HDSEMI MMSZ5241B Sod-123 plastic-encapsulate diode Datasheet

MMSZ5221B-MMSZ5259B
SOD1 23 Plastic-Encapsulate Diodes
Zener Diodes
Features
●Pd
●Vz
SOD1 23
350mW
2.4V- 39V
Applications
● Stabilizing Voltage
Limiting Values (Absolute Maximum Rating)
Unit
Pd
mW
Zener current
IZ
mA
PV /VZ
Maximum junction temperature
Tj
℃
150
Tstg
℃
-65 to +150
Power dissipation (Note1)
Storage temperature range
Conditions
Max
Symbol
Item
T L=75℃
350
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Symbol
Thermal resistance
RθJL
Forward voltage
VF
(Note2)
Unit
Conditions
Max
℃/W
Between junction and lead
357
V
IF =10mA
0.9
Notes:1. Device mounted on ceramic PCB; 7.6 mm x 9.4 mm x 0.87 mm with pad areas 25 mm2.
2. Tested with pulses, Tp≤1.0ms.
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Type
Number
Maximum Zener Impedance
Zener Voltage Range (Note 2)
(Note 4)
Code
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
mA
ZZT@IZT
ZZK@IZK
Ω
Maximum
Reverse
Current
IZK
IR
VR
mA
uA
V
MMSZ5221B
C1
2.4
2.28
2.52
20
30
1200
0.25
100
1.0
MMSZ5223B
C3
2.7
2.57
2.84
20
30
1300
0.25
75
1.0
MMSZ5225B
C5
3.0
2.85
3.15
20
30
1600
0.25
50
1.0
MMSZ5226B
G1
3.3
3.14
3.47
20
28
1600
0.25
25
1.0
MMSZ5227B
G2
3.6
3.42
3.78
20
24
1700
0.25
15
1.0
MMSZ5228B
G3
3.9
3.71
4.10
20
23
1900
0.25
10
1.0
MMSZ5229B
G4
4.3
4.09
4.52
20
22
2000
0.25
5
1.0
MMSZ5230B
G5
4.7
4.47
4.94
20
19
1900
0.25
5
2.0
MMSZ5231B
E1
5.1
4.85
5.36
20
17
1600
0.25
5
2.0
MMSZ5232B
E2
5.6
5.32
5.88
20
11
1600
0.25
5
3.0
MMSZ5233B
E3
6.0
5.70
6.30
20
7
1600
0.25
5
3.5
MMSZ5234B
E4
6.2
5.89
6.51
20
7
1000
0.25
5
4.0
MMSZ5235B
E5
6.8
6.46
7.14
20
5
750
0.25
3
5.0
MMSZ5236B
F1
7.5
7.13
7.88
20
6
500
0.25
3
6.0
MMSZ5237B
F2
8.2
7.79
8.61
20
8
500
0.25
3
6.5
MMSZ5238B
F3
8.7
8.27
9.14
20
8
600
0.25
3
6.5
MMSZ5239B
F4
9.1
8.65
9.56
20
10
600
0.25
3
7.0
MMSZ5240B
F5
10
9.50
10.50
20
17
600
0.25
3
8.0
MMSZ5241B
H1
11
10.45
11.55
20
22
600
0.25
2.0
8.4
MMSZ5242B
H2
12
11.40
12.60
20
30
600
0.25
1.0
9.1
MMSZ5243B
H3
13
12.35
13.65
9.5
13
600
0.25
0.5
9.9
MMSZ5244B
H4
14
13.30
14.70
9.0
15
600
0.25
0.1
10
MMSZ5245B
H5
15
14.25
15.75
8.5
16
600
0.25
0.1
11
MMSZ5246B
J1
16
15.20
16.80
7.8
17
600
0.25
0.1
12
MMSZ5248B
J3
18
17.10
18.90
7.0
21
600
0.25
0.1
14
MMSZ5250B
J5
20
19.00
21.00
6.2
25
600
0.25
0.1
15
MMSZ5251B
K1
22
20.90
23.10
5.6
29
600
0.25
0.1
17
MMSZ5252B
K2
24
22.80
25.20
5.2
33
600
0.25
0.1
18
MMSZ5253B
K3
25
23.75
26.25
5.0
35
600
0.25
0.1
19
MMSZ5254B
K4
27
25.65
28.35
5.0
41
600
0.25
0.1
21
MMSZ5255B
K5
28
26.60
29.40
4.5
44
600
0.25
0.1
21
MMSZ5256B
M1
30
28.50
31.50
4.2
49
600
0.25
0.1
23
MMSZ5257B
M2
33
31.35
34.65
3.8
58
700
0.25
0.1
25
MMSZ5258B
M3
36
34.20
37.80
3.4
70
700
0.25
0.1
27
MMSZ5259B
M4
39
37.05
40.95
3.2
80
800
0.25
0.1
30
High Diode Semiconductor
2
Typical Characteristics
Zener Characteristics(VZ Up to 10 V)
Pulsed
10
1
0.5
PD =350mW
39
36
33
28
30
25
27
22
20
1
1
2
3
4
5
6
7
8
9
10
0.5
10
11
15
20
VZ, ZENER VOLTAGE (V)
25
30
35
40
Typical Leakage Current
100
Pulsed
TYPICAL Ta VALUES
35
45
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
40
FOR MMSZ52XXB SERIES
10
30
IR, LEAKAGE CURRENT (uA)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
24
10
11
12
13
14
15
16
9.1
8.7
8.2
7.5
6.2
6.8
5.1
5.6
6.0
4.3
4.7
10
3.0
IZ, ZENER CURRENT (mA)
Ta =25℃
PD =350mW
Pulsed
18
Ta =25℃
Zener Characteristics(11 V to 39 V)
100
IZ, ZENER CURRENT (mA)
100
25
20
VZ @ IZT
15
10
5
1
0.1
0.01
Ta=100℃
1E-3
0
Ta=25℃
-5
1E-4
0
4
8
12
16
20
24
28
32
36
40
44
0
5
10
VZ, NOMINAL ZENER VOLTAGE (V)
20
25
40
45
Ta=25℃
f=1MHz
1000
ZZT, DYNAMIC IMPEDANCE(Ω)
C, CAPACITANCE (pF)
35
3000
Ta=25℃
100
30
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
15
VZ, NOMINAL ZENER VOLTAGE (V)
0V BIAS
1V BIAS
10
BIAS AT
50% OF VZ NOM
1
IZ(AC)=0.1IZ(DC)
IZ=0.25mA
f=1kHz
100
IZT
10
1
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
400
300
POWER DISSIPATION
PD
(mW)
350
250
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
High Diode Semiconductor
3
SOD-1 23 Package Outline Dimensions
SOD-1 23 Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOD123
1.50
High Diode Semiconductor
5
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