DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 26 2000 Nov 15 NXP Semiconductors Product data sheet BC856T; BC857T series PNP general purpose transistors FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification, especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 (SOT416) plastic package. NPN complements: BC846T; BC847T series. handbook, halfpage 3 3 1 MARKING 1 TYPE NUMBER MARKING CODE BC856AT 3A BC856BT 3B BC857AT 3E BC857BT 3F BC857CT 3G 2 2 Top view Fig.1 MAM362 Simplified outline (SC-75; SOT416) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC856AT; BC856BT − −80 V BC857AT; BC857BT; BC857CT − −50 V BC856AT; BC856BT − −65 V BC857AT; BC857BT; BC857CT − −45 V collector-emitter voltage open base VEBO emitter-base voltage − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2 NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 833 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −30 V; IE = 0 MAX. UNIT − − −15 nA − − −5 μA − − −100 nA BC856AT; BC857AT 125 − 250 BC856BT; BC857BT 220 − 475 emitter cut-off current VEB = −5 V; IC = 0 hFE DC current gain VCE = −5 V; IC = −2 mA 420 − 800 collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −200 mV IC = −100 mA; IB = −5 mA; note 1 − − −400 mV base-emitter voltage IC = −2 mA; VCE = −5 V −580 − −700 mV IC = −10 mA; VCE = −5 V − − −770 mV BC857CT VBE TYP. VCB = −30 V; IE = 0; Tj = 150 °C IEBO VCEsat MIN. Cc collector capacitance VCB = −10 V; f = 1 MHz; IE = ie = 0 − − 2.5 pF Ce emitter capacitance VEB = −0.5 V; f = 1 MHz; IC = ic = 0 − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2000 Nov 15 3 NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857AT MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) Fig.3 Fig.2 DC current gain; typical values. MGT713 VCEsat (mV) −103 −800 MGT714 (1) (2) (3) −400 (1) −200 (3) (2) −1 −10 0 −10−1 −102 −103 I C (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 −102 −103 I C (mA) handbook, halfpage −600 −10 −10−1 −10 Base-emitter voltage as a function of collector current; typical values. −1200 VBEsat (mV) −1000 −102 −1 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −104 handbook, halfpage −10−1 4 −1 −10 −102 −103 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857BT MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 −1 −10 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.7 Fig.6 DC current gain; typical values. MGT717 −104 handbook, halfpage (3) −102 −103 I C (mA) Base-emitter voltage as a function of collector current; typical values. VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 MGT718 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 5 −1 −10 −102 −103 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857CT MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 −800 (1) 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 −10−2 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −10 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −102 −103 I C (mA) Fig.11 Base-emitter voltage as a function of collector current; typical values. Fig.10 DC current gain; typical values. MGT721 −104 handbook, halfpage −1 VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 MGT722 handbook, halfpage (1) (2) −600 (3) −102 −400 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 6 NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2000 Nov 15 REFERENCES IEC JEDEC EIAJ SC-75 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2000 Nov 15 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp9 Date of release: 2000 Nov 15 Document order number: 9397 750 07525