HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 1Gb DDR2 SDRAM HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Dec 2006 1 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Revision Details Rev. History Draft Date 0.1 Initial data sheet released Nov. 2006 0.2 IDD Values added Dec. 2006 Rev. 0.2 /Dec 2006 2 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Contents 1. Description 1.1 Device Features and Ordering Information 1.1.1 Key Φεατυρεσ 1.1.2 Ordering Information 1.1.3 Ordering Frequency 1.2 Pin configuration 1.3 Pin Description 2. Maximum DC ratings 2.1 Absolute Maximum DC Ratings 2.2 Operating Temperature Condition 3. AC & DC Operating Conditions 3.1 DC Operating Conditions 5.1.1 Recommended DC Operating Conditions(SSTL_1.8) 5.1.2 ODT DC Electrical Characteristics 3.2 DC & AC Logic Input Levels 3.2.1 Input DC Logic Level 3.2.2 Input AC Logic Level 3.2.3 AC Input Test Conditions 3.2.4 Differential Input AC Logic Level 3.2.5 Differential AC output parameters 3.3 Output Buffer Levels 3.3.1 Output AC Test Conditions 3.3.2 Output DC Current Drive 3.3.3 OCD default χηαραχτεριστιχσ 3.4 IDD Specifications & Measurement Conditions 3.5 Input/Output Capacitance 4. AC Timing Specifications 5. Package Dimensions Rev. 0.2 / Dec 2006 3 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 1. Description 1.1 Device Features & Ordering Information 1.1.1 Key Features • • • • • • • • • • • • • • • • • • • • • • • • • • VDD = 1.8V +/- 0.1V VDDQ = 1.8V +/- 0.1V All inputs and outputs are compatible with SSTL_18 interface 8 banks Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS) Differential Data Strobe (DQS, DQS) Data outputs on DQS, DQS edges when read (edged DQ) Data inputs on DQS centers when write(centered DQ) On chip DLL align DQ, DQS and DQS transition with CK transition DM mask write data-in at the both rising and falling edges of the data strobe All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 3, 4, 5 and 6 supported Programmable additive latency 0, 1, 2, 3, 4 and 5 supported Programmable burst length 4/8 with both nibble sequential and interleave mode Internal eight bank operations with single pulsed RAS Auto refresh and self refresh supported tRAS lockout supported 8K refresh cycles /64ms JEDEC standard 60ball FBGA(x4/x8) , 84ball FBGA(x16) Full strength driver option controlled by EMRS On Die Termination supported Off Chip Driver Impedance Adjustment supported Read Data Strobe supported (x8 only) Self-Refresh High Temperature Entry Operating Frequency Ordering Information Part No. HY5PS1G431C(L)FP-XX* Configuration Package 256Mx4 HY5PS1G831C(L)FP-XX* 128Mx8 HY5PS1G1631C(L)FP-XX* 64Mx16 Note: 60 Ball 84 Ball Grade tCK(ns) CL tRCD tRP Unit E3 5 3 3 3 Clk C4 3.75 4 4 4 Clk Y5 3 5 5 5 Clk S5 2.5 5 5 5 Clk -XX* is the speed bin, refer to the Operation Frequency table for complete Part No. Rev. 0.2 /Dec 2006 4 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 1.2 Pin Configuration & Address Table 256Mx4 DDR2 Pin Configuration(Top view: see balls through package) 7 8 9 A VSSQ DQS VDDQ DM B DQS VSSQ NC DQ1 VDDQ C VDDQ DQ0 VDDQ NC VSSQ DQ3 D DQ2 VSSQ NC VDDL VREF VSS E VSSDL CK VDD CKE WE F RAS CK ODT BA0 BA1 G CAS CS A10 A1 H A2 A0 A3 A5 J A6 A4 A7 A9 K A11 A8 A12 NC L NC A13 1 2 3 VDD NC VSS NC VSSQ VDDQ BA2 VSS VDD VDD VSS ROW AND COLUMN ADDRESS TABLE Rev. 0.2 /Dec 2006 ITEMS 256Mx4 # of Bank 8 Bank Address BA0,BA1,BA2 Auto Precharge Flag A10/AP Row Address A0 - A13 Column Address A0-A9, A11 Page size 1 KB 5 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 128Mx8 DDR2 PIN CONFIGURATION(Top view: see balls through package) 7 8 9 A VSSQ DQS VDDQ DM/RDQS B DQS VSSQ DQ7 DQ1 VDDQ C VDDQ DQ0 VDDQ DQ4 VSSQ DQ3 D DQ2 VSSQ DQ5 VDDL VREF VSS E VSSDL CK VDD CKE WE F RAS CK ODT BA0 BA1 G CAS CS A10 A1 H A2 A0 A3 A5 J A6 A4 A7 A9 K A11 A8 A12 NC L NC A13 1 2 3 VDD NU/RDQS VSS DQ6 VSSQ VDDQ BA2 VSS VDD VDD VSS ROW AND COLUMN ADDRESS TABLE Rev. 0.2 /Dec 2006 ITEMS 128Mx8 # of Bank 8 Bank Address BA0, BA1, BA2 Auto Precharge Flag A10/AP Row Address A0 - A13 Column Address A0-A9 Page size 1 KB 6 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 64Mx16 DDR2 PIN CONFIGURATION(Top view: see balls through package) 7 8 9 A VSSQ UDQS VDDQ UDM B UDQS VSSQ DQ15 DQ9 VDDQ C VDDQ DQ8 VDDQ DQ12 VSSQ DQ11 D DQ10 VSSQ DQ13 VDD NC VSS E VSSQ LDQS VDDQ DQ6 VSSQ LDM F LDQS VSSQ DQ7 VDDQ DQ1 VDDQ G VDDQ DQ0 VDDQ DQ4 VSSQ DQ3 H DQ2 VSSQ DQ5 VDDL VREF VSS J VSSDL CK VDD CKE WE K RAS CK ODT BA0 BA1 L CAS CS A10/AP A1 M A2 A0 A3 A5 N A6 A4 A7 A9 P A11 A8 A12 NC, A14 R NC, A15 NC, A13 1 2 3 VDD NC VSS DQ14 VSSQ VDDQ NC, BA2 VSS VDD VDD VSS ROW AND COLUMN ADDRESS TABLE Rev. 0.2 /Dec 2006 ITEMS 64Mx16 # of Bank 8 Bank Address BA0, BA1, BA2 Auto