IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application • High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Application • Strobe Flash C C C C C E E G E G 8-SOP Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL E TC = 25°C unless otherrwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering PurPoses from case for 5 secnds @ Ta = 25°C FGS15N40L 400 ±6 130 2.0 -40 to +150 -40 to +150 Units V V A W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient(PCB Mount) Typ. -- Max. 62.5 Units °C/W Notes: Mounted on 1” square PCB(FR4 or G-10 Material) ©2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1 FGS15N40L September 2001 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 --- ---- -10 ± 0.1 V µA µA IC = 0V, IC = 1mA IC = 130A , VGE = 4.0V 2.0 4.5 1.4 8.0 V V VGE = 0V , VCE = 30V f = 1MHz ---- 3800 45 30 ---- pF pF pF VCC = 300V , IC = 130A VGE = 4.0V , RG = 15Ω * Resistive Load ----- 0.15 1.5 0.15 1.5 --0.3 3.0 us us us us Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E leakage Current On Characteristics VGE(th) VCE(sat) G-E threshold Voltage C-E Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes : Recommendation of Rg Value : Rg ≥ 15Ω ©2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1 FGS15N40L Electrical Characteristics of IGBT T Collector-Emitter Voltage, Vce[v] 4V Collector Current, I C [A] 120 VGE = 3V 90 60 30 0 0 Common Emitter VGE=4.0V 5V 150 2 4 6 6 Ic=130A 5 4 Ic=100A 3 Ic=70A 2 8 -50 0 Collector-Emitter Voltage, VCE [V] 8 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] 10 6 130A 100A IC=70A 2 0 Common Emitter TC=25℃ 8 6 130A 4 100A IC=70A 2 1 2 3 4 5 6 0 Gate-Emitter Voltage ,VGE [V] 1 2 3 4 5 6 Gate-Emitter Voltage ,VGE [V] Fig 3. Saturation Voltage vs. VGE Fig 4. Saturation Voltage vs. VGE 10000 Common Emitter TC=150℃ Cies 8 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 150 0 0 10 100 Fig 2. Saturation Voltage vs. Case Temerature at Variant Current Level Common Emitter T C=-40℃ 4 50 Case Temperature,TC [℃] Fig 1. Typical Output Chacracteristics 10 FGS15N40L 7 6V Commom Emitter TC = 25℃ 180 6 130A 4 100A 1000 Common Emitter VGE=0V f=1MHz T C=25℃ 100 Coes IC=70A 2 Cres 10 0 0 1 2 3 4 Gate-Emitter Voltage ,V GE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 5 6 0 10 20 30 40 Collector-Emitter Voltage,VCE [V] Fig 6. Capacitance Characteristics FGS15N40L Rev. A1 FGS15N40L 200 Collector Peak Current, I CP [A] 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] Fig 7. Collector Current Limit Vs Gate - Emitter Voltage Limit ©2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1 FGS15N40L Package Dimension 8-SOP MIN #5 1.80 MAX 0.071 3.95 ±0.20 0.156 ±0.008 5.72 0.225 0~ 8° +0.10 0.15 -0.05 +0.004 0.006 -0.002 MAX0.10 MAX0.004 6.00 ±0.30 0.236 ±0.012 0.41 ±0.10 0.016 ±0.004 #4 1.27 0.050 #8 5.13 MAX 0.202 #1 4.92 ±0.20 0.194 ±0.008 ( 0.56 ) 0.022 1.55 ±0.20 0.061 ±0.008 0.1~0.25 0.004~0.001 0.50 ±0.20 0.020 ±0.008 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4