AP6N6R5H Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic 60V RDS(ON) 6.5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 68A S Description AP4604 series AP6N6R5 seriesare arefrom from Advanced Advanced Power Power innovated design and silicon and silicon process process technology technology to to achieve achievethe thelowest lowest possible possible onon-resistance resistance andand fast fast switching switching performance. performance. It provides It provides the designer the designer with anefficient extremedevice efficient userange in a wide with an extreme for device use in aforwide of power range of power applications. applications. The TO-220 package is widely preferred for all commercialindustrial throughis widely hole applications. Thecommercial-industrial low thermal TO-252 package preferred for all resistance and low package using cost contribute to the technique worldwide and surface mount applications infrared reflow popular package. suited for high current application due to the low connection resistance. G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) . Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 68 A ID@TC=100℃ Drain Current, VGS @ 10V 43 A 200 A 52 W 2 W 61 mJ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 4 3 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 4 Value Units 2.4 ℃/W 62.5 ℃/W 1 201612281 AP6N6R5H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=30A - - 6.5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=5V, ID=30A - 36 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= 20V, VDS=0V - - 100 nA Qg Total Gate Charge ID=30A - 33 52.8 nC Qgs Gate-Source Charge VDS=30V - 12 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8 - nC td(on) Turn-on Delay Time VDS=30V - 13 - ns tr Rise Time ID=30A - 47 - ns td(off) Turn-off Delay Time RG=1Ω - 17 - ns tf Fall Time VGS=10V - 6 - ns Ciss Input Capacitance VGS=0V - 2080 3328 pF Coss Output Capacitance VDS=30V - 1370 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance - 1 2 Ω Min. Typ. IS=30A, VGS=0V - - 1.3 V . f=1.0MHz Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=30A, VGS=0V - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test o 3.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω 4.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6N6R5H 100 200 o T C = 25 C 10V 9.0V 80 ID , Drain Current (A) ID , Drain Current (A) 160 8.0V 120 7.0V 80 V G =6.0V 40 7.0V 60 V G =6.0V 40 20 0 0 0 2 4 6 8 0 10 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 13 I D =30A I D =30A V G =10V T C =25 o C 9 . Normalized RDS(ON) 2.0 11 RDS(ON) (mΩ) 10V 9.0V 8.0V T C =150 o C 1.6 1.2 7 0.8 0.4 5 5 6 7 8 9 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 60 I D =250uA 50 1.6 o T j =150 C T j =25 C IS(A) 40 Normalized VGS(th) o 30 1.2 0.8 20 0.4 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6N6R5H f=1.0MHz 4000 I D =30A V DS =30V 10 3000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C iss 2000 4 C oss 1000 2 C rss 0 0 0 10 20 30 1 40 21 41 61 81 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 ID (A) Operation in this area limited by RDS(ON) 10 100us 1 1ms 10ms 0.1 T C =25 o C Single Pulse DC . Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.01 0.1 1 10 0.00001 100 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 80 100 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 80 60 40 60 40 T j =150 o C T j =25 o C 20 20 o T j = -55 C 0 0 25 50 75 100 T C , Case Temperature ( 125 o C) Fig 11. Drain Current v.s. Case Temperature 150 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4 AP6N6R5H 2 80 I D =1mA PD, Power Dissipation(W) Normalized BVDSS 1.6 1.2 0.8 60 40 20 0.4 0 0 -100 -50 0 T j 50 100 0 150 50 100 150 T C , Case Temperature( o C) , Junction Temperature ( o C) Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation 40 T j =25 o C RDS(ON) (mΩ) 30 20 . 10 V GS =10V 0 0 20 40 60 80 I D , Drain Current (A) Fig 15. Typ. Drain-Source on State Resistance 5 AP6N6R5H MARKING INFORMATION Part Number 6N6R5 YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6