Precharge Flag A10/AP Row Address A0 - A12 Column Address A0-A9 Page size 2 KB 7 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP IDD Test Conditions (IDD values are for full operating range of Voltage and Temperature, Notes 1-5) Symbol Conditions Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS min(IDD) ; CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge current ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W mA IDD2P Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); Fast PDN Exit MRS(12) = 0 CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Slow PDN Exit MRS(12) = 1 mA mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W mA IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD6 Self refresh current; CK and CK at 0V; CKE £ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING mA IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed timing conditions mA Rev. 0.2 /Dec 2006 8 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Note: 1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed grade) 2. 3. 4. 5. IDD specifications are tested after the device is properly initialized Input slew rate is specified by AC Parametric Test Condition IDD parameters are specified with ODT disabled. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 6. Definitions for IDD LOW is defined as Vin £ VILAC(max) HIGH is defined as Vin Š VIHAC(min) STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)for DQ signals not including masks or strobes. Rev. 0.2 /Dec 2006 9 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 2. Maximum DC Ratings 2.1 Absolute Maximum DC Ratings Symbol Rating Units Notes Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1 VDDQ Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1 VDDL Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1 Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V 1 -55 to +100 °C 1, 2 -2 uA ~ 2 uA uA -5 uA ~ 5 uA uA VDD VIN, VOUT TSTG II IOZ Parameter Storage Temperature Input leakage current; any input 0V VIN VDD; all other balls not under test = 0V) Output leakage current; 0V VOUT VDDQ; DQ and ODT disabled Note: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the χεντερ/top side of the DRAM. For the measurement conditions. please refer to JESD51-2 standard. 2.2 Operating Temperature Condition Symbol TOPER Parameter Rating Units Notes Operating Temperature 0 to 95 °C 1,2 Note: 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 2. At 85~95° TOPER , Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this temperature range, an EMRS command is required to change ιnternal refresh rate. Rev. 0.2 /Dec 2006 10 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3. AC & DC Operating Conditions 3.1 DC Operating Conditions 3.1.1 Recommended DC Operating Conditions (SSTL_1.8) Symbol Rating Parameter Min. Typ. Max. Units Notes VDD Supply Voltage 1.7 1.8 1.9 V 1 VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 1,2 VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 1,2 VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 3,4 VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 5 Note: 1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option. 2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD. 3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ 4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc). 5. VTT of transmitting device must track VREF of receiving device. 3.1.2 ODT DC electrical characteristics PARAMETER/CONDITION SYMBOL MIN NOM MAX Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 Deviation of VM with respect to VDDQ/2 delta VM -6 UNITS NOTES ohm 1 180 ohm 1 60 ohm 1 +6 % 1 Note : 1. Test condition for Rtt measurements Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I(VIL(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18 VIH (ac) - VIL (ac) Rtt(eff) = I(VIH (ac)) - I(VIL (ac)) Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load. 2 x Vm delta VM = Rev. 0.2 /Dec 2006 VDDQ - 1 x 100% 11 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.2 DC & AC Logic Input Levels 3.2.1 Input DC Logic Level Symbol Parameter Min. Max. Units VIH(dc) dc input logic high VREF + 0.125 VDDQ + 0.3 V VIL(dc) dc input logic low - 0.3 VREF - 0.125 V Notes 3.2.2 Input AC Logic Level Symbol Parameter VIH (ac) VIL (ac) DDR2 400,533 DDR2 667,800 Units Min. Max. Min. Max. ac input logic high VREF + 0.250 - VREF + 0.200 - V ac input logic low - VREF - 0.250 - VREF - 0.200 V Notes 3.2.3 AC Input Test Conditions Symbol Condition Value Units Notes VREF Input reference voltage V 1 VSWING(MAX) Input signal maximum peak to peak swing 0.5 * VDDQ 1.0 V 1 SLEW Input signal minimum slew rate 1.0 V/ns 2, 3 Note: 1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the range from VREF to VIL(ac) max for falling edges as shown in the figure below. 