PD - 95761
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ48
for Linear/Audio Applications
Lead-Free
IRFZ48RSPbF
IRFZ48RLPbF
®
HEXFET Power MOSFET
D
VDSS = 60V
RDS(on) = 0.018Ω
G
ID = 50*A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D2Pak
IRFZ48RS
TO-262
IRFZ44RL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
50*
50*
290
190
1.3
± 20
100
4.5
-55 to + 175
A
W
W/°C
V
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.8
–––
62
°C/W
1
08/24/04
IRFZ48RS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
60
–––
–––
2.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.060
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.1
250
210
250
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2400
1300
190
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.018
Ω
VGS = 10V, ID = 43A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 43A
25
VDS = 60V, VGS = 0V
µA
250
VDS = 48V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
110
ID = 72A
29
nC
VDS = 48V
36
VGS = 10V, See Fig. 6 and 13
–––
VDD = 30V
–––
ID = 72A
ns
–––
RG = 9.1Ω
–––
RD = 0.34Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 50*
showing the
A
G
integral reverse
––– ––– 290
S
p-n junction diode.
––– ––– 2.0
V
TJ = 25°C, IS = 72A, VGS = 0V
––– 120 180
ns
TJ = 25°C, IF = 72A
––– 0.50 0.80
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 72A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
max. junction temperature. ( See fig. 11 )
VDD = 25V, Starting TJ = 25°C, L = 22µH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 72A. (See Figure 12)
* Current limited by the package, (Die Current = 72A)
2
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IRFZ48RS/LPbF
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics
2.5
ID = 72A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ48RS/LPbF
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
10us
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFZ48RS/LPbF
V DS
80
LIMITED BY PACKAGE
VGS
D.U.T.
RG
ID , Drain Current (A)
RD
+
V
DD
60
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
DRIVER
D.U.T
RG
+
- VDD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ48RS/LPbF
250
ID
29A
51A
BOTTOM 72A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ48RS/LPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ48RS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in as sembly line
pos ition indicates "Lead-Free"
PART NUMB ER
F530S
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INT ERNAT IONAL
RE CT IFIE R
LOGO
AS S EMBLY
LOT CODE
8
PART NUMBE R
F530S
DAT E CODE
P = DE S IGNAT E S LEAD-F REE
PRODUCT (OPT IONAL)
YE AR 0 = 2000
WEEK 02
A = AS S EMBLY S IT E CODE
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IRFZ48RS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
L OT CODE 1789
AS S E MBLED ON WW 19, 1997
IN THE AS S EMB LY LINE "C"
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
INTERNAT IONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNATIONAL
RECTIFIER
LOGO
AS S EMBLY
L OT CODE
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PART NUMBER
DATE CODE
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
YE AR 7 = 1997
WEE K 19
A = AS S EMBL Y S ITE CODE
9
IRFZ48RS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
10
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