MOTOROLA MPS3563 Amplifier transistor Datasheet

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MPS918/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
MPS918
MPS3563
Unit
Collector – Emitter Voltage
VCEO
15
12
Vdc
Collector – Base Voltage
VCBO
30
30
Vdc
Emitter – Base Voltage
VEBO
3.0
2.0
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
0.85
6.8
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RqJA(1)
357
°C/W
RqJC
147
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
15
12
—
—
30
30
—
—
3.0
2.0
—
—
—
—
10
50
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 3.0 mAdc, IB = 0)
V(BR)CEO
MPS918
MPS3563
Collector – Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
MPS918
MPS3563
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Vdc
V(BR)EBO
MPS918
MPS3563
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
Vdc
ICBO
MPS918
MPS3563
nAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 ms; Duty Cycle
1.0%.
v
v
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
20
20
—
200
VCE(sat)
—
0.4
Vdc
VBE(sat)
—
1.0
Vdc
600
600
—
1500
—
—
—
3.0
1.7
1.7
Cibo
—
2.0
pF
hfe
20
250
—
NF
—
6.0
dB
15
14
—
—
Pout
30
—
mW
η
25
—
%
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
(IC = 8.0 mAdc, VCE = 10 Vdc)
MPS918
MPS3563
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MPS918
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MPS918
hFE
—
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
MPS918
MPS3563
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MPS918
MPS918
MPS3563
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS918
Small–Signal Current Gain
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS3563
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kΩ, f = 60 MHz)
MPS918
fT
MHz
Cobo
pF
FUNCTIONAL TEST
Common–Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz)
(Gfd + Gre
–20 dB)
MPS918
MPS3563
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
MPS918
Oscillator Collector Efficiency
(IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz)
MPS918
t
2. Pulse Test: Pulse Width
2
v 300 ms; Duty Cycle v 1.0%.
Gpe
dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
3
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device
Data
MPS918/D
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