APM2701CG Dual Enhancement Mode MOSFET (N and P-Channel) Pin Description Features • Top View N-Channel 20V/3A, • G1 1 6 D1 RDS(ON)=50mΩ(typ.) @ VGS=4.5V S2 2 5 S1 RDS(ON)=90mΩ(typ.) @ VGS=2.5V G2 3 4 D2 P-Channel -20V/-1.5A, JSOT-6 Top View of JSOT-6 RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • (6)D1 Reliable and Rugged Lead Free Available (RoHS Compliant) (1)G1 Applications • (2)S2 Super High Dense Cell Design (3)G2 Power Management in Notebook Computer, Portable Equipment and Battery Powered (5)S1 Systems N-Channel MOSFET (4)D2 P-Channel MOSFET Ordering and Marking Information Package Code CG : JSOT-6 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2701 Lead Free Code Handling Code Temp. Range Package Code APM2701CG : M71X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2701CG Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±10 ±10 3 -1.5 10 -6 1 -1 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* VGS=±4.5V Unit V A A 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2701CG Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA N-Ch 20 VGS=0V, IDS=-250µA P-Ch -20 VDS=16V, VGS=0V Zero Gate Voltage Drain Current IDSS TJ=85°C VDS=-16V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 V 1 N-Ch 30 -1 P-Ch -30 VDS=VGS, IDS=250µA N-Ch 0.45 0.6 1 VDS=VGS, IDS=-250µA P-Ch -0.45 -0.6 -1 VGS=±10V, VDS=0V N-Ch ±100 P-Ch ±100 VGS=4.5V, IDS=3A N-Ch 50 70 VGS=-4.5V, IDS=-1.5A P-Ch 145 190 VGS=2.5V, IDS=1.7A N-Ch 90 110 VGS=-2.5V, IDS=-1A P-Ch 180 235 2 µA V nA mΩ www.anpec.com.tw APM2701CG Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM2701CG Test Condition Min. Typ. Max. Unit Static Characteristics (Cont.) VSD a Diode Forward Voltage Dynamic Characteristics Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf Turn-off Delay Time Turn-off Fall Time Gate Charge Characteristics 0.7 1.3 ISD=-0.5A, V GS =0V P-Ch -0.7 -1.3 N-Channel VGS =0V, VDS =10V, Frequency=1.0MHz N-Ch 270 P-Ch 300 N-Ch 70 P-Channel VGS =0V, VDS =-10V, Frequency=1.0MHz P-Ch 50 N-Ch 50 P-Ch 30 N-Ch 6 12 P-Ch 6 10 N-Ch 5 10 P-Ch 8 12 N-Ch 12 23 P-Ch 10 15 N-Ch 6 12 P-Ch 5 10 N-Ch 5 6.5 P-Ch 4 6 N-Ch 0.5 P-Ch 0.6 N-Ch 1.6 P-Ch 1 V N-Channel VDD=10V, R L=10Ω, IDS=1A, VGEN =4.5V, R G=6Ω P-Channel VDD=-10V, R L=10Ω, IDS=-1A, VGEN =-4.5V, R G=6Ω pF ns b Qg Total Gate Charge Q gs Gate-Source Charge Q gd N-Ch b C iss td(OFF) ISD=0.5A, V GS=0V Gate-Drain Charge N-Channel VDS =10V, VGS =4.5V, IDS=3A P-Channel VDS =-10V, V GS=-4.5V, IDS=-1.5A nC Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2701CG Typical Characteristics N-Channel Drain Current Power Dissipation 3.5 1.0 3.0 ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 2.5 2.0 1.5 1.0 0.2 0.5 0.0 0 20 40 60 0.0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 50 10 0 it im )L n s(o Rd 300µs 1 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Single Pulse 0.01 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 1E-3 Mounted on 1in pad o RθJA : 150 C/W 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 0.14 12 VGS= 3,4,5,6,7,8,9,10V 2.5V VGS=2.5V 0.12 RDS(ON) - On - Resistance (Ω) ID - Drain Current (A) 10 8 6 2V 4 2 0.10 0.08 0.06 VGS=4.5V 0.04 0.02 1.5V 0 0 1 2 3 4 0.00 5 6 8 Transfer Characteristics Gate Threshold Voltage 1.6 Normalized Threshold Voltage 9 8 ID - Drain Current (A) 4 ID - Drain Current (A) 1.8 7 6 5 4 o 2 2 VDS - Drain - Source Voltage (V) 10 3 0 Tj=125 C o Tj=25 C o Tj=-55 C IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 1 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 -50 -25 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 10 2.0 VGS = 4.5V IDS = 3A 1.6 o Tj=150 C 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 0.2 o RON@Tj=25 C: 50mΩ 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 500 Frequency=1MHz VGS - Gate - source Voltage (V) VDS= 10V C - Capacitance (pF) 400 300 Ciss 200 100 Coss Crss 0 0 4 8 12 16 3 2 1 0 20 0 1 2 3 4 5 6 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 IDS = 3A 4 6 www.anpec.com.tw APM2701CG Typical Characteristics P-Channel Drain Current Power Dissipation 1.8 1.0 1.5 -ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 0.2 0.6 0.0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 it Lim n) o ( s Rd 300µs 1 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.1 0 Tj - Junction Temperature (°C) 50 -ID - Drain Current (A) 0.9 0.3 Normalized Transient Thermal Resistance 0.0 1.2 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Single Pulse 0.01 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 1E-3 0.01 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 0.30 6 VGS= -3,-4,-5,-6,-7,-8,-9,-10V RDS(ON) - On - Resistance (Ω) 5 -ID - Drain Current (A) -2V 4 3 2 1 0 0.25 0.20 VGS= -2.5V 0.15 VGS= -4.5V 0.10 0.05 0.00 0 1 2 3 4 5 0 1 2 3 4 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.8 6 Tj=25 C 1.6 Normalized Threshold Voltage 5 o Tj=-55 C 4 6 IDS = -250µA o -ID - Drain Current (A) 5 o Tj=125 C 3 2 1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.0 -50 -25 3.2 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 6 1.8 VGS = -4.5V IDS = -1.5A o 1.4 Tj=150 C -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 1 o Tj=25 C 0.2 o RON@Tj=25 C: 145mΩ 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 500 5 Frequency=1MHz -VGS - Gate - source Voltage (V) VDS= -10V 400 C - Capacitance (pF) 0.2 Ciss 300 200 100 Coss IDS= -1.5A 4 3 2 1 Crss 0 0 0 4 8 12 16 20 1 2 3 4 5 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 9 www.anpec.com.tw APM2701CG Packaging Information JSOT-6 b C Θ L e E E1 E2 Θ1 e A1 A2 A D Dim A A1 A2 b c D E E1 E2 e L ? ?1 Millimeters Min. Max. 0.935 1.10 0.01 0.10 0.925 1.00 0.25 0.40 0.10 0.20 2.95 3.10 2.50 3.00 2.30 2.50 2.65 3.05 0.95 BSC 0.30 0.60 0 8° 7° N0M. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 Inches Min. Max. 0.037 0.043 0.0004 0.004 0.036 0.039 0.010 0.016 0.004 0.008 0.116 0.122 0.098 0.118 0.091 0.098 0.104 0.120 0.037 BSC 0.012 0.024 0 8° 7° N0M. www.anpec.com.tw APM2701CG Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw APM2701CG Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 D1 12 Ko www.anpec.com.tw APM2701CG Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 178±1 SOT-23-6 B C J 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 F D 3.5 ± 0.05 1.5 +0.1 D1 Po 1.5 +0.1 4.0 ± 0.1 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 (mm) Cover Tape Dimensions Application SOT-23-6 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 13 www.anpec.com.tw