PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. MO-036AB Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Pre-Irradiation Absolute Maximum Ratings (Per Die) Parameter N-Channel P-Channel Units 0.68 0.4 -0.68 -0.4 A Pulsed Drain Current ➀ 2.72➀ -2.72➄ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range 14 0.011 ±20 64➁ — — 20➂ 14 0.011 ±20 110➅ — — 27⑦ ID @ VGS =± 10V, TC = 25°C Continuous Drain Current ID @ VGS =± 10V, TC = 100°C Continuous Drain Current IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Lead Temperature Weight W W/°C V mJ A mJ V/ns -55 to 150 o 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 04/17/02 IRFG5210 Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Min BVDSS Drain-to-Source Breakdown Voltage 200 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage 2.0 g fs Forward Transconductance 0.54 IDSS Zero Gate Voltage Drain Current — — Typ Max Units — V 0.27 — — — — — — — — 1.6 1.83 4.0 — 25 250 V/°C IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 10 100 -100 9.5 1.4 4.3 8.7 2.4 19 24 — C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 140 56 14 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA Ω V S( ) Ω Parameter µA nA nC VGS = 10V, ID = 0.4A ➃ VGS = 10V, ID = 0.68A VDS = VGS, ID = 0.25mA VDS > 15V, IDS = 0.4A ➃ VDS= 160V, VGS= 0V VDS = 160V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 0.68A, VDS = 100V ns VDD = 100V, ID = 0.68A, VGS =10V, RG = 7.5Ω from drain lead (6mm/ . nH Measured 0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 0.63 2.5 1.5 110 310 Test Conditions A V nS nC Tj = 25°C, IS = 0.68A, VGS = 0V ➃ Tj = 25°C, IF = 0.68A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 17 90 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFG5210 Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units — — V -0.22 — V/°C — — — — — — 1.6 1.83 -4.0 — -25 -250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 10 -100 100 18 2.8 8.4 15 11 36 43 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 320 110 20 — — — V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 0.64 IDSS Zero Gate Voltage Drain Current — — µA nA nC Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -0.4A ➃ VGS = -10V, ID =- 0.68A VDS = VGS, ID = -0.25mA VDS > -15V, IDS = -0.4A ➃ VDS= -160V, VGS= 0V VDS = -160V, VGS = 0V, TJ =125°C VGS = - 20V VGS = 20V VGS = -10V, ID = -0.68A, VDS = -100V VDD = -100V, ID = -0.68A, VGS = -10V, RG = 7.5Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.61 -2.4 -4.8 120 420 Test Conditions A V nS nC Tj = 25°C, IS = -0.68A, VGS = 0V ➃ Tj = 25°C, IF = -0.68A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 17 90 °C/W Test Conditions Typical socket mount For footnotes refer to the last page www.irf.com 3 IRFG5210 N-Channel Q1,Q3 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1 4.5V 0.1 0.1 20µs PULSE WIDTH T = 25 C 4.5V 10 100 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 7 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1 4 10 100 Fig 2. Typical Output Characteristics TJ = 150 ° C 6 1 VDS , Drain-to-Source Voltage (V) 10 5 ° J 0.1 0.1 Fig 1. Typical Output Characteristics 0.1 20µs PULSE WIDTH T = 150 C ° J 1 1 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 2.5 ID = 0.68A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRFG5210 N-Channel Q1,Q3 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 240 180 Ciss C oss 120 60 C rss 20 VGS , Gate-to-Source Voltage (V) 300 ID = 0.68A V DS= 160V V DS= 100V V DS= 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 16 13a & b 0 0 1 10 0 100 4 6 8 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 2 TJ = 150 ° C 1 TJ = 25 ° C V GS = 0 V 0.1 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.2 100us 1 1ms 10ms TC = 25 ° C TJ = 150 °C Single Pulse 0.1 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRFG5210 N-Channel Q1,Q3 RD 0.7 V DS I D , Drain Current (A) 0.6 VGS D.U.T. RG 0.5 + -V DD VGS 0.4 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.3 Fig 10a. Switching Time Test Circuit 0.2 VDS 0.1 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 0.1 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRFG5210 N-Channel Q1,Q3 15V D R IV E R L VDS D .U .T. RG IA S 20V VGS tp + V - DD 0 .01 Ω Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 150 ID 0.30A 0.43A BOTTOM 0.68A TOP 120 90 60 30 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10V 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRFG5210 P-Channel Q2,Q4 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V -I D , Drain-to-Source Current (A) TOP 1 -4.5V 20µs PULSE WIDTH T = 150 C ° J 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 ° C TJ = 150 ° C 1 V DS = -50V 20µs PULSE WIDTH 0.1 4 5 6 7 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 8 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 3.0 ID = -0.68A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRFG5210 P-Channel Q2,Q4 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 500 400 Ciss 300 Coss 200 100 Crss 20 -VGS , Gate-to-Source Voltage (V) 600 10 VDS =-160V VDS =-100V VDS =-40V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 4 8 12 16 20 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY R DS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 16 0 1 ID = -0.68A TJ = 150 ° C 1 TJ = 25 ° C 100us 1 1ms V GS = 0 V 0.1 1.0 2.0 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 4.0 0.1 10ms TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 9 IRFG5210 P-Channel Q2,Q4 RD 0.7 V DS -ID , Drain Current (A) 0.6 VGS D.U.T. RG 0.5 + 0.4 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.3 Fig 10a. Switching Time Test Circuit 0.2 td(on) 0.1 tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 0.1 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 10 www.irf.com IRFG5210 P-Channel Q2,Q4 L D .U .T. RG IA S -20V VGS tp 300 VD D A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -0.30A -0.43A BOTTOM -0.68A TOP 240 180 120 60 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -10V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 11 IRFG5210 Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 276mH, Peak IL = 0.68A, VGS = 10V ➂ ISD ≤ 0.68A, di/dt ≤ 290A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Repetitive Rating; Pulse width limited by maximum junction temperature. ➅VDD = - 50V, starting TJ = 25°C, L= 475mH, Peak IL = - 0.68A, VGS = -10V ⑦ ISD ≤ - 0.68A, di/dt ≤ - 290A/µs, VDD ≤ -200V, TJ ≤ 150°C Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 12 www.irf.com