BY133 THRU EM520 1.0AMP. HIGH VOLTAGE SILICON RECTIFIER DO-41 FEATURE .High current capability .Low forward voltage drop .Low power loss, high efficiency .High surge capability .High voltage .High temperature soldering guaranteed 260°C /10sec/ 0.375" lead length at 5 lbs tension .787(20.0) M IN. .107(2.7) DIA. .080(2.0) + .205(5.2) .166(4.2) MECHANICAL DATA .Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C .Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy .Polarity: color band denotes cathode .Mounting position: any .032(0.8) DIA. .025(0.65) .787(20.0) M IN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20% Type Number SYMBOL BY133 EM513 EM516 EM520 units Maximum Recurrent Peak Reverse Voltage VRRM 1300 1600 1800 2000 V Maximum RMS Voltage VRMS 910 1120 1260 1400 V Maximum DC blocking Voltage VDC 1300 1600 1800 2000 V Maximum Average Forward Rectified Current .375"(9.5mm) lead length at TA =55°C IF(AV) 1.0 A IFSM 30 A VF 1.1 V Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC Maximum DC Reverse Current at rated DC blocking voltage 5.0 @TA =25°C @TA =100°C Maximum Full Load Reverse Current Average, 500 IR µA 30 Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note1) CJ 15 pF Typical Thermal Resistance (Note 2) R(JA) 75 °C/W Storage Temperature Range TSTG -55 to +150 °C TJ -55 to +150 °C Operation Temperature Range Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C. Board Mounted. - 235 -