Fairchild FDMS7692 N-channel powertrenchâ® mosfet 30 v, 7.5 mî© Datasheet

FDMS7692
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery.
Applications
„ MSL1 robust package design
„ IMVP Vcore Switching for Notebook
„ 100% UIL tested
„ VRM Vcore Switching for Desktop and Server
„ RoHS Compliant
„ OringFET / Load Switch
„ DC-DC Conversion
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
28
47
(Note 1a)
-Pulsed
14
A
50
Single Pulse Avalanche Energy
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
21
27
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
4.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7692
Device
FDMS7692
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
August 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
30
V
13
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.2
2.0
-6
mV/°C
VGS = 10 V, ID = 13 A
6.5
7.5
VGS = 4.5 V, ID = 10 A
9.5
13
VGS = 10 V, ID = 13 A, TJ = 125 °C
9.0
11
VDS = 5 V, ID = 13 A
68
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1015
1350
pF
325
435
pF
45
65
pF
1.0
2.0
Ω
ns
Switching Characteristics
8
16
2.7
10
ns
17
31
ns
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
2.3
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
15
22
nC
Qg
Total Gate Charge
10
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 13 A
7
Qgs
3.4
nC
Qgd
Gate to Drain “Miller” Charge
1.9
nC
VDD = 15 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.75
1.1
VGS = 0 V, IS = 13 A
(Note 2)
0.84
1.2
IF = 13 A, di/dt = 100 A/μs
IF = 13 A, di/dt = 300 A/μs
V
21
34
ns
6
12
nC
17
31
ns
12
21
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
2
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
VGS = 10 V
ID, DRAIN CURRENT (A)
40
VGS = 4.5 V
VGS = 4.0 V
30
VGS = 3.5 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
VGS = 3.0 V
0
0.0
10
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
VGS = 3.5 V
4
VGS = 4.0 V
2
VGS = 4. 5 V
0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
0
20
VGS = 10 V
30
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
30
ID = 13 A
VGS = 10 V
ID = 13 A
20
15
TJ = 125 oC
10
TJ = 25 oC
5
100 125 150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
ID, DRAIN CURRENT (A)
10
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 3.0 V
8
VDS = 5 V
30
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
4
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
5
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
3
1.2
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
ID = 13 A
1000
8
VDD = 15 V
6
VDD = 10 V
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
4
Coss
100
2
0
0
4
8
12
10
0.1
16
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs Drain
to Source Voltage
50
ID, DRAIN CURRENT (A)
50
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
40
30
VGS = 10 V
20
Limited by Package
VGS = 4.5 V
10
o
RθJC = 4.6 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
100 us
1
10 ms
P(PK), PEAK TRANSIENT POWER (W)
10
1 ms
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C
0.01
0.01
0.1
1
10
150
300
VGS = 10 V
100 200
SINGLE PULSE
RθJA = 125 oC/W
100
TA = 25 oC
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
THIS AREA IS
LIMITED BY rDS(on)
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
-2
10
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
14
12
CURRENT (A)
10
8
di/dt = 300 A/μs
6
4
2
0
-2
0
20
40
60
80
100
TIME (ns)
Figure 14. Body Diode Reverse
Recovery Characteristics
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
5
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS7692 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
7
www.fairchildsemi.com
FDMS7692 N-Channel PowerTrench® MOSFET
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