3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to VIL(ac) on the negative transitions. VDDQ VIH(ac) min VIH(dc) min VREF VSWING(MAX) VIL(dc) max delta TF Falling Slew = VREF - VIL(ac) max delta TF delta TR VIL(ac) max VSS Rising Slew = VIH(ac) min - VREF delta TR < Figure : AC Input Test Signal Waveform> Rev. 0.2 /Dec 2006 12 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.2.4 Differential Input AC logic Level Symbol Parameter VID (ac) ac differential input voltage VIX (ac) ac differential cross point voltage Min. Max. Units Notes 0.5 VDDQ + 0.6 V 1 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2 Note: 1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and UDQS. 2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - V IL(DC). VDDQ VTR Crossing point VID VIX or VOX VCP VSSQ < Differential signal levels > Note: 1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC) - V IL(AC). 2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross. 3.2.5 Differential AC output parameters Symbol VOX (ac) Parameter ac differential cross point voltage Min. Max. Units Notes 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1 Note: 1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC) indicates the voltage at ωηιχη differential output signals must cross. Rev. 0.2 /Dec 2006 13 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.3 Output Buffer Characteristics 3.3.1 Output AC Test Conditions Symbol VOTR Parameter Output Timing Measurement Reference Level SSTL_18 Class II Units Notes 0.5 * VDDQ V 1 SSTl_18 Units Notes - 13.4 mA 1, 3, 4 13.4 mA 2, 3, 4 Note: 1. The VDDQ of the device under test is referenced. 3.3.2 Output DC Current Drive Symbol Parameter IOH(dc) Output Minimum Source DC Current IOL(dc) Output Minimum Sink DC Current Note: 1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280 mV. 2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV. 3. The dc value of VREF applied to the receiving device is set to VTT 4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement. Rev. 0.2 /Dec 2006 14 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.3.3 OCD default characteristics Description Parameter Min Output impedance - Output impedance step size for OCD calibration Pull-up and pull-down mismatch Output slew rate Sout Nom Unit Notes - ohms 1 0 1.5 ohms 6 0 4 ohms 1,2,3 5 V/ns 1,4,5,6,7,8 1.5 - Max - Note : 1. Absolute Specifications ( Toper; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V) 2. Impedance measurement condition for output source dc current: VDDQ=1.7V; VOUT=1420mV; (VOUTVDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV. 3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage. 4. Slew rate measured from vil(ac) to vih(ac). 5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. 6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process corners/variations and represents only the DRAM uncertainty. A 0 ohm value(no calibration) can only be achieved if the OCD impedance is 18 ohms +/- 0.75 ohms under nominal conditions. Output Slew rate load: VTT 25 ohms Output (Vout) Reference point 7. DRAM output slew rate specification applies to 400, 533 and 667 MT/s speed bins. 8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification. Rev. 0.2 /Dec 2006 15 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.4 IDD Specifications & Test Conditions IDD Specifications(max) DDR2 533 DDR2 400 Symbol DDR2 667 DDR2 800 Units x4 x8 x4 x8 x16 x4 x8 x16 x4 x8 x16 IDD0 60 60 65 65 85 70 70 90 75 75 95 mA IDD1 70 70 75 75 110 80 80 115 85 85 120 mA IDD2P 8 8 8 8 8 8 8 8 8 8 8 mA IDD2Q 22 22 27 27 27 30 30 30 32 32 32 mA IDD2N 30 30 35 35 35 40 40 40 45 45 45 mA F 20 20 20 20 20 25 25 25 25 25 25 mA S 9 9 9 9 9 9 9 9 9 9 9 mA IDD3N 35 35 45 45 45 50 50 50 55 55 55 mA IDD4W 100 100 125 125 160 150 150 195 170 170 225 mA IDD4R 100 100 125 125 160 150 150 195 170 170 225 mA IDD5 165 165 165 165 165 175 175 175 175 175 175 mA Normal 8 8 8 8 8 8 8 8 8 8 8 mA Low power 5 5 5 5 5 5 5 5 5 5 5 mA 165 165 175 175 260 180 180 265 185 185 270 mA IDD3P IDD6 IDD7 Rev. 0.2 /Dec 2006 16 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP IDD Test Conditions (IDD values are for full operating range of Voltage and Temperature, Notes 1-5) Symbol Conditions Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS min(IDD) ; CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge χυρρεντ ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W mA IDD2P Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 mA Slow PDN Exit MRS(12) = 1 mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W mA IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD6 Self refresh current; CK and CK at 0V; CKE £ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING mA FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes. IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed timing conditions Rev. 0.2 /Dec 2006 mA 17 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Note : 1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed grade) 2. IDD specifications are tested after the device is properly initialized 3. Input slew rate is specified by AC Parametric Test Condition 4. IDD parameters are specified with ODT disabled. 