Preliminary Technical Information IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 X2-Class Power MOSFET VDSS ID25 = 650V = 12A 300m RDS(on) N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 180 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220AB (IXTP) G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 4.5 V 100 nA TJ = 125C 5 A 50 A Applications 300 m © 2016 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100670A(01/16) IXTA12N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6.6 RGi Gate Input Resistance Ciss Coss 11.0 S 4 1100 pF 830 pF 1.5 pF 53 190 pF pF 23 ns 24 ns 52 ns 16 ns 17.7 nC 5.5 nC 5.5 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXTP12N65X2 IXTH12N65X2 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 6A, -di/dt = 100A/μs 270 2.5 18.5 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 28 12 VGS = 10V 7V VGS = 10V 8V 24 10 7V 6V 20 I D - Amperes I D - Amperes 8 6 16 6V 12 4 8 5V 2 4 5V 4V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 4.0 12 VGS = 10V 7V VGS = 10V 3.5 10 3.0 RDS(on) - Normalized 6V I D - Amperes 8 6 5V 4 I D = 12A 2.5 2.0 I D = 6A 1.5 1.0 2 0.5 4V 0 0.0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.2 4.0 VGS = 10V 3.5 1.1 BV DSS / V GS(th) - Normalized R DS(on) - Normalized TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.5 0 4 8 12 16 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 20 24 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA12N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature IXTP12N65X2 IXTH12N65X2 Fig. 8. Input Admittance 18 14 16 12 14 10 I D - Amperes I D - Amperes 12 8 6 TJ = 125ºC 25ºC - 40ºC 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 20 40 TJ = - 40ºC 18 35 16 30 g f s - Siemens I S - Amperes 25ºC 14 12 125ºC 10 8 25 20 TJ = 125ºC 15 6 TJ = 25ºC 10 4 5 2 0 0 0 2 4 6 8 10 12 14 16 18 0.4 20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 325V I D = 6A Ciss Capacitance - PicoFarads 8 V GS - Volts I G = 10mA 6 4 1000 100 Coss 10 2 f = 1 MHz C rss 1 0 0 2 4 6 8 10 12 14 16 18 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTA12N65X2 Fig. 13. Output Capacitance Stored Energy IXTP12N65X2 IXTH12N65X2 Fig. 14. Forward-Bias Safe Operating Area 100 11 RDS(on) Limit 10 9 25µs 10 100µs 7 I D - Amperes E OSS - MicroJoules 8 6 5 1 4 1ms 3 0.1 TJ = 150ºC 2 10ms TC = 25ºC Single Pulse 1 0.01 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N65X2 (X3-S602) 1-06-16 IXTA12N65X2 TO-263 Outline IXTP12N65X2 IXTH12N65X2 TO-247 Outline TO-220 Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C 1 = Gate 2 = Drain 3 = Source 4 = Drain E1 L A1 C b b2 b4 e Pins: 1 - Gate 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain 1 - Gate 2,4 - Drain 3 - Source