ONSEMI NTB85N03T4

NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
•
•
•
•
85 AMPERES
28 VOLTS
RDS(on) = 6.1 m (Typ.)
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
28
Vdc
Gate−to−Source Voltage
− Continuous
VGS
20
ID
85*
190
Adc
Apk
PD
80
0.66
W
W/°C
TJ, Tstg
−55
to
+150
°C
EAS
733
mJ
Drain Current
− Continuous @ TC = 25°C
− Single Pulse (tp = 10 s)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH,
IL(pk) = 17 A, RG = 25 )
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Vdc
IDM
G
4
S
4
1
2
3
1
D2PAK
CASE 418AA
Style 2
TO−220AB
CASE 221A
Style 5
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
°C/W
RJC
RJA
1.55
70
TL
260
4
Drain
°C
NTx85N03
LLYWW
NTx85N03
LLYWW
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
*Chip current capability limited by package.
1
Gate
3
Source
2
Drain
1
Gate
NTx85N03
x
LL
Y
WW
2
Drain
3
Source
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 1
1
Package
Shipping
NTP85N03
TO−220AB
50 Units/Rail
NTB85N03
D2PAK
50 Units/Rail
NTB85N03T4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP85N03/D
NTP85N03, NTB85N03
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
28
−
30.6
25
−
−
−
−
−
−
1.0
10
−
−
±100
1.0
−
1.9
−3.8
3.0
−
−
−
−
6.1
9.2
7.0
6.8
−
−
gFS
−
20
−
mhos
pF
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
(VDS = 28 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 10 Vdc, ID = 40 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
Forward Transconductance (Note 2) (VDS = 15 Vdc, ID = 10 Adc)
Vdc
mV/°C
m
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
Ciss
−
2150
−
Coss
−
680
−
Crss
−
260
−
td(on)
−
10
−
tr
−
22
−
td(off)
−
32
−
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 15 Adc,
VGS = 10 Vdc, RG = 3.3 )
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = 24 Vdc, ID = 40 Adc,
VGS = 4.5 Vdc) (Note 2)
ns
tf
−
30
−
QT
−
29
−
Q1
−
8.0
−
Q2
−
18
−
VSD
−
−
−
0.75
1.2
0.65
1.0
−
−
Vdc
trr
−
39
−
ns
ta
−
21
−
tb
−
18
−
QRR
−
0.043
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 40 Adc, VGS = 0 Vdc) (Note 2)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
C
NTP85N03, NTB85N03
80
50
TJ = 25°C
VGS = 10 V
8V
40
6V
3.6 V
30
5V
4.5 V
20
3.4 V
4V
10
3.2 V
3V
2.8 V
VDS ≥ 10 V
70
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
3.8 V
60
50
40
TJ = 25°C
30
TJ = 100°C
20
10
TJ = −55°C
0
0
0
4
1
2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
2
4
5
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.07
ID = 10 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.015
TJ = 25°C
0.01
VGS = 4.5 V
0.005
0
VGS = 10 V
5
10
15
20
30
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
0.01
VGS = 0 V
ID = 40 A
VDS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
6
0.0075
0.005
TJ = 125°C
100
TJ = 100°C
10
0.0025
0
−50
1
−25
0
25
50
75
100
125
150
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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20
NTP85N03, NTB85N03
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
5000
VGS = 0
TJ = 25°C
C, CAPACITANCE (pF)
4500
4000
3500
3000
2500
Ciss
2000
1500
1000
Coss
500
Crss
0
−15
−10
−5
0
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
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36
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
QT
10
30
VDS
24
8
VGS
18
6
Qgs
Qgd
12
4
ID = 15
TJ = 25°C
2
0
0
5
10
15
20
6
0
30
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
NTP85N03, NTB85N03
1000
VDD = 24 V
ID = 20 A
VGS = 10 V
td(off)
tf
tr
100
td(on)
10
1
1
10
100
RG, GATE RESISTANCE ()
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
IS, SOURCE CURRENT (AMPS)
15
VGS = 0 V
TJ = 25°C
12
9
6
3
0
0.1
0.3
0.5
0.7
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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NTP85N03, NTB85N03
INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.33
8.38
0.08
2.032
0.42
10.66
0.24
6.096
0.04
1.016
0.12
3.05
0.63
17.02
inches
mm
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NTP85N03, NTB85N03
SOLDER STENCIL GUIDELINES
pattern of the opening in the stencil for the drain pad is not
critical as long as it allows approximately 50% of the pad to
be covered with paste.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC−59, SC−70/SOT−323, SOD−123, SOT−23, SOT−143,
SOT−223, SO−8, SO−14, SO−16, and SMB/SMC diode
packages, the stencil opening should be the same as the pad
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If one uses a 1:1 opening to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening
for the leads is still a 1:1 registration. Figure 11 shows a
typical stencil for the DPAK and D2PAK packages. The
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ ÇÇ
ÇÇÇ
ÇÇÇ ÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
SOLDER PASTE
OPENINGS
STENCIL
Figure 11. Typical Stencil for DPAK and
D2PAK Packages
SOLDERING PRECAUTIONS
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
* * Due to shadowing and the inability to set the wave
height to incorporate other surface mount components, the
D2PAK is not recommended for wave soldering.
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NTP85N03, NTB85N03
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177−189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joint.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 12 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 12. Typical Solder Heating Profile
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NTP85N03, NTB85N03
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
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9
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
NTP85N03, NTB85N03
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
J
K
M
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
0.310
−−−
0.100 BSC
0.018 0.025
0.090
0.110
0.280
−−−
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1.
2.
3.
4.
M
VARIABLE
CONFIGURATION
ZONE
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.92
1.14
1.40
7.87
−−−
2.54 BSC
0.46
0.64
2.29
2.79
7.11
−−−
14.60 15.88
1.14
1.40
GATE
DRAIN
SOURCE
DRAIN
U
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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For additional information, please contact your
local Sales Representative.
NTP85N03/D
NTP85N03, NTB85N03
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NTP85N03, NTB85N03
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