Sirectifier MUR1660 Ultra fast recovery diode Datasheet

MUR1660
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
600
MUR1660
Symbol
VRRM
V
600
Test Conditions
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
IFRMS
IFAVM
TC=140oC; rectangular, d=0.5
35
16
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
110
A
0.1
mJ
0.1
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=1A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
P1
o
C
95
W
0.4...0.6
Nm
2
g
typical
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR1660
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
VF
IF=16A; TVJ=150oC
TVJ=25oC
1.35
2.04
V
RthJC
RthCH
0.5
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
trr
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
K/W
35
o
IRM
1.6
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ns
4.9
ADVANTAGES
A
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR1660
Ultra Fast Recovery Diodes
40
2000
A
30
IF
1500
TVJ= 25°C
20
IRM
1000
10
1
VF
2
IF= 30A
IF= 15A
IF= 7.5A
Fig. 1 Forward current IF versus VF
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
120
trr
Kf
IRM
0.0
IF= 30A
IF= 15A
IF= 7.5A
40
400
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.6
VFR
ıs
1.2
tfr
10
80
120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
0.8
5
70
0
200
400
600
800 1000
A/us
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
10
0
0.4
0
200
400
0.0
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
ZthJC
1
2
3
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.0052
0.0003
0.017
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
P3
tfr
90
80
0
200
VFR
15
Qr
0.5
0
TVJ= 100°C
V IF = 15A
110
100
1.0
0
20
TVJ= 100°C
VR = 300V
ns
1.5
IF= 30A
IF= 15A
IF= 7.5A
10
0
100
V
30
20
500
0
TVJ= 100°C
VR = 300V
A
Qr
TVJ=150°C
TVJ=100°C
0
40
TVJ= 100°C
nC VR = 300V
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
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