5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 6. Definitions for IDD LOW is defined as Vin £ VILAC(max) HIGH is defined as Vin Š VIHAC(min) STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes. Rev. 0.2 /Dec 2006 18 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP For purposes of IDD testing, the following parameters are to be utilized DDR2-800 DDR2667 DDR2533 DDR2400 Parameter 5-5-5 6-6-6 5-5-5 4-4-4 3-3-3 Units CL(IDD) 5 6 5 4 3 tCK tRCD(IDD) 12.5 15 15 15 15 ns tRC(IDD) 57.5 60 60 60 55 ns tRRD(IDD)-x4/x8 7.5 7.5 7.5 7.5 7.5 ns tRRD(IDD)-x16 10 10 10 10 10 ns tCK(IDD) 2.5 2.5 3 3.75 5 ns tRASmin(IDD) 45 45 45 45 40 ns tRASmax(IDD) 70000 70000 70000 70000 70000 ns tRP(IDD) 12.5 15 15 15 15 ns tRFC(IDD)-256Mb 75 75 75 75 75 ns tRFC(IDD)-512Mb 105 105 105 105 105 ns tRFC(IDD)-1Gb 127.5 127.5 127.5 127.5 127.5 ns tRFC(IDD)-2Gb 197.5 197.5 197.5 197.5 197.5 ns Detailed IDD7 The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification. Legend: A = Active; RA = Read with Autoprecharge; D = Deselect IDD7: Operating Current: All Bank Interleave Read operation All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA Timing Patterns for 4 bank devices x4/ x8/ x16 -DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D -DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D -DDR2-533 5/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D -DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D Timing Patterns for 8 bank devices x4/8 -DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7 -DDR2-533 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D Timing Patterns for 8 bank devices x16 -DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D -DDR2-533 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 D A6 RA6 D A7 RA7 D D D Rev. 0.2 /Dec 2006 19 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 3.5. Input/Output Capacitance Parameter DDR2 400 DDR2 533 Symbol DDR2 667 DDR2 800 Min Max Min Max Units Input capacitance, CK and CK CCK 1.0 2.0 1.0 2.0 pF Input capacitance delta, CK and CK CDCK x 0.25 x 0.25 pF Input capacitance, all other input-only pins CI 1.0 2.0 1.0 2.0 pF Input capacitance delta, all other input-only pins CDI x 0.25 x 0.25 pF Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 4.0 2.5 3.5 pF Input/output capacitance delta, DQ, DM, DQS, DQS CDIO x 0.5 x 0.5 pF 4. Electrical Characteristics & AC Timing Specification (0ϒ ⊃ ϒ ℜ TCASE ϒ ℜ 95ϒ ⊃ ; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V) Refresh Parameters by Device Density Parameter Symbol Refresh to Active/Refresh command time tRFC Average periodic refresh interval tREFI 256Mb 512Mb 1Gb 2Gb 4Gb Units 75 105 127.5 195 327.5 ns 0ϒ ⊃ϒ ℜ TCASE ϒ ℜ 95ϒ ⊃ 7.8 7.8 7.8 7.8 7.8 ns 85ϒ ⊃≤ … TCASE ϒ ℜ 95ϒ ⊃ 3.9 3.9 3.9 3.9 3.9 ns DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin Speed DDR2-800 DDR2-667 DDR2-533 DDR2-400 Units Bin(CL-tRCD-tRP) 5-5-5 6-6-6 4-4-4 5-5-5 4-4-4 3-3-3 Parameter min min min min min min CAS Latency 5 6 4 5 4 3 tCK tRCD 12.5 15 12 15 15 15 ns 12.5 15 12 15 15 15 ns tRAS 45 45 45 45 45 40 ns tRC 57.5 60 57 60 60 55 ns Note1 tRP Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP are the values for a single bank Πρεχηαργε, which are shown in the table above. Rev. 0.2 /Dec 2006 20 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Timing Parameters by Speed Grade Parameter DDR2-400 Symbol DDR2-533 Unit min max min max Note DQ output access time from CK/CK tAC -600 +600 -500 +500 ps DQS output access time from CK/CK tDQSCK -500 +500 -450 +450 ps CK high-level width tCH 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 tCK tHP min(tCL, tCH) - min(tCL, tCH) - ps 11,12 Clock cycle time, CL=x tCK 5000 8000 3750 8000 ps 15 DQ and DM input setup time(differential strobe) tDS(base) 150 - 100 - ps 6,7,8,20 DQ and DM input hold time(differential strobe) tDH(base) 275 - 225 - ps 6,7,8,21 DQ and DM input setup time(single ended strobe) tDS 25 - -25 - ps 6,7,8,20 DQ and DM input hold time(single ended strobe) tDH 25 - -25 - ps 6,7,8,21 Control & Address input pulse width for each input tIPW 0.6 - 0.6 - tCK DQ and DM input pulse width