting Tj=25°C 3 FS6S1565RB Electrical Characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start threshold voltage VSTART VFB = GND 14 15 16 V Stop threshold voltage VSTOP VFB = GND 8 9 10 V Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta = 25°C 3500 - - V Drain to Source Breakdown voltage BVdss Vdrain = 650V, Ta = 25°C 650 - - V Idss Vdrain = 650V, Ta = 25°C - - 300 uA Initial Frequency FOSC - 22 25 28 kHz Voltage Stability FSTABLE 12V ≤ Vcc ≤ 23V 0 1 3 % -25°C ≤ Ta ≤ 85°C 0 ±5 ±10 % SENSEFET SECTION Drain to Source Leakage current OSCILLATOR SECTION Temperature Stability (note4) ∆FOSC Maximum duty cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback source current IFB VFB = GND 0.7 0.9 1.1 mA Shutdown Feedback voltage VSD Vfb ≥ 6.9V 6.9 7.5 8.1 V Idelay VFB = 5V 1.6 2.0 2.4 µA Over Voltage Protection VOVP Vsync ≥ 11V 27 30 33 V Over Current Latch Voltage (Note2) VOCL - 0.9 1.0 1.1 V TSD - 140 160 - °C Shutdown delay current PROTECTION SECTION Thermal Shutdown Temp.(Note4) 4 FS6S1565RB Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sync & SOFTSTART SECTION Softstart Vortage VSS Vfb = 2 4.7 ISS Vss = V 5.0 5.3 V 0.8 1.0 1.2 mA Sync High Threshold Voltage VSYNCH Vcc = 16V, Vfb = 5V - 7.2 - V Sync Low Threshold Voltage VSYNCL Vcc = 16V, Vfb = 5V - 5.8 - V Burst mode Low Threshold Voltage VBURL Vfb = 0V 10.4 11.0 11.6 V Burst mode High Threshold Voltage VBURH Vfb = 0V 11.4 12.0 12.6 V VBEN Vcc = 10.5V 0.7 1.0 1.3 V IBU_PK Vcc = 10.5V 0.6 0.85 1.1 V Vcc = 10.5V, Vfb = 0V 40 50 60 KHz 8.5 9.7 10.9 A - 0.1 0.17 mA - 10 15 mA Softstart Current BURST MODE SECTION Burst mode Enable Feedback Voltage (Note4) Burst mode Peak Current Limit (Note3) Burst mode Frequency FBUR CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note3) IOVER - TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) ISTART Vfb = GND, VCC = 14V IOP Vfb = GND, VCC = 16V IOP(MIN) Vfb = GND, VCC = 10V IOP(MAX) Vfb = GND, VCC = 28V Notes: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. 5 FS6S1565RB Typical Performance Characteristics Start Up Current vs. Temp 0.150 [mA] 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 Operating Current vs. Temp [mA] 11.0 0 25 50 75 100 125 150 9.0 -25 0 25 Temp Start Threshold Voltage vs. Temp 10.0 9.5 15.0 9.0 14.5 8.5 0 25 50 75 100 125 150 [V] 125 150 8.0 -25 Stop Threshold Voltage vs. Temp 0 25 Temp 50 75 100 125 150 Temp Figure 3. Start Threshold Voltage vs. Temp [KHz] 100 Figure 2. Operating Current vs. Temp 15.5 14.0 -25 75 Temp Figure 1. Start Up Current vs. Temp 16.0 [V] 50 Figure 4. Stop Threshold Voltage vs. Temp Initial Freqency vs. Temp 96.0 28 Maximum Duty vs. Temp [%] 27 95.5 26 95.0 25 24 94.5 23 22 -25 0 25 50 75 100 125 Temp Figure 5. Initial Freqency vs. Temp 6 150 94.0 -25 0 25 50 75 100 125 Temp Figure 6. Maximum Duty vs. Temp 150 FS6S1565RB Typical Performance Characteristics (Continued) 0.45 [V] Feedback Offset