Addendum for PCN 2004-018-A BTS 5240 G Addendum for PCN-Datasheet 2004-018-A: BTS 5240 G This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004. There are the following changes in the datasheet (on page 7): Old: Current limit adjustment threshold voltage Symbol VCLA(T-) min 2.6 - typ - max 3.6 Unit V Symbol VCLA(T-) min 2.0 - typ - max 4.0 Unit V New: Current limit adjustment threshold voltage PCN 2004-018-A: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb(on) 4,5...28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9 8,4 A Current limitation Low IL(SCr) High 10 P-DSO-20-1, -6, -7, -9, -14, -15 A 40 General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions. • Extern adjustable current limitation. Application • • • • All types of resistive, inductive and capacitive loads µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions Block Diagram • Very low standby current • CMOS compatible input • Improved electromagnetic compatibility (EMC) • Stable behaviour at low battery voltage Vbb IN1 Protection Functions Logic Channel 1 Channel 2 IS1 • Reverse battery protection with external resistor • Short circuit protection • Overload protection • Current limitation • Thermal Shutdown • Overvoltage protection with external resistor • Loss of GND and loss of Vbb protection • Electrostatic discharge Protection (ESD) IN2 IS2 Load 1 Load 2 CLA GND Diagnostic Function: IntelliSense • Proportional load current sense ( with defined fault signal during thermal shutdown and overload ) • Additional open load detection in OFF - state • Suppressed thermal toggling of fault signal Page 1 2004-Mar-08 PCN 2004-018-A: BTS 5240G Functional diagram GND gate control + charge pump overvoltage protection internal voltage supply logic current limit clamp for inductive load OUT1 temperature sensor IN1 ESD Vbb openload detection IS1 LOAD current sense Channel 1 CLA IN2 IS2 control and protection circuit equivalent to channel 2 OUT2 Page 2 2004-Mar-08 PCN 2004-018-A: BTS 5240G Pin definition and function Pin Symbol Function 4 IN1 Input 1,2 activates channel1,2 in case of logic high signal 7 IN2 5 IS1 Diagnostic feedback 1 & 2 of channel 1,2 On state: advanced current sense with defined signal in case 6 IS2 of overload or short circuit Off state: High on failure 3 GND 1/2 Ground of chip 1,10, Vbb Positive power supply voltage. Design the wiring for the 11,15, simultaneous max. short circuit currents from channel 1 to 2 and 16,20 also for low thermal resistance 8 CLA Current limit adjust, the current limit for both channels can be chosen as high ( potential < 2,6V ) or low ( potential > 3,6V ). 17,18,19 OUT1 Output 1,2 protected high-side power output of channel 1,2. 12,13,14 OUT2 Design the wiring for the max. short circuit current. 2,9 N.C. Not connected Pin configuration (top view) Vbb 1 N.C. GND ½ IN1 IS1 IS2 IN2 CLA ½ N.C. Vbb • 2 3 4 5 6 7 8 9 10 20 Vbb 19 18 17 16 15 14 13 12 11 OUT1 OUT1 OUT1 Vbb Vbb OUT2 OUT2 OUT2 Vbb Page 3 2004-Mar-08 PCN 2004-018-A: BTS 5240G Maximum Ratings at Tj=25°C, unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 6) Vbb Supply voltage for full short circuit protection; T j = -40...150°C Vbb(SC) Maximum voltage across DMOS VON Load dump protection 3) VLoadDump4) = VA + VS; VA = 13,5 V In = low or high; td = 400 ms; RI4) = 2 Ω Value 281) Unit V 282) 52 VLoaddump RL = 2.25 Ω 40 RL = 6.8 Ω 53 IL(lim)5) Load current (Short - circuit current, see page 7) IL Operating temperature range Tj -40...