HSMC HI42C Pnp epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HI42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI42C is designed for use in general purpose amplifier, low
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -6 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-100
-100
-5
30
15
3
Typ.
-
Max.
-10
-50
-500
-1.5
-2
75
-
Unit
V
V
V
uA
uA
uA
V
V
MHz
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IC=-100uA, IC=0
VCE=-100V, VEB=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-6A, IB=-600mA
VCE=-4V, IC=-6A
VCE=-4V, IC=-300mA
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE9013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
Saturation Voltage (mV)
10000
100
hFE
hFE @ VCE=4V
10
1000
VBE(sat) @ IC=8IB
100
VCE(sat) @ IC=8IB
1
10
1
10
100
1000
10000
1
10
100
Collector Current (mA)
1000
10000
Collector Current (mA)
On Voltage & Collector Current
Switching Time & Collector Current
10.00
1000
VCC=30V, IC=10IB1 =-10IB2
On Voltage (mV)
Switching Times (us)
VBE(on) @ VCE=4V
100
1.00
Ton
Tstg
0.10
Tf
0.01
1
10
100
1000
10000
0.1
1.0
10.0
Collector Current (A)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
Safe Operating Area
1000
100000
PT=1ms
Collector Current-IC (mA)
Capacitance (pF)
10000
100
Cob
PT=100ms
PT=1s
1000
100
10
10
1
0.1
1
10
Reverse-Biased Voltage (V)
100
1
10
100
Forward Voltage-V CE (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE9013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 3/3
MICROELECTRONICS CORP.
TO-251 Dimension
A
B
Marking :
C
HSMC Logo
D
Product Series
Part Number
Date Code
Rank
Ink Mark
F
G
Style : Pin 1.Base 2.Collector 3.Emitter
3
I
K
E
H
2
1
J
3-Lead TO-251 Plastic Package
HSMC Package Code : I
*:Typical
Inches
Min.
Max.
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0354
0.0315
0.2047 0.2165
Millimeters
Min.
Max.
6.50
*4.60
0.90
0.80
5.20
5.50
Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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