AP9971GS Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 36mΩ ID G 25A S Description AP4604 series are from Advanced Power innovated design and AP9971 silicon and silicon process process technology technology to toachieve achievethe the lowest lowest possible onon-resistance resistance andand fastfast switching switching performance. performance. It provides It provides the designer the with an extreme for device use in for a wide of power designer with anefficient extremedevice efficient use range in a wide range of power applications. applications. The TO-220 preferred for for all commercialTO-263 package packageis iswidely widely preferred all commercialindustrial through throughholehole applications. lowresistance thermal and applications. The lowThe thermal resistance and low packagetocost contribute popular to the worldwide low package cost contribute the worldwide package. popular package. G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 25 A ID@TC=100℃ Drain Current, VGS @ 10V 16 A 80 A 39 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 3.2 ℃/W 40 ℃/W 1 201508271 AP9971GS o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=18A - - 36 mΩ VGS=4.5V, ID=12A - - 50 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 35 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=18A - 16 28 nC Qgs Gate-Source Charge VDS=48V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC td(on) Turn-on Delay Time VDS=30V - 9 - ns tr Rise Time ID=18A - 32 - ns td(off) Turn-off Delay Time RG=1.2Ω - 22 - ns tf Fall Time VGS=10V - 5 - ns Ciss Input Capacitance VGS=0V - 1250 2000 pF Coss Output Capacitance VDS=25V Crss Rg - 160 - pF Reverse Transfer Capacitance . f=1.0MHz - 120 - pF Gate Resistance f=1.0MHz - 1.8 3.6 Ω Min. Typ. IS=25A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=18A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GS 100 100 o 60 V G =4.0V 40 60 5.0V 40 V G =4.0V 20 20 0 0 0 2 4 6 8 10 0 12 4 8 12 16 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 2.4 I D =18A I D =18A V G =10V T C =25 o C 30 . Normalized RDS(ON) 2.0 40 RDS(ON) (mΩ) 10V 8.0V 7.0V 6.0V 80 ID , Drain Current (A) 80 ID , Drain Current (A) o T C =150 C 10V 80V 7.0V 6.0V 5.0V T C = 25 C 1.6 1.2 20 0.8 0.4 10 2 4 6 8 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 20 I D =250uA 1.6 Normalized VGS(th) IS(A) 16 12 T j =150 o C T j =25 o C 8 4 1.2 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GS f=1.0MHz 10 3000 VGS , Gate to Source Voltage (V) I D =18A V DS =48V 2500 8 C (pF) 2000 6 1500 4 C iss 1000 2 500 C oss C rss 0 0 0 8 16 24 0 32 20 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 60 80 Fig 8. Typical Capacitance Characteristics 100 10 100us 1 . 1ms 10ms 100ms 0.1 T C =25 o C Single Pulse DC Normalized Thermal Response (Rthjc) 1 Operation in this area limited by RDS(ON) ID (A) 40 V DS ,Drain-to-Source Voltage (V) 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 28 60 V DS =5V T j =25 o C ID , Drain Current (A) ID , Drain Current (A) 50 21 14 T j =150 o C 40 30 20 7 10 0 0 25 50 75 100 T C , Case Temperature ( 125 o C) Fig 11. Drain Current v.s. Case Temperature 150 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4 AP9971GS 50 100 T j =25 o C 40 PD, Power Dissipation(W) RDS(ON) (mΩ) 80 60 V GS =5V 40 30 20 10 20 V GS =10V 0 0 0 20 40 60 80 0 100 50 100 150 T C , Case Temperature( o C) I D , Drain Current (A) Fig 13. Typ. Drain-Source on State Resistance Fig 14. Total Power Dissipation 2 I D =1mA Normalized BVDSS 1.6 1.2 . 0.8 0.4 0 -100 -50 T 0 j 50 100 150 , Junction Temperature ( o C) Fig 15. Normalized BVDSS v.s. Junction 5 AP9971GS MARKING INFORMATION 9971GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6