FDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 11 A, 40 V. • High performance trench technology for extremely low RDS(ON) Applications • Low gate charge (35 nC typical) • DC/DC converter • High power and current handling capability D D RDS(ON) = 13 mΩ @ VGS = 4.5 V D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 11 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.4 (Note 1c) 1.2 – Continuous – Pulsed TJ, TSTG 50 W –55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4672A FDS4672A 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS4672A Rev C(W) FDS4672A May 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA 40 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA 2.0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA, Referenced to 25°C 37 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 4.5 V, ID = 11 A VGS=4.5 V, ID =11A, TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 11 A 0.8 1.2 –4 10 15 mV/°C 13 21 50 mΩ A 65 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf VDS = 20 V, V GS = 0 V, f = 1.0 MHz 4766 pF 346 pF 155 pF (Note 2) VDD = 20 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 17 31 ns 9 18 ns Turn–Off Delay Time 43 68 ns Turn–Off Fall Time 14 25 ns 35 49 nC Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, ID = 11 A, VGS = 4.5 V 7.8 nC 8.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage (Note 2) 0.7 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS4672A Rev C(W) FDS4672A Electrical Characteristics FDS4672A Typical Characteristics 50 1.6 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 3.5V 40 3.0V 30 20 2.0V 10 0 0 0.5 1 1.5 1.4 VGS = 2.5V 1.2 3.0V 3.5V 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.03 ID = 11A VGS = 4.5V 1.8 ID = 5.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.026 0.022 TA = 125oC 0.018 0.014 TA = 25oC 0.01 0.006 -50 -25 0 25 50 75 100 125 150 175 1.5 2 2.5 TJ, JUNCTION TEMPERATURE (oC) 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 70 25oC IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = 5V 60 ID, DRAIN CURRENT (A) 4.0V 1 o 125 C 50 40 30 20 10 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4672A Rev C(W) FDS4672A Typical Characteristics 7000 ID = 11A VDS = 10V f = 1 MHz VGS = 0 V 20V 4 5600 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 4200 2800 1400 COSS CRSS 0 0 0 10 20 30 40 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 1ms 10ms 100ms 1s RDS(ON) LIMIT 10 10s 1 DC VGS = 4.5V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4672A Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3