Dynex DIM200WLS12-A000 Igbt chopper module - lower arm control Datasheet

DIM200WLS12-A000
DIM200WLS12-A000
IGBT Chopper Module - Lower Arm Control
Replaces February 2004 version, issue FDS5697-2.0
FEATURES
■
10µs Short Circuit Withstand
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
FDS5697-3.0 June 2004
KEY PARAMETERS
VCES
(typ)
VCE(sat)*
(max)
IC
(max)
IC(PK)
1200V
2.2V
200A
400A
*(Measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Choppers
■
Motor Controllers
■
Induction Heating
■
Resonant Converters
■
Power Supplies
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
Fig. 1 Chopper circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WLS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/8
DIM200WLS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 80˚C
200
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
1390
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
6.25
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
QPD
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
10
PC
IC
I2t
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
Rth(j-c)
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Parameter
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
90
˚C/kW
-
-
194
˚C/kW
-
-
15
˚C/kW
junction to case
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Thermal resistance - diode (per arm)
Continuous dissipation -
(Antiparallel and freewheel diode)
junction to case
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
3
-
5
Nm
2.5
-
5
Nm
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector cut-off current
VGE = 0V, VCE = VCES
-
-
0.25
mA
(IGBT and Diode arm)
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
6
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
1
µA
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 200A
-
2.2
2.7
V
VGE = 15V, IC = 200A, , Tcase = 125˚C
-
2.6
3.1
V
ICES
IGES
IF
Diode forward current
DC
-
-
200
A
IFM
Diode maximum forward current
tp = 1ms
-
-
400
A
VF†
Diode forward voltage
IF = 200A
-
2.2
2.5
V
(IGBT and Diode arm)
IF = 200A, Tcase = 125˚C
-
2.3
2.6
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
33
-
nF
LM
Module inductance - per arm
-
-
20
-
nH
RINT
Internal transistor resistance
-
-
0.23
-
mΩ
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 900V,
I1
-
1375
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
1125
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/8
DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 200A
-
600
-
ns
Fall time
VGE = ±15V
-
50
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
20
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
240
-
ns
L ~ 70nH
-
95
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
25
-
mJ
Qg
Gate charge
-
2
-
µC
Qrr
Diode reverse recovery charge
IF = 200A, VR = 600V,
-
30
-
µC
Irr
Diode reverse current
dIF/dt = 2300A/µs
-
150
-
A
-
13
-
mJ
Min.
Typ.
Max.
Units
IC = 200A
-
800
-
ns
Fall time
VGE = ±15V
-
70
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
27
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
385
-
ns
L ~ 70nH
-
110
-
ns
-
40
-
mJ
IF = 200A, VR = 600V,
-
50
-
µC
dIF/dt = 2000A/µs
-
160
-
A
-
20
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/8
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM200WLS12-A000
TYPICAL CHARACTERISTICS
400
400
Common emitter
Tcase = 25˚C
Common emitter
Tcase = 125˚C
350 Vce is measured at power busbars
350 Vce is measured at power busbars
300
300
and not the auxiliary terminals
Collector current, IC - (A)
Collector current, IC - (A)
and not the auxiliary terminals
250
200
150
100
200
150
100
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
50
0
0
250
0.5
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, Vce - (V)
3.5
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
50
0
0
4.0
Fig. 3 Typical output characteristics
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
4.5
5.0
Fig. 4 Typical output characteristics
45
55
Tc = 125˚C,
Vcc = 600V,
40 Rg = 4.7 Ohms
Tc = 125˚C,
Vcc = 600V,
50
IC = 200A
45
35
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
40
30
25
20
15
35
30
25
20
15
10
10
Eon
Eoff
Erec
5
0
0
50
100
150
Collector current, IC - (A)
Eon
Eoff
Erec
5
200
Fig. 5 Typical switching energy vs collector current
0
4
10
6
8
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
12
5/8
DIM200WLS12-A000
400
450
Tj = 25˚C
Tj = 125˚C
Module IC
Chip IC
VF is measured at power busbars
and not the auxiliary terminals
350
400
350
Collector current, IC - (A)
Forward current, IF - (A)
300
250
200
150
300
250
200
150
100
100
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
50 Tcase = 125˚C
Vge = 15V
Rg = 4.7 Ohms
0
0
200
400
600
800
1000 1200
Collector emitter voltage, Vce - (V)
4.0
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
300
1000
Tcase =125˚C
Transient thermal impedance, Zth (j-c) - (°C/kW )
Reverse recovery current, Irr - (A)
250
200
150
100
50
Diode
Transistor
100
10
IGBT
Diode
0
0
200
400
600
800
1000
1200
1400
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area - IGBT and
diode arm
6/8
1400
1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
2.10
0.11
4.49
0.10
2
11.62
3.14
25.28
3.21
0.1
Pulse width, tp - (s)
3
43.85
45.60
74.24
38.58
1
4
29.53
143.02
90.03
113.97
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM200WLS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
Nominal weight: 420g
Module outline type code: W
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
www.dynexsemi.com
Similar pages