AP09T10GK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product BVDSS 100V RDS(ON) 300mΩ ID G 2.1A S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low onresistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. S D SOT-223 G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Rating Units Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TA=25℃ 3 Drain Current , VGS @ 10V 2.1 A ID@TA=70℃ Drain Current3, VGS @ 10V 1.7 A Symbol VDS 1 8 A 2.78 W Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG TJ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 45 ℃/W 1 201501122 AP09T10GK-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=2A - - 300 mΩ VGS=4.5V, ID=1A - - 600 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=2A - 2 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=2A - 5 8 nC Qgs Gate-Source Charge VDS=50V - 1.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.7 - nC td(on) Turn-on Delay Time VDS=50V - 6 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω - 10 - ns tf Fall Time VGS=10V - 4 - ns Ciss Input Capacitance VGS=0V - 190 300 pF Coss Output Capacitance VDS=15V - 32 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 22 - pF Rg Gate Resistance f=1.0MHz 1 2 4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=2A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 39 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP09T10GK-HF 10 8 T A = 25 o C ID , Drain Current (A) 8 ID , Drain Current (A) T A = 150 o C 10V 7.0V 6.0V 6 5.0V 4 10V 7.0V 6.0V 6 5.0V 4 V G = 4.0V 2 2 V G = 4.0V 0 0 0 2 4 6 8 0 10 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 600 2.4 I D =2A V G =10V I D =1A o T A =25 C Normalized RDS(ON) RDS(ON) (mΩ) 2.0 500 400 1.6 1.2 300 0.8 0.4 200 2 4 6 8 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 4 I D =250uA T j =150 o C Normalized VGS(th) IS(A) 3 T j =25 o C 2 1.2 0.8 0.4 1 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP09T10GK-HF ID=2A V DS = 50 V 10 300 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 400 12 6 200 C iss 4 100 2 C oss C rss 0 0 0 1 2 3 4 5 6 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) Operation in this area limited by RDS(ON) 100us 1 1ms 10ms 100ms 0.1 o 1s T A =25 C Single Pulse DC 0.1 1 10 100 0.1 0.1 0.05 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120℃/W 0.001 0.01 0.01 0.2 0.0001 1000 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 6 4 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 5 4 3 2 T j =150 o C T j =25 o C 3 2 1 1 0 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 7 8 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Drain Current v.s. Ambient Temperature 4 AP09T10GK-HF MARKING INFORMATION 09T10GK YWWSSS Part Number meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5