IRF IRHY593230CM Radiation hardened power mosfet thru-hole (to-257aa) Datasheet

PD - 94319B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY597230CM
200V, P-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number
Radiation Level RDS(on) ID
IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A
IRHY593230CM 300K Rads (Si)
0.515Ω -8.0A
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
T0-257AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-8.0
-5.0
-32
75
0.6
±20
80
-8.0
7.5
-12
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
For footnotes refer to the last page
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1
01/30/03
IRHY597230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-200
—
—
V
—
-0.25
—
V/°C
—
—
0.515
Ω
-2.0
5.1
—
—
—
—
—
—
-4.0
—
-10
-25
V
S( )
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -5.0A
➃
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -5.0A ➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -8.0A
VDS = -100V
Ω
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
40
12
15
25
30
50
105
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1340
190
20
—
—
—
nA
nC
VDD = -100V, ID = -8.0A,
VGS =-12V, RG = 7.5Ω,
ns
nH
pF
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-8.0
-32
-5.0
200
1.2
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -8.0A, VGS = 0V ➃
Tj = 25°C, IF =-8.0A, di/dt ≤ -100A/µs
VDD ≤ -25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY597230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-257AA)
Diode Forward Voltage ➃
100K Rads(Si)1
Min
Max
300KRads(Si)2
Min
Max
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.505
-200
-2.0
—
—
—
—
—
-5.0
-100
100
-10
0.505
nA
—
0.515
—
0.515
Ω
—
-5.0
—
-5.0
Test Conditions
Units
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS =-160V, VGS =0V
VGS = -12V, ID =-5.0A
V
µA
Ω
VGS = -12V, I D =-5.0A
V
VGS = 0V, IS = -8.0A
1. Part number IRHY597230CM
2. Part number IRHY593230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
-250
VDS
-200
Br
-150
I
-100
Au
-50
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY597230CM
Pre-Irradiation
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-5.0V
1
20µs PULSE WIDTH
T = 25 C
1
-5.0V
1
20µs PULSE WIDTH
T = 150 C
10
100
°
J
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
TJ = 25 ° C
TJ = 150 ° C
10
5.0
15
V DS = -50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
100
4
10
°
J
0.1
0.1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -8A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
Ciss
1200
800
Coss
400
C
rss
20
-VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHY597230CM
0
1
10
ID = -8.0A
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
100
-I D , Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
4.0
5.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
3.0
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
2.0
VDS =-100V
16
-VDS , Drain-to-Source Voltage (V)
0.1
1.0
6.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µs
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY597230CM
Pre-Irradiation
8.0
RD
VDS
-ID , Drain Current (A)
VGS
D.U.T.
RG
6.0
-
V DD
+
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY597230CM
L
-
D .U .T
RG
+
IA S
VGS
-2
0V
tp
160
VVDD
DD
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-3.6A
-5.1A
BOTTOM -8.0A
TOP
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
-12V
12V
.2µF
.3µF
-12 V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY597230CM
Pre-Irradiation
Footnotes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -50V, starting TJ = 25°C, L=2.5 mH
Peak IL = -8.0A, VGS = -12V
➂ ISD ≤ -8.0A, di/dt ≤ -340A/µs,
VDD ≤ -200V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
5.08 [.200]
4.83 [.190]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
10.92 [.430]
10.42 [.410]
1
2
1.14 [.045]
0.89 [.035]
B
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOT ES :
1.
2.
3.
4.
DIME NS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
P IN AS S IGN ME N T S
1 = GATE
2 = DRAIN
3 = S OURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/03
8
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