+150 °C Storage temperature range Tstg -55...+150 Dynamical temperature rise at switching dT 60 K Ptot 1,4 W Power dissipation6) (DC), one channel active TA = 85 °C Maximal switchable inductance, single pulse Vbb=12V, T jstart=150°C; mH ZL(s) (see diagrams on page 12) IL = 6 A, EAS = 0.319 J, RL = 0 Ω, IL = 12 A, EAS = 0.679 J, RL = 0 Ω, one channel: 9.8 two parallel channels: 5.2 Electrostatic discharge voltage IN: VESD IS: (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT: 1.0 4.0 VIN -10...16 Voltage at current limit adjustment pin VCLA -10...16 Current limit adjustment current I CLA ±5.0 Current through input pin (DC) I IN ±5.0 I IS -5...10 (see page 11) kV 2.0 Continuous input voltage Current through sense (DC) A V mA 118...28 V for 100 hours 2only single pulse, R = 200 mΩ ; L = 8 µH ; R and L are describing the complete circuit impedance including L line, contact and generator impedances. 3Supply voltage higher than V bb(AZ) require an external current limit for the GND (150Ω resistor) and sense pin. 4R = internal resistance of the load dump test pulse generator. I 5Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 6Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. Page 4 2004-Mar-08 PCN 2004-018-A: BTS 5240G Electrical Characteristics Parameter and Conditions, each of the two channels Symbol at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified Values Unit min. typ. max. RthJS - 18 - K/W one channel active: RthJA - 44 - K/W Thermal Resistance junction - soldering point junction - ambient1) each channel: all channels active: 42 Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT), (see page 13) RON mΩ Tj = 25 °C, IL = 5 A, each channel: - 21 25 Tj = 150 °C, each channel: - 42 50 two parallel channels: - 11 13 Tj = 25 °C, Nominal load current1) Ta = 85°C, Tj ≤ 150°C , A I L(nom) one channel active: 5.4 5.9 - two channels active, per channel: 3.9 4.2 - Output voltage drop limitation at small load currents VON(NL) IL = 0.5 A - 40 - mV Output current while GND disconnected 2) - - 2 mA I L(GNDhigh) ( see diagram page 12 ) VIN = 0 V 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2not subject to production test, specified by design Page 5 2004-Mar-08 PCN 2004-018-A: BTS 5240G Electrical Characteristics Parameter and Conditions, each of the two channels Symbol at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified Values Unit min. typ. max. ton - 90 200 toff - 100 220 dV/dton 0.1 0.25 0.45 V/µs -dV/dtoff 0.09 0.25 0.4 Operating voltage2) Vbb(on) 4.5 - 28 Overvoltage protection3) Vbb(AZ) 41 47 52 Load Switching Capabilities and Characteristics Turn-on time1) to 90% VOUT µs RL = 12 Ω, V bb = 12 V Turn-off time 1) to 10% VOUT RL = 12 Ω, V bb = 12 V Slew rate on 1) 10 to 30% VOUT , RL = 12 Ω, V bb = 12 V Slew rate off 1) 70 to 40% VOUT , RL = 12 Ω, V bb = 12 V Operating Parameters V Ibb = 40 mA Standby current 4) µA I bb(off) (see diagram on page 13) Tj = -40...+25 °C, VIN = 0 V - 5 7.5 Tj = 150 °C - - 20 1See timing diagram on page 14. 218V...28V for 100 hours 3Supply voltages higher than V bb(AZ) require an external current limit for the status pin and GND pin (e.g. 150Ω). See also VOut(CL) in table of protection functions and circuit diagram on page 11. 