HMC137 v03.0304 Typical Applications Features The HMC137 is suitable for: Chip Integrates Directly into MIC Designs • Wireless Local Loop Carrier Suppression: 20 dB • LMDS & VSAT Direct Modulation in the 6 - 11 GHz Band • Point-to-Point Radios Functions also as a Phase Detector • Test Equipment Functional Diagram 5 MODULATORS - BI-PHASE - CHIP GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Die Size: 1.45 x 1.30 x 0.1 mm General Description The HMC137 Bi-Phase Modulator is designed to phase-modulate an RF signal into reference and 180 degree states. Device input is at the RF port and output is at the LO port. The polarity of the bias current at the control port (IF port) defines the phase states. Excellent amplitude and phase balance provided by closely matched monolithic balun and diode circuits delivers 20 dB of carrier suppression in a tiny monolithic chip. The device also functions as a demodulator or phase comparator. As a demodulator, data emerges at the control port when a modulated signal at the RF port is compared to a reference signal at the LO port. As a phase comparator, the phase angle between two signals applied to the RF and LO ports is represented by an analog voltage at the control port. Except for carrier suppression, the data presented here was measured under static conditions in which a DC bias current (nominally 5 mA) is applied to the control port. Electrical Specifi cations, TA = +25° C, 5 mA Bias Current Parameter Min. Frequency Band Insertion Loss 9 Return Loss, RF and LO Ports 2.5 Amplitude Balance Phase Balance Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p) 5 - 14 Typ. Max. 6 - 11 15 Units GHz 11 dB 0.25 0.50 dB 10 15 3.0 dB 20 deg dBc Input Power for 1 dB Compression 4 8 dBm Third Order Intercept, Input 10 15 dBm Second Order Intercept, Input 25 40 dBm Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V at the control port). 2 5 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC137 v03.1007 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Insertion Loss Amplitude Balance 2 AMPLITUDE BALANCE (dB) 0 -10 -15 -20 1 0 -1 -2 4 5 6 7 8 9 10 11 12 4 5 6 FREQUENCY (GHz) Phase Balance 8 9 10 11 12 Carrier Suppression * 15 CARRIER SUPPRESSION (dBc) 50 10 PHASE BALANCE (Deg) 7 5 0 -5 -10 -15 4 5 6 7 8 9 10 11 40 30 20 10 0 12 6 7 8 9 10 FREQUENCY (GHz) CARRIER FREQUENCY (GHz) Return Loss 0 RETURN LOSS (dB) 5 FREQUENCY (GHz) -5 11 12 MODULATORS - BI-PHASE - CHIP INSERTION LOSS (dB) -5 -10 -15 -20 2 3 4 5 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) * (For 1.4 Vp-p Square Wave Modulation at 1 MHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 15 HMC137 v03.1007 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Compression vs Bias at 9 GHz 12 14 10 12 8 10 P1dB (dBm) P1dB (dBm) Compression vs Frequency * 6 8 6 4 4 2 5 2 0 0 6 7 8 9 10 11 0 12 1 2 Third Order Intercept vs Frequency * 5 6 7 8 9 10 Third Order Intercept vs Bias at 9 GHz 25 25 20 20 IP3 (dBm) IP3 (dBm) MODULATORS - BI-PHASE - CHIP 4 BIAS CURRENT (mA) FREQUENCY (GHz) 15 10 15 10 5 5 0 0 6 7 8 9 10 11 CARRIER FREQUENCY (GHz) 12 0 1 2 3 4 5 6 7 8 BIAS CURRENT (mA) * (For 5 mA Bias Current) Suggested TTL Driver for a Bi-Phase Modulator +2.5 Vdc +5 Vdc MODULATOR I, Q PORTS .01 uF VCC VCC HC04 HCT04 *R 1 VA 0.6V TTL V Z = 2V GND GND 2.2K -2.5 Vdc Notes 1. VA Alternates Between + 2.4 Vdc ± IA = 2.4 - 0.6 = ± 5 mA 360 Ohm 5 - 16 3 IA .01 uF HITTITE MODULATOR 2. HCT04 and HC04 are QMOS HEX Inverters. *R1 =300 to 620 ± 2% Select R1 To Supply ±3 to ±6 mA to the IF Port. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 10 HMC137 v03.1007 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. BOND PAD SPACING IS .006” CENTER TO CENTER. 4. BACKSIDE METALIZATION: GOLD. MODULATORS - BI-PHASE - CHIP 5 5. BACKSIDE METAL IS GROUND. 6. BOND PAD METALIZATION: GOLD. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 17 HMC137 v03.1007 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Pad Descriptions Pad Number Function Description 1 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC this pin must not source or sink more than 2mA of current or die non-function and possible die failure will result. 2 RF DC coupled and matched to 50 Ohms. 3 LO DC coupled and matched to 50 Ohms. Interface Schematic MODULATORS - BI-PHASE - CHIP 5 5 - 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC137 v03.1007 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 5 MODULATORS - BI-PHASE - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 19