for each input tDIPW 0.35 - 0.35 - tCK Data-out high-impedance time from CK/CK tHZ - tAC max - tAC max ps 18 DQS low-impedance time from CK/CK tLZ (DQS) tAC min tAC max tAC min tAC max ps 18 DQ low-impedance time from CK/CK tLZ (DQ) 2*tAC min tAC max 2*tAC min tAC max ps 18 DQS-DQ skew for DQS and associated DQ signals tDQSQ - 350 - 300 ps 13 DQ hold skew factor tQHS - 450 - 400 ps 12 DQ/DQS output hold time from DQS tQH tHP - tQHS - tHP - tQHS - ps Write command to first DQS latching transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK DQS input high pulse width tDQSH 0.35 - 0.35 - tCK DQS input low pulse width tDQSL 0.35 - 0.35 - tCK DQS falling edge to CK setup time tDSS 0.2 - 0.2 - tCK DQS falling edge hold time from CK tDSH 0.2 - 0.2 - tCK Mode register set command cycle time tMRD 2 - 2 - tCK Write postamble tWPST 0.4 0.6 0.4 0.6 tCK Write preamble tWPRE 0.35 - 0.35 - tCK Address and control input setup time tIS 350 - 250 - ps 5,7,9,23 Address and control input hold time tIH 475 - 375 - ps 5,7,9,23 Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 tCK Active to active command period for 1KB page size products (x4, x8) tRRD 7.5 - 7.5 - ns 4 Active to active command period for 2KB page size products (x16) tRRD 10 - 10 - ns 4 CK half period Rev. 0.2 /Dec 2006 10 21 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP -Continued Parameter DDR2-400 Symbol DDR2-533 min max min max Uni t Note Four Active Window for 1KB page size products tFAW 37.5 - 37.5 - Four Active Window for 2KB page size products tFAW 50 - 50 - CAS to CAS command delay tCCD 2 Write recovery time tWR 15 - 15 - ns Auto precharge write recovery + precharge time tDAL WR+tRP* - WR+tRP* - tCK 14 Internal write to read command delay tWTR 10 - 7.5 - ns 24 Internal read to precharge command delay tRTP 7.5 7.5 ns 3 Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 - 200 - tCK Exit precharge power down to any non-read command tXP 2 - 2 - tCK Exit active power down to read command tXARD 2 2 tCK 1 Exit active power down to read command (Slow exit, Lower power) tXARDS 6 - AL 6 - AL tCK 1, 2 tCKE 3 3 tCK tAOND 2 2 2 2 tCK AON tAC(min) tAC(max) +1 tAC(min) tAC(max) +1 ns ODT turn-on(Power-Down mode) AONP D tAC(min)+ 2 2tCK+tAC (max) +1 tAC(min)+ 2 2tCK+tAC (max)+1 ns ODT turn-off delay t AOFD 2.5 2.5 2.5 2.5 tCK tAOF tAC(min) tAC(max) + 0.6 tAC(min) tAC(max) + 0.6 ns ODT turn-off (Power-Down mode) tAOFPD tAC(min)+ 2 2.5tCK+tA C(max)+1 tAC(min)+ 2 2.5tCK+t AC(max) +1 ns ODT to power down entry latency tANPD 3 3 tCK ODT power down exit latency tAXPD 8 8 tCK OCD drive mode output delay tOIT 0 tDelay tIS+tCK+tI H CKE minimum pulse width (high and low pulse width) ODT turn-on delay t ODT turn-on t ODT turn-off Minimum time clocks remains ON after CKE asynchronously drops LOW Rev. 0.2 /Dec 2006 2 12 0 tIS+tCK+tI H ns tCK 12 16 17 ns ns 15 22 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Parameter DDR2-667 Symbol DDR2-800 Unit min max min max Note DQ output access time from CK/CK tAC -450 +450 -400 +400 ps DQS output access time from CK/CK tDQSCK -400 +400 -350 +350 ps CK high-level width tCH 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 tCK CK half period tHP min(tCL, tCH) - min(tCL, tCH) - ps 11,12 Clock cycle time, CL=x tCK 3000 8000 2500 ps 15 DQ and DM input setup time tDS(base) 100 - 50 - ps 6,7,8,20 DQ and DM input hold time tDH(base) 175 - 125 - ps 6,7,8,21 Control & Address input pulse width for each input tIPW 0.6 - 0.6 - tCK DQ and DM input pulse width for each input tDIPW 0.35 - 0.35 - tCK Data-out high-impedance time from CK/CK tHZ - tAC max - tAC max ps 18 DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max ps 18 DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps 18 DQS-DQ skew for DQS and associated DQ signals tDQSQ - 240 - 200 ps 13 DQ hold skew factor tQHS - 340 - 300 ps 12 DQ/DQS output hold time from DQS tQH tHP - tQHS - tHP - tQHS - ps First DQS latching transition to associated clock edge tDQSS - 0.25 + 0.25 - 0.25 + 0.25 tCK DQS input high pulse width tDQSH 0.35 - 0.35 - tCK DQS input low pulse width tDQSL 0.35 - 0.35 - tCK DQS falling edge to CK setup time tDSS 0.2 - 0.2 - tCK DQS falling edge hold time from CK tDSH 0.2 - 0.2 - tCK Mode register set command cycle time tMRD 2 - 2 - tCK Write postamble tWPST 0.4 0.6 0.4 0.6 tCK Write preamble tWPRE 0.35 - 0.35 - tCK Address and control input setup time tIS(base) 200 - 175 - ps 5,7,9,22 Address and control input hold time tIH(base) 275 - 250 - ps 5,7,9,23 Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK 19 Read postamble tRPST 0.4 0.6 0.4 0.6 tCK 19 Activate to precharge command tRAS 45 70000 45 70000 ns 3 Active to active command period for 1KB page size products (x4, x8) tRRD 7.5 - 7.5 - ns 4 Active to active command period for 2KB page size products (x16) tRRD 10 - 10 - ns 4 Four Active Window for 1KB page size products tFAW 37.5 - 37.5 - ns Four Active Window for 2KB page size products tFAW 50 - 50 - ns CAS to CAS command delay tCCD 2 Write recovery time tWR 15 - 15 - ns Auto precharge write recovery + precharge time tDAL WR+tRP - WR+tRP - tCK Rev. 0.2 /Dec 2006 2 10 tCK 14 23 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP -ContinueDDR2-667 Symbol Parameter DDR2-800 min max min max - 7.5 - Unit Note Internal write to read command delay tWTR 7.5 Internal read to precharge command delay tRTP 7.5 7.5 ns Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 - 200 - tCK Exit precharge power down to any non-read command tXP 2 - 2 - tCK Exit active power down to read command tXARD 2 2 tCK 1 Exit active power down to read command (Slow exit, Lower power) tXARDS 7 - AL 8 - AL tCK 1, 2 CKE minimum pulse width (high and low pulse width) t 3 3 tCK ODT turn-on delay t 2 2 2 2 tCK ODT turn-on t tAC(min) tAC(max) +0.7 tAC(min) tAC(max) +0.7 ns ODT turn-on(Power-Down mode) tAONPD tAC(min)+2 2tCK+ tAC(max)+1 tAC(min) +2 2tCK+ tAC(max)+1 ns ODT turn-off delay t 2.5 2.5 2.5 2.5 tCK ODT turn-off tAOF tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max) +0.6 ns ODT turn-off (Power-Down mode) t tAC(min) +2 2.5tCK+ tAC(max)+1 tAC(min) +2 2.5tCK+ tAC(max)+1 ns CKE AOND AON AOFD AOFPD ns ODT to power down entry latency tANPD 3 3 tCK ODT power down exit latency tAXPD 8 8 tCK OCD drive mode output delay tOIT 0 Minimum time clocks remains ON after CKE asynchronously drops LOW Rev. 0.2 /Dec 2006 tDelay tIS+tCK+tIH 12 0 tIS+tCK +tIH 12 3 6,16 17 ns ns 15 24 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP General notes, which may apply for all AC parameters 1. Slew Rate Measurement Levels a. Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed by design, but is not necessarily tested on each device. b. Input slew rate for single ended signals is measured from dc-level to ac-level: from VREF - 125 mV to VREF + 250 mV for rising edges and from VREF + 125 mV and VREF - 250 mV for falling edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = -250 mV to CK - CK = +500 mV (250mV to -500 mV for falling egdes). c. VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe. 2. DDR2 SDRAM AC timing reference load The following figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). VDDQ DUT DQ DQS DQS RDQS RDQS Output Timing reference point VTT = VDDQ/2 25Ω AC Timing Reference Load The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal. 3. DDR2 SDRAM output slew rate test load Output slew rate is characterized under the test conditions as shown below. VDDQ DUT DQ DQS, DQS RDQS, RDQS Output Test point VTT = VDDQ/2 25Ω Slew Rate Test Load Rev. 0.2 /Dec 2006 25 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 4. Differential data strobe DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS through a 20 ohm to 10 K ohm resistor to insure proper operation. tDQSH DQS DQS/ DQS tDQSL DQS tWPRE tWPST VIH(dc) VIH(ac) DQ D D VIL(dc) tDS VIH(ac) tDS DM D D VIL(ac) DMin DMin tDH DMin VIL(ac) tDH VIH(dc) DMin VIL(dc) Figure -- Data input (write) timing tCH tCL CK CK/CK CK DQS DQS/DQS DQS tRPRE tRPST DQ Q Q tDQSQmax Q Q tDQSQmax tQH tQH Figure -- Data output (read) timing 5. AC timings are for linear signal transitions. See System Derating for other signal transitions. 6. These parameters guarantee device behavior, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 7. All voltages referenced to VSS. 8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. Rev. 0.2 /Dec 2006 26 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Specific Notes for dedicated AC parameters 1. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be used for fast active power down exit timing. tXARDS is expected to be used for slow active power down exit timing where a lower power value is defined by each vendor data sheet. 2. AL = Additive Latency 3. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and tRAS(min) have been satisfied. 4. A minimum of two clocks (2 * tCK) is required irrespective of operating frequency 5. Timings are guaranteed with command/address input slew rate of 1.0 V/ns. See System Derating for other slew rate values. 6. Timings are guaranteed with data, mask, and (DQS/RDQS in singled ended mode) input slew rate of 1.0 V/ns. See System Derating for other slew rate values. 7. Timings are guaranteed with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1V/ns in single ended mode. See System Derating for other slew rate values. 