MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0186, Rev. - Green Products MBR20..CT/MBRB20..CT/MBR20..CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR20..CT TO-220AB Case styles MBRB20..CT D2PAK Mechanical Dimensions: In Inches / mm MBR20..CT-1 TO-262 TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0186, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 D2PAK Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 4.85 0.25 2.89 0.96 15.6 2.70 1.40 2.20 8° TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0186, Rev. - Green Products Marking Diagram: Where XX is Reverse Voltage Where XXXXX is YYWWL MBR B 20 XX CT/CT-1 SSG YY WW L MBR20XXCT = Device Type = Package type = Forward Current (20A) = Reverse Voltage (35/45V) = Configuration = SSG = Year = Week = Lot Number MBRB20XXCT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR20XXCT MBRB20XXCT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. 35 Peak Inverse Voltage VRWM 45 MBR2035CT MBRB2035CT MBR2035CT-1 MBR2045CT MBRB2045CT MBR2045CT-1 Units V Max. Average Forward IF(AV) 50% duty cycle @TC = 95°C, rectangular wave form 20 A Max. Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 200 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0186, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current (per leg)* Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change * CT dv/dt Condition @ 10A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz - Condition - Max. 0.70 0.60 Units V V 1.0 mA 15 mA 600 pF 10,000 V/μs Specification -55 to +150 -55 to +150 Units °C °C 2.0 °C/W Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt DC operation 2 TO-220AB /D²PAK/TO-262 g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 SANGDEST MICROELECTRONICS Green Products 100 Reverse Current-IR(MA) 10000 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 10 TJ=125℃ 1 0.1 0.01 TJ=25℃ 0.001 40 10 20 30 Reverse Voltage-VR(V) 40 50 60 70 80 90 Reverse Voltage-VR(%) Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance Instantaneous Forward Current-IF(A) Junction Capacitance-CT(PF) Technical Data Data Sheet N0186, Rev. - 100 TJ=125℃ 10 TJ=25℃ 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0186, Rev. - MBR2035/2045CT MBRB2035/2045CT MBR2035/2045CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •