AOSMD AOD472A N-channel sdmostm power transistor Datasheet

AOD472A
TM
N-Channel SDMOS POWER Transistor
General Description
Features
VDS (V) = 25V
ID = 55A
RDS(ON) < 5.5mΩ
RDS(ON) < 9.5mΩ
TM
The AOD472A/L is fabricated with SDMOS trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
AOD472A and AOD472AL are electrically identical.
100% UIS Tested!
100% R g Tested!
-RoHS Compliant
-AOD472AL is Halogen Free
TO-252
D-PAK
Top View
D
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
D
Bottom View
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
CurrentG
TC=25°C
Maximum
25
Units
V
±20
V
55
Pulsed Drain Current C
TC=100°C
ID
IDM
100
Pulsed Forward Diode CurrentC
ISM
100
IAR
50
Avalanche Current C
Repetitive avalanche energy L=50uH
C
TC=25°C
Power Dissipation
B
TC=100°C
Power Dissipation
A
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Maximum Junction-to-TAB
B
Alpha & Omega Semiconductor, Ltd.
43
EAR
63
W
25
2.5
PDSM
W
1.6
TJ, TSTG
-55 to 175
Symbol
Steady-State
mJ
50
PD
t ≤ 10s
Steady-State
Steady-State
A
°C
RθJC
Typ
15
41
2.1
Max
20
50
3
Units
°C/W
°C/W
°C/W
RθJC-TAB
2.4
3.4
°C/W
RθJA
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AOD472A
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
50
100
VGS=10V, ID=30A
TJ=125°C
VGS=4.5V, ID=20A
Forward Transconductance
VSD
IS=1A, VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
VDS=5V, ID=30A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Units
V
VDS=25V, VGS=0V
Zero Gate Voltage Drain Current
gFS
Max
25
IDSS
IS
Typ
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=30A
2
µA
nA
2.5
V
A
4.4
5.5
6.6
8.2
7.8
9.5
mΩ
1
V
50
A
mΩ
65
0.7
S
1500
1800
2200
pF
340
445
580
pF
200
285
400
pF
1.1
1.6
2.4
Ω
25
31
40
nC
12
15
20
nC
3.5
4.8
7
nC
6.5
8.9
13
nC
VGS=10V, VDS=12.5V, RL=0.42Ω,
RGEN=3Ω
8
ns
10.4
ns
29
ns
9
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=500A/µs
9.5
12
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
17
21
15
26
ns
nC
2
A: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1 : Nov. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
5V
VDS=5V
4.5V
80
60
7V
ID(A)
ID (A)
60
4V
40
40
20
20
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
0
5
1
12
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
5
2
10
VGS=4.5V
8
6
4
VGS=10V
2
0
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
VGS=10V, 30A
17
5
2
VGS=4.5V, 20A10
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
0
200
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
20
ID=30A
1.0E+01
40
15
1.0E+00
IS (A)
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
VDS=12.5V
ID=30A
2400
Capacitance (pF)
VGS (Volts)
8
6
4
2
1200
Coss
800
Crss
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
35
1000.0
10µs
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
RDS(ON)
limited
10µs
100µs
DC
1m
1.0
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
TJ(Max)=175°C
TC=25°C
160
Power (W)
10.0
5
200
100.0
ID (Amps)
1600
400
0
17
5
2
10
120
80
40
0.1
1
VDS (Volts)
10
100
10
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
Ciss
2000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
40
1
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
70
Power Dissipation (W)
ID(A), Peak Avalanche Current
80
60
TA=100°C
50
TA=150°C
40
30
20
TA=125°C
10
50
40
30
20
10
0
0
0.000001
0.00001
0.0001
0
0.001
25
75
100
125
150
175
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
50
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
20
17
100
5
2
10
10
10
1
1E05
0
0
25
50
75
100
125
150
1E- 0.001 0.01 0.1
1
10
100 1000
0
04
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
100
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
40
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
di/dt=700A/us
125ºC
25
3
16
12
di/dt=700A/us
14
10
125ºC
2.5
12
15
6
125ºC
10
Irm
25ºC
2
0
15
20
25
30
0
0
5
10
20
25
2.5
Is=20A
125ºC
125ºC
4
25ºC
2
10
125º
25ºC
Irm
0
100
200
300
400
500
600
700
0
800
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
1
S
10
0
1.5
trr
trr (ns)
6
2
15
Irm (A)
25ºC
5
30
20
8
Qrr
15
IB (A)
Figure 18: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
10
Is=20A
0.5
25ºC
125ºC
20
Qrr (nC)
S
0
30
IB (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
15
1
S
10
1.5
125ºC
2
0
5
25ºC
8
4
5
25
trr
6
4
0
2
10
S
25ºC
trr (ns)
8
Qrr
Irm (A)
Qrr (nC)
20
5
25ºC
0.5
0
0
100
200
300
400
500
600
700
0
800
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
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AOD472A
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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