4Measured with load; for the whole device; all channels off. Page 6 2004-Mar-08 PCN 2004-018-A: BTS 5240G Electrical Characteristics Parameter and Conditions, each of the two channels Symbol at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified Values Unit min. typ. max. IL(off) - 1.5 8 µA IGND - 1.6 4 mA Operating Parameters Off-State output current (included in Ibb(off) ) VIN = 0 V, each channel Operating current 1) VIN = 5 V, per active channel Protection Functions2) Current limit, ( see timing diagrams, page 15 ) A I L(LIM) Low level; if potential at CLA = high 7 11 14 High level; if potential at CLA = low 40 50 60 VCLA(T-) 2.0 - - VCLA(T+) - - 4.0 Current limit adjustment threshold voltage Repetitive short circuit current limit V A I L(SCr) Tj = Tjt (see timing diagrams on page 15) High level one active channel: - 40 - two active channels 3): - 40 - one active channel: - 7 - two active channels 3): - 7 - - 3.5 - - 0.75 - - -15 - V Low level Initial short circuit shutdown time low level: Tj,start = 25°C ; Vbb = 13,5 V high level: Output clamp (inductive load switch off) 4) t off(SC) VOUT(CL) ms IL = 40 mA Thermal overload trip temperature T jt 150 170 - °C Thermal hysteresis ∆Tjt - 10 - K 1Add I , if I > 0 IS IS 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3At the beginning of the short circuit the double current is possible for a short time. 4If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VOUT(CL) . Page 7 2004-Mar-08 PCN 2004-018-A: BTS 5240G Electrical Characteristics Parameter and Conditions, each of the two channels Symbol at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified Values Unit min. typ. max. Diagnostic Characteristics Open load detection voltage VOUT(OL) 2 3.2 4.4 V Internal output pull down1) ROUT(PD) 11 23 35 kΩ 4640 4900 4900 5800 5400 5350 6960 5900 5800 VOUT = 13.5 V Current sense ratio, static on-condition kILIS = IL :IIS IL = 0.5 A IL = 3 A IL = 6 A kILIS Sense signal in case of fault-conditions 2) Vfault 5 6.2 7.5 Current saturation of sense fault signal I fault 4 - - mA Sense signal delay after thermal shutdown3) t delay(fault) - - 1.2 ms Current sense output voltage limitation VIS(lim) 5.4 6.5 7.3 V I IS(LH) - - 5 µA t son(IS) - - 400 µs t slc(IS) - - 300 V in off-state IIS = 0 , IL = 5 A Current sense leakage/offset current VIN = 5 V, IL = 0 , VIS = 0 Current sense settling time to IIS static ±10% after positive input slope 4) , IL = 0 to 5A Current sense settling time to IIS static ±10% after change of load current4) , IL = 2.5 to 5A 1In case of floating output, the status doesn´t show open load. 2Fault condition means output voltage exceeds open load detection voltage V OUT(OL) 3In the case of thermal shutdown the V fault signal remains for t delay(fault) longer than the restart of the switch ( see diagram on page 16 ). 4not subject to production test, specified by design Page 8 2004-Mar-08 PCN 2004-018-A: BTS 5240G Electrical Characteristics Parameter Symbol at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified Values Unit min. typ. max. Diagnostic Characteristics Status invalid after negative input slope td(SToff) - - 1.2 ms Status invalid after positive input slope td(STOL) - - 20 µs 2.0 3.5 5.5 kΩ V with open load Input Feedback1) Input resistance (see circuit page 11) RI Input turn-on threshold voltage VIN(T+) - - 2.4 Input turn-off threshold voltage VIN(T-) 1.0 - - Input threshold hysteresis ∆V IN(T) - 0.5 - Off state input current I IN(off) 3 - 40 I IN(on) 20 50 90 Reverse battery -Vbb - - 27 Drain-source diode voltage (VOUT > Vbb) -VON - 330 - µA VIN = 0.4 V On state input current VIN = 5 V Reverse Battery2) V mV Tj = 150 °C, Ibb = -10 mA 1If ground resistors R GND are used, add the voltage drop across these resistor. 