TGS DTA144TSA Digital transistors (built-in resistors) Datasheet

TIGER ELECTRONIC CO.,LTD
Digital transistors (built-in resistors)
DTA144TE/ DTA144TUA
DTA144TCA/DTA144TKA/DTA144TSA
DIGITAL TRANSISTOR (PNP)
FEATURES
1) Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete isolation
to allow positive biasing of the input. They also have the advantage of
almost completely eliminating parasitic effects
3) Only the on/off conditions need to be set for operation, making device
design easy
PIN CONNENCTIONS AND MARKING
DTA144TE
SOT-523
DTA144TUA
(1) Base
IN
(1)(1)
INBase
(2) GND
Emitter
(2)(2)
GND
Emitter
(3) Collector
OUT
(3)(3)
OUT
Collector
SOT-323
Addreviated symbol: 96
DTA144TKA
(1) IN
Addreviated symbol: 96
DTA144TCA
DTA114ECA
(1) IN
(1) Base
(2) GND
(2) Emitter
(3) OUT
(3) Collector
(2) GND
(3) OUT
SOT-23-3L
SOT-23
Addreviated symbol: 96
Addreviated symbol: 96
DTA144TSA
(1) GND
(2) OUT
(3) IN
TO-92S
A,Jun,2011
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Limits(DTA144T□)
Parameter
E
UA
KA
Units
CA
SA
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-100
mA
PC
Collector Dissipation
Tj
Junction temperature
TJ, Tstg
Junction and Storage Temperature
150
200
300
mW
150
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC =-50μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-5V,IC=-1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Imput resistor
R1
conditions
Min
100
Typ
300
IC=-5mA,IB=-0.5mA
Max
600
-0.3
250
VCE=-10V,IE=5mA, f=100MHz
32.9
47
Unit
V
MHz
61.1
KΩ
A,Jun,2011
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