AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View VDS 700V@150℃ ID (at VGS=10V) 4A RDS(ON) (at VGS=10V) < 2.3Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View Top View TO251 Top View Bottom View D D D G S G S S G D D S G AOI4N60 AOD4N60 Continuous Drain CurrentB VGS TC=25°C TC=100°C S S D G G S AOU4N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage D G Maximum 600 Units V ±30 V 4 ID 2.6 A Pulsed Drain Current C IDM Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 118 mJ Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 235 5 104 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG 0.83 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev2: Jan 2012 14 PD TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W www.aosmd.com Page 1 of 6 AOD4N60/AOI4N60/AOU4N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V VDS=600V, VGS=0V 0.67 V V/ oC 1 VDS=480V, TJ=125°C 10 ±100 3.4 µA 4.1 4.5 nΑ V 2.3 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A 1.8 gFS Forward Transconductance VDS=40V, ID=2A 6 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 14 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 420 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=4A S 0.76 528 640 pF 35 53 70 pF 2.5 4.8 7 pF 1.2 2.5 3.8 Ω 9.5 12 14.5 nC 2.8 3.6 4.5 nC 2.2 4.4 6.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V 150 190 230 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 1.9 2.4 3 VGS=10V, VDS=300V, ID=4A, RG=25Ω 17 ns 26 ns 34 ns 21 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: Jan 2012 www.aosmd.com Page 2 of 6 AOD4N60/AOI4N60/AOU4N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 100 10V 7 VDS=40V -55°C 6 6.5V 10 ID(A) ID (A) 5 6V 4 3 125°C 1 2 VGS=5.5V 25°C 1 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 3 4.0 2.5 RDS(ON) (Ω Ω) Normalized On-Resistance 4.5 3.5 VGS=10V 3.0 2.5 2.0 1.5 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V ID=2A 2 1.5 1 0.5 0 1.0 0 2 -100 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+02 ID=30A 125°C 40 1.0E+00 1 IS (A) BVDSS (Normalized) 1.0E+01 1.1 125° 1.0E-01 25°C 1.0E-02 0.9 25° 1.0E-03 0.8 1.0E-04 -100 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev2: Jan 2012 -50 0 www.aosmd.com 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Page 3 of 6 AOD4N60/AOI4N60/AOU4N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V ID=2A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 10 3 Crss 0 1 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 18 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10 RDS(ON) 1 100µs 1ms DC TJ(Max)=150°C TC=25°C 600 10µs Power (W) ID (Amps) 1 400 10ms 0.1 200 TJ(Max)=150°C 0.01 0 1 10 100 1000 VDS (Volts) 0.00001 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev2: Jan 2012 www.aosmd.com Page 4 of 6 AOD4N60/AOI4N60/AOU4N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 100 4 Current rating ID(A) Power Dissipation (W) 120 80 60 40 3 2 1 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 500 TJ(Max)=150°C TA=25°C Power (W) 400 300 200 100 0 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton Single Pulse T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev2: Jan 2012 www.aosmd.com Page 5 of 6 AOD4N60/AOI4N60/AOU4N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev2: Jan 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6