Voltage vs. Temp 1.1 0.40 [mA] Feedback Source Current vs. Temp 1.0 0.35 0.9 0.30 0.8 0.25 0.20 -25 0 25 50 75 100 125 150 0.7 -25 0 25 Temp [uA] ShutDown Delay Current vs. Temp 2.0 7.50 1.8 7.45 25 50 75 100 125 150 7.40 -25 0 25 Figure 9. ShutDown Delay Current vs. Temp 75 100 125 150 [V] OverVoltage Protection vs. Temp 31.0 5.01 30.5 5.00 30.0 4.99 29.5 4.98 -25 50 Figure 10. ShutDown Feedback Voltage vs. Temp Softstart Voltage vs. Temp [V] 150 Temp Temp 5.02 125 [V] ShutDown Feedback Voltage vs. Temp 7.60 7.55 0 100 Figure 8. Feedback Source Current vs. Temp 2.2 1.6 -25 75 Temp Figure 7. Feedback Offset Voltage vs. Temp 2.4 50 0 25 50 75 100 125 Temp Figure 11. Softstart Voltage vs. Temp 150 29.0 -25 0 25 50 75 100 125 150 Temp Figure 12. OverVoltage Protection vs. Temp 7 FS6S1565RB Typical Performance Characteristics (Continued) [V] Burst Mode Low Voltage vs. Temp [V] 11.2 12.2 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 Burst Mode High Voltage vs. Temp 0 25 Temp 75 100 125 150 Temp Figure 13. Burst Mode Low Voltage vs. Temp Burst Mode Freqency vs. Temp [KHz] 50 54 Figure 14. Burst Mode High Voltage vs. Temp 1.3 [V] Burst ModeEnable Voltage vs. Temp 1.2 52 1.1 1.0 50 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 0.7 -25 0 25 Figure 15. Burst Mode Freqency vs. Temp 5.02 Softstart Voltage vs. Temp [V] 30.0 4.99 29.5 50 75 100 125 Temp Figure 17. Softstart Voltage vs. Temp 8 [V] 5.00 25 100 125 150 OverVoltage Protection vs. Temp 31.0 30.5 0 75 Figure 16. Burst ModeEnable Voltage vs. Temp 5.01 4.98 -25 50 Temp Temp 150 29.0 -25 0 25 50 75 100 125 150 Temp Figure 18. OverVoltage Protection vs. Temp FS6S1565RB Typical Performance Characteristics (Continued) [V] Burst Mode Low Voltage vs. Temp [V] 11.2 12.2 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 Burst Mode High Voltage vs. Temp 0 25 Figure 19. Burst Mode Low Voltage vs. Temp 75 100 125 150 Figure 20. Burst Mode High Voltage vs. Temp Burst Mode Freqency vs. Temp [KHz] 50 Temp Temp 54 1.3 [V] Burst ModeEnable Voltage vs. Temp 1.2 52 1.1 50 1.0 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 0.7 -25 0 25 Temp 50 75 100 125 150 Temp Figure 21. Burst Mode Freqency vs. Temp [A] Burst Mode Peak Current vs. Temp 1.00 Figure 22. Burst ModeEnable Voltage vs. Temp Over Current Limit vs. Temp [A] 10.0 0.95 9.8 0.90 9.6 0.85 0.80 -25 0 25 50 75 100 125 150 Temp Figure 23. Burst Mode Peak Current vs. Temp 9.4 -25 0 25 50 75 100 125 150 Temp Figure 24. Over Current Limit vs. Temp 9 FS6S1565RB Package Dimensions TO-3P-5L 10 FS6S1565RB Package Dimensions TO-3P-5L (Forming) 11 FS6S1565RB Ordering Information Product Number FS6S1565RB-TU FS6S1565RB-YDTU Package TO-3P-5L TO-3P-5L(Forming) Marking Code BVdss Rds(on) 6S1565RB 650V 0.5 TU : Non Forming Type YDTU : Forming Type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 10/17/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation