PD - 94076
IRG4BC20W-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
VCES = 600V
VCE(on) typ. = 2.16V
G
@VGE = 15V, IC = 6.5A
E
N-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
D2Pak
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
13
6.5
52
52
± 20
200
60
24
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
1.44
2.1
–––
40
–––
Units
°C/W
g (oz)
1
5/24/00
IRG4BC20W-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.48 —
V/°C VGE = 0V, IC = 1.0mA
— 2.16 2.6
IC = 6.5A
VGE = 15V
Collector-to-Emitter Saturation Voltage
— 2.55 —
IC = 13A
See Fig.2, 5
V
— 2.05 —
IC = 6.5A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-8.8
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
5.5
8.3
—
S
VCE = 100 V, IC = 6.5A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
26
38
IC = 6.5A
3.7 5.5
nC
VCC = 400V
See Fig.8
10
15
VGE = 15V
22
—
14
—
TJ = 25°C
ns
110 160
IC = 6.5A, VCC = 480V
64
96
VGE = 15V, RG = 50Ω
0.06 —
Energy losses include "tail"
0.08 —
mJ See Fig. 9, 10, 14
0.14 0.2
21
—
TJ = 150°C,
15
—
IC = 6.5A, VCC = 480V
ns
150
—
VGE = 15V, RG = 50Ω
150
—
Energy losses include "tail"
0.34 —
mJ See Fig. 10, 11, 14
7.5
—
nH
Measured 5mm from package
490
—
VGE = 0V
38
—
pF
VCC = 30V
See Fig. 7
8.8
—
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. (See Fig. 13b)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
Pulse width 5.0µs, single shot.
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC20W-S
25
F o r b o th :
T ria n g u la r w a ve :
D uty c yc le: 50%
TJ = 125° C
Ts ink = 90°C
G ate drive as spec ified
20
C la m p vo l ta g e :
8 0 % o f ra te d
Load Current ( A )
P o w e r D is s ip a tio n = 1 3 W
15
S q u a re wave :
6 0 % o f ra te d
v o lta g e
10
5
Id e al d io de s
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
TJ = 150 °C
TJ = 25 °C
V GE = 15V
20µs PULSE WIDTH
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
9
10
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20W-S
14
VCE , Collector-to-Emitter Voltage(V)
3.0
Maximum DC Collector Current(A)
12
10
8
6
4
2
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
I C = 13 A
I C = 6.5 A
2.0
I C =3.25 A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20W-S
1000
600
VGE , Gate-to-Emitter Voltage (V)
800
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
400
Coes
200
Cres
0
1
10
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
0.14
0.13
0.12
10
20
30
40
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 °C
I C = 6.5A
0
5
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.15
VCC = 400V
I C = 6.5A
50
50 Ω
RG = Ohm
VGE = 15V
VCC = 480V
1
IC = 13 A
IC = 6.5 A
IC = 3.25 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20W-S
RG
TJ
VCC
VGE
100
Ω
= 50
Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
0.8
0.6
0.4
0.2
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
0.0
1
0
2
4
6
8
10
12
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
14
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC20W-S
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X I C@25°C
480µF
960V
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90 %
10 %
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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IRG4BC20W-S
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
3
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
3X
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRG4BC20W-S
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F EE D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TRL
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 )
1 2.8 0 (.5 04 )
2 7 .4 0 (1 .0 79 )
2 3 .9 0 (.9 4 1)
4
3 3 0 .0 0
(1 4 .1 7 3)
M A X.
6 0 .0 0 (2 .3 6 2)
M IN .
N OT ES :
1. C O M F O R M S T O E IA -4 1 8 .
2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
2 6 .4 0 (1 .0 3 9 )
2 4 .4 0 (.9 6 1 )
3
3 0 .4 0 (1 .1 97 )
M AX .
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
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