DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces February 2004 version, issue FDS5697-2.0 FEATURES ■ 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-3.0 June 2004 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Choppers ■ Motor Controllers ■ Induction Heating ■ Resonant Converters ■ Power Supplies 7(E2) 6(G2) 1(A,C2) 2(E2) 3(K) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WLS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200WLS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/8 DIM200WLS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 80˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1390 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 6.25 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t THERMAL AND MECHANICAL RATINGS Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Symbol Rth(j-c) Clearance: 13mm CTI (Critical Tracking Index): 175 Test Conditions Parameter Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 90 ˚C/kW - - 194 ˚C/kW - - 15 ˚C/kW junction to case Rth(j-c) Rth(c-h) Tj Tstg - Thermal resistance - diode (per arm) Continuous dissipation - (Antiparallel and freewheel diode) junction to case Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C 3 - 5 Nm 2.5 - 5 Nm - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200WLS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units Collector cut-off current VGE = 0V, VCE = VCES - - 0.25 mA (IGBT and Diode arm) VGE = 0V, VCE = VCES, Tcase = 125˚C - - 6 mA Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.2 2.7 V VGE = 15V, IC = 200A, , Tcase = 125˚C - 2.6 3.1 V ICES IGES IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF† Diode forward voltage IF = 200A - 2.2 2.5 V (IGBT and Diode arm) IF = 200A, Tcase = 125˚C - 2.3 2.6 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 33 - nF LM Module inductance - per arm - - 20 - nH RINT Internal transistor resistance - - 0.23 - mΩ SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 1375 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 1125 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/8 DIM200WLS12-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 600 - ns Fall time VGE = ±15V - 50 - ns EOFF Turn-off energy loss VCE = 600V - 20 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 240 - ns L ~ 70nH - 95 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 25 - mJ Qg Gate charge - 2 - µC Qrr Diode reverse recovery charge IF = 200A, VR = 600V, - 30 - µC Irr Diode reverse current dIF/dt = 2300A/µs - 150 - A - 13 - mJ Min. Typ. Max. Units IC = 200A - 800 - ns Fall time VGE = ±15V - 70 - ns EOFF Turn-off energy loss VCE = 600V - 27 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 385 - ns L ~ 70nH - 110 - ns - 40 - mJ IF = 200A, VR = 600V, - 50 - µC dIF/dt = 2000A/µs - 160 - A - 20 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/8 Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200WLS12-A000 TYPICAL CHARACTERISTICS 400 400 Common emitter Tcase = 25˚C Common emitter Tcase = 125˚C 350 Vce is measured at power busbars 350 Vce is measured at power busbars 300 300 and not the auxiliary terminals Collector current, IC - (A) Collector current, IC - (A) and not the auxiliary terminals 250 200 150 100 200 150 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 250 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 4.0 Fig. 3 Typical output characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 45 55 Tc = 125˚C, Vcc = 600V, 40 Rg = 4.7 Ohms Tc = 125˚C, Vcc = 600V, 50 IC = 200A 45 35 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 40 30 25 20 15 35 30 25 20 15 10 10 Eon Eoff Erec 5 0 0 50 100 150 Collector current, IC - (A) Eon Eoff Erec 5 200 Fig. 5 Typical switching energy vs collector current 0 4 10 6 8 Gate resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 12 5/8 DIM200WLS12-A000 400 450 Tj = 25˚C Tj = 125˚C Module IC Chip IC VF is measured at power busbars and not the auxiliary terminals 350 400 350 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 300 250 200 150 100 100 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 50 Tcase = 125˚C Vge = 15V Rg = 4.7 Ohms 0 0 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 4.0 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 300 1000 Tcase =125˚C Transient thermal impedance, Zth (j-c) - (°C/kW ) Reverse recovery current, Irr - (A) 250 200 150 100 50 Diode Transistor 100 10 IGBT Diode 0 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area - IGBT and diode arm 6/8 1400 1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 2.10 0.11 4.49 0.10 2 11.62 3.14 25.28 3.21 0.1 Pulse width, tp - (s) 3 43.85 45.60 74.24 38.58 1 4 29.53 143.02 90.03 113.97 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200WLS12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 7(E2) 6(G2) 1(A,C2) 2(E2) 3(K) Nominal weight: 420g Module outline type code: W Fig. 11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/8 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. 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