8. tDS and tDH derating tDS, tDH Derating Values(ALL units in 'ps', Note 1 applies to entire Table) DQS, DQS Differential Slew Rate 4.0 V/ns 2.0 DQ Slew rate V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD △tD S H S H S H S H S H S H S H S H S H 125 45 125 45 +125 +45 - 1.5 83 21 83 21 +83 +21 95 33 - - - - - - - - - 1.0 0 0 0 0 0 0 12 12 24 24 - - - - - - - - 0.9 - - -11 -14 -11 -14 1 -2 13 10 25 22 - - - - - - 0.8 - - - - -25 -31 -13 -19 -1 -7 11 5 23 17 - - - - 0.7 - - - - -43 -54 -31 -42 -42 -19 -7 -8 5 -6 17 6 - - 0.6 - - - - -67 -83 - - -43 -59 -31 -47 -19 -35 -7 -23 5 -11 0.5 - - - - -110 -125 - - - - -74 -89 -62 -77 -50 -65 -38 -53 0.4 - - - - -175 -188 - - - - - - -127 -140 -115 -128 -103 -116 1) For all input signals the total tDS(setup time) and tDH(hold time) required is calculated by adding the datasheet value to the derating value listed in Table x. Setup(tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vih(ac)min. Setup(tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vil(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded ‘ VREF(dc) to ac region’, use nominal slew rate for derating value(see Fig a.) If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value(see Fig b.) Hold(tDH) nominal slew rate for a rising signal is defined as the slew ρατε between the last crossing of Vil(dc) max and the first crossing of VREF(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of Vih(dc) min and the first crossing of VREF(dc). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value(see Fig d.) Although for slow slew rates the total setup time might be negative(i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rate in between the values listed in table x, the derating valued may obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization. Rev. 0.2 /Dec 2006 27 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Fig. a Illustration of nominal slew rate for tIS,tDS CK,DQS CK, DQS tIS, tDS tIH, tDH tIS, tDS tIH, tDH VDDQ VIH(ac)min VIH(dc)min nominal slew rate VREF(dc) nominal slew rate VIL(dc)max VREF to ac region VIL(ac)max Vss Delta TF Setup Slew Rate = Falling Signal Rev. 0.2 /Dec 2006 VREF(dc)-VIL(ac)max Delta TF Delta TR Setup Slew Rate = Rising Signal VIH(ac)min-VREF(dc) Delta TR 28 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Fig. -b Illustration of tangent line for tIS,tDS CK, DQS CK, DQS tIS, tDS tIH, tDH tIS, tDS tIH, tDH VDDQ nominal line VIH(ac)min VIH(dc)min tangent line VREF(dc) Tangent line VIL(dc)max VREF to ac region VIL(ac)max Nomial line Vss Delta TR Delta TF Setup Slew Rate Tangent line[VIH(ac)min-VREF(dc)] = Rising Signal Delta TR Setup Slew Rate Tangent line[VREF(dc)-VIL(ac)max] = Falling Signal Delta TF Rev. 0.2 /Dec 2006 29 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Fig. -c Illustration of nominal line for tIH, tDH CK, DQS CK, DQS tIS, tDS tIH, tDH tIS, tDS tIH, tDH VDDQ VIH(ac)min VIH(dc)min dc to VREF region VREF(dc) nominal slew rate nominal slew rate VIL(dc)max VIL(ac)max Vss Delta TR Hold Slew Rate = Rising Signal Rev. 0.2 /Dec 2006 VREF(dc)-VIL(dc)max Delta TR Delta TF VIH(dc)min - VREF(dc) Hold Slew Rate = Falling Signal Delta TF 30 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Fig. -d Illustration of tangent line for tIH , tDH CK, DQS CK, DQS tIS, tDS tIH, tDH tIS, tDS tIH, tDH VDDQ VIH(ac)min nominal line VIH(dc)min tangent line VREF(dc) dc to VREF region Tangent line nominal line VIL(dc)max VIL(ac)max Vss Delta TR Delta TF Hold Slew Rate Tangent line[VREF(dc)-VIL(ac)max] = Rising Signal Delta TR Tangent line[VIH(ac)min-VREF(dc)] Hold Slew Rate = Falling Signal Delta TF Rev. 0.2 /Dec 2006 31 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 9. tIS and tIH (input setup and hold) derating tIS, tIH Derating Values CK, CK Differential Slew Rate 1.5 V/ns 2.0 V/ns 1.0 V/ns △ tIS △tIH △tIS △tIH △tIS △ tIH Units Notes 4.0 +187 +94 TBD TBD TBD TBD ps 1 3.5 +179 +89 TBD TBD TBD TBD ps 1 3.0 +167 +83 TBD TBD TBD TBD ps 1 2.5 +150 +75 TBD TBD TBD TBD ps 1 2.0 +125 +45 TBD TBD TBD TBD ps 1 1.5 +83 +21 TBD TBD TBD TBD ps 1 1.0 +0 0 TBD TBD TBD TBD ps 1 0.9 -11 -14 TBD TBD TBD TBD ps 1 -25 -31 TBD TBD TBD TBD ps 1 -43 -54 TBD TBD TBD TBD ps 1 -67 -83 TBD TBD TBD TBD ps 1 0.5 -100 -125 TBD TBD TBD TBD ps 1 0.4 -150 -188 TBD TBD TBD TBD ps 1 0.3 -223 -292 TBD TBD TBD TBD ps 1 0.25 -250 -375 TBD TBD TBD TBD ps 1 Command / 0.8 Address Slew 0.7 rate(V/ns) 0.6 0.2 -500 -500 TBD TBD TBD TBD ps 1 0.15 -750 -708 TBD TBD TBD TBD ps 1 0.1 -1250 -1125 TBD TBD TBD TBD ps 1 1) For all input signals the total tIS(setup time) and tIH(hold) time) required is calculated by adding the datasheet value to the derating value listed in above Table. Setup(tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIH(ac)min. Setup(tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate for line between shaded ‘VREF(dc) to ac region’, use nominal slew rate for derating value(see fig a.) If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value(see Fig b.) Hold(tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first crossing of VREF(dc). Hold(tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc). If the actual σιγναλ is always later than the nominal slew rate line between shaded ‘dc to VREF(dc) region’, use nominal slew rate for derating value(see Fig.c) If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value(see Fig d.) Although for slow rates the total setup time might be negative(i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rates in between the values listed in table, the derating values may obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization. Rev. 0.2 /Dec 2006 32 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 11. MIN ( t CL, t CH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH). For example, t CL and t CH are = 50% of the period, less the half period jitter ( t JIT(HP)) of the clock source, and less the half period jitter due to crosstalk ( t JIT(crosstalk)) into the clock traces. 12. t QH = t HP – t QHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH, tCL). tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate mismatch between DQS/ DQS and associated DQ in any given cycle. 14. t DAL = (nWR) + ( tRP/tCK): For each of the terms above, if not already an integer, round to the next highest integer. tCK refers to the application clock period. nWR refers to the t WR parameter stored in the MRS. Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks =4 +(4)clocks=8clocks. 15. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In case of clock frequency change during precharge power-down, a specific procedure is required as described in section 2.9. 16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND. 17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. 18. tHZ and tLZ transitions occur in the same access time as valid data transitions. Thesed parameters are referenced to a specific voltage level which specifies when the device output is no longer driving(tHZ), or begins driving (tLZ). Below figure shows a method to calculate the point when device is no longer driving (tHZ), or begins driving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistenet. Rev. 0.2 /Dec 2006 33 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST), or begins driving (tRPRE). Below figure shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE). Below Figure shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. VOH + xmV VTT + 2xmV VOH + 2xmV VTT + xmV tHZ tRPST end point tHZ tRPRE begin point VOL + 1xmV VTT -xmV VOL + 2xmV VTT - 2xmV tHZ , tRPST end point = 2*T1-T2 tLZ , tRPRE begin point = 2*T1-T2 20. Input waveform timing with differential data strobe enabled MR[bit10] =0, is referenced from the input signal crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal applied to the device under test. 21. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(dc) level to the differential data strobe crosspoint for a rising signal and VIL(dc) to the differential data strobe crosspoint for a falling signal applied to the device under test. Differential Input waveform timing DQS DQS tDS tDH tDS tDH VDDQ VIH(ac)min VIH(dc)min VREF(dc) VIL(dc)max VIL(ac)max VSS 22. Input waveform timing is referenced from the input signal crossing at the VIH(ac) level for a rising signal and VIL(ac) for a falling signal applied to the device under test. 23. Input waveform timing is referenced from the input signal crossing at the VIL(dc) level for a rising signal and VIH(dc) for a falling signal applied to the device under test. Rev. 0.2 /Dec 2006 34 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Rev. 0.2 /Dec 2006 35 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP 5. Package Dimensions Package Dimension(x4,x8) 60Ball Fine Pitch Ball Grid Array Outline 8.00 ± 0.10 0.15 ± 0.05 11.40 ± 0.10 A1 BALL MARK < Top View> < SIDE View> 1.10 ± 0.10 0.80 X 8 = 6.40 0.34 ± 0.05 2.10 ± 0.10 9 8 7 2-R0.13MAX A1 BALL MARK 3 2 1 0.80 A B C D E F G H J K L 60X Φ0.45 ± 0.05 1.60 1.60 0.80 < Bottom View> Note: All dimensions are in millimeters. Rev. 0.2 /Dec 2006 36 HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Package Dimension(x16) 84Ball Fine Pitch Ball Grid Array Outline 8.00 ± 0.10 0.15 ± 0.05 13.00 ± 0.10 A1 BALL MARK < Top View> < SIDE View> 1.10 ± 0.10 0.80 X 8 = 6.40 2.10 ± 0.10 A1 BALL MARK 3 2 1 9 8 7 0.34 ± 0.05 0.80 A B C D E F G H J K L M N P R 84X Φ0.45 ± 0.05 2-R0.13MAX 1.60 1.60 0.80 < Bottom View> Note: All dimensions are in millimeters. Rev. 0.2 /Dec 2006 37