N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (2) Total Power Dissipation at Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 500V ±20V 13A 8A 52A 150W 1.2W/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Max. 0.83 Units °C/W 30 INTERNAL PACKAGE INDUCTANCE Symbols Parameters Typ. LD Internal Drain Inductance 5 LS Internal Source Inductance 13 Units nH Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) Repetitive Rating: Pulse Width limited by max. junction temperature. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 1 of 3 N-CHANNEL POWER MOSET IRF450 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage Static Drain-Source On-State Resistance VGS = 0 ID = 250 µA VGS = 10V ID = 7A Gate Threshold Voltage VDS = VGS ID = 250µA 2 gfs Forward Transconductance VDS ≥ 15V I D = 7A 6 IDSS Zero Gate Voltage Drain Current VDS = 500V VGS = 0 250 VDS = 400V TC = 125°C 1000 IGSS Forward Gate-Source Leakage Reverse Gate-Source Leakage RDS(on) VGS(th) (1) IGSS (1) Min. Typ. Max. 500 Units V 0.4 Ω 4 V S(Ʊ) VGS = 20V 100 VGS = -20V -100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 2700 Coss Output Capacitance VDS = 25V 600 Crss Reverse Transfer Capacitance f = 1.0MHz 240 Qg Total Gate Charge VGS = 10V 82 Qgs Gate-Source Charge ID = 16A 40 Qgd Gate-Drain Charge VDS = 0.8 BVDSS 42 td(on) Turn-On Delay Time VDD = 250V tr Rise Time td(off) Turn-Off Delay Time tf Fall Time pF nC 35 190 ID = 12A ns 170 RG = 2.35Ω 130 SOURCE-DRAIN DIODE CHARACTERISTICS IS (1) ISM VSD (1) Trr Qrr (1) Continuous Source Current 13 Pulse Source Current 52 Diode Forward Voltage IS = 13A TJ = 25°C 1.4 VGS = 0 Reverse Recovery Time IS = 13A TJ = 150°C Reverse Recovery Charge VDD ≤ 50V di/dt = 100A/µs Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] A V 1300 ns 7.4 µC Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRF450 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204-AA) Pin 1 - Gate Pin 2 - Source Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 3 of 3