LED DOT MATRIX BL-M34X581XX n Ø Ø Ø Ø Ø Ø Features: 87.63mm (3.4”) F 7.62 dot matrix LED display, BI-COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Electrical-optical characteristics: (Ta=25℃) (Test Condition: IF=20mA) Part No BL-M34A581EG-XX BL-M34A581DUG-XX BL-M34A581UEUG-X X Iv λP (nm) Typ Max TYP.(mcd) AlGaInP 660 2.10 2.50 140 Green GaP/GaP 570 2.20 2.50 125 Orange GaAsP/Ga P 635 2.10 2.50 110 Green GaP/GaP 570 2.20 2.50 125 Ultra Red AlGaInP 660 2.10 2.50 160 Ultra Green AlGaInP 574 2.20 2.50 190 BL-M34B581UEUG-X Ultra Orange AlGaInP 630 2.10 2.50 150 X Ultra Green AlGaInP 574 2.20 2.50 190 Row Cathode Column Anode BL-M34A581SG-XX VF Unit:V Chip Row Anode Column Cathode BL-M34B581SG-XX Emitted Color Super Red BL-M34B581EG-XX BL-M34B581DUG-XX Material n -XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear n 1 2 3 4 5 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25°C) S G E Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG 30 75 5 30 80 5 30 80 5 30 75 5 30 75 5 30 65 5 mW 150 150 150 150 150 150 mA Lead Soldering Temperature T SOL D UG UE U nit Parameter mA V -40 to +80 -40 to +85 ℃ Max.260±5 ℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) ℃ APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] ℃ LED DOT MATRIX BL-M34X581XX ■ Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M34X581XX ■ Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(λ p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 3.0 2.0 1.0 0 20 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 0.2 4 3 2 -20 -10 0 10 20 30 40 50 60 80 100 4 3 2 70 1 AMBIENT TEMPERATURE Ta(℃ ) 60 30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak M AX. IDC MAX. 0.5 40 AMBIENT TEMPERATURE Ta(℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE 3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 1 5 4 2 3 0.1 -30 40 FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT Ipeak MAX. IDC MAX. REL ATIVE LUMIN OU S IN TENSITY 1 5 B FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 3 2 50 1 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) NOTE:25℃ free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000