2Requires a 150Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and status currents have to be limited. (see max. ratings page 4) Page 9 2004-Mar-08 PCN 2004-018-A: BTS 5240G Truth Table - for each of the two channels Input Output Diagnostic level level output Normal L L Z 1) Operation H Vbb I IS = IL / kilis H Vbb Vfault Short circuit L L Z1) to GND H L Vfault Overtemperature L L Z1) H L Vfault Short circuit L Vbb Vfault to Vbb H Vbb Open load L >Vout(OL) < IIS = IL / kilis3) Vfault H Vbb Z1) Current Limitation 2) L = " Low" Level Z = high impedance, potential depends on external circuit H = "High" Level Vfault = 5V typ., constant voltage independent of external sense resistor. Parallel switching of channels is possible by connecting the inputs and outputs parallel. The current sense ouputs have to be connected with a single sense resistor. Terms Ibb V 1,10,11 bb I IN1 I IN2 I IS1 V V IN1 IN2 I IS2 V V IS1 IS2 4 7 5 6 8 IN1 IN2 IS1 15,16,20 Vbb OUT1 PROFET OUT2 IS2 CLA V CLA 17 18 V ON1 V ON2 I L1 19 I L2 12 13 14 GND 3 V OUT1 V OUT2 I GND Leadframe ( Vbb ) is connected to pin 1,10,11,15,16,20 1L-potential by using a sense resistor 2Current limitation is only possible while the device is switched on. 3Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS Page 10 2004-Mar-08 PCN 2004-018-A: BTS 5240G Input circuit ( ESD protection ), IN1 or IN2 R IN I Inductive and overvoltage output clamp, OUT1 or OUT2 +Vbb V Z ESD-ZD I I I OUT GND V OUT The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. GND V OUT clamped to VOUT(CL) = -15 V typ. Sense-Status output, IS1 or IS2 ON-State: Normal operation: IS = IL / kILIS V IS = IS * RIS; RIS = 1kΩ nominal Overvolt. Protection of logic part OUT1 or OUT2 RIS > 500Ω I IS Sense output logic IS V Power GND + V bb V IS IN RI Z2 Logic IS Vf ESD-ZD R V PR O F ET Z1 IS GND GND R IS R GND Sig na l G N D V Z1 = 6,1V typ., V Z2 = 47V typ., R GND = 150Ω , ESD zener diode: VESD = 6,1 V typ., max. 14 mA ; RIS = 1kΩ , R I = 3,5kΩ typ. ON-State: Fault condition so as thermal shut down or current limitation Sense output logic Vfault Vfault Vf ESD-ZD R IS GND Vfault = 6 V typ ; Vfault < VESD under all conditions OFF-State diagnostic condition: Open Load, if VOUT > 3 V typ.; IN low Int. 5V IS - ST RI S GND ESDZD ESD-Zener diode: 6,1V typ., max. 5mA; RST(ON) < 375Ω at 1,6mA.. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Page 11 2004-Mar-08 PCN 2004-018-A: BTS 5240G Vbb disconnect with energized inductive load Reverse battery protection OUT1 or OUT2 - V bb V IN RI Z2 high IN L o g ic Vbb PROFET IS OUT OUT IS V GND Z1 PROFET -I G N D R IS R GND S ig n a l G N D V R Load bb Load G N D V Z1 = 6,1V typ., VZ2 = 47V typ., RGND = 150Ω RIS = 1kΩ, RI = 3,5kΩ typ. In case of reverse battery the load current has to be limited by the load. Protection functions are not active. For inductive load currents up to the limits defined by ZL each switch is protected against loss of Vbb. (max. ratings and diagram on page 12) Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. Open load detection, OUT1 or 2 Off-state diagnostic condition: Open load, if VOUT > 3 V typ.; IN = low V R Inductive load switch-off energy dissipation E bb bb E AS E XT IN O FF V PROFET OUT = Lo g ic u n it O p e n lo a d d e tec tio n ELoad Vbb OUT L IS GND ZL { R EL ER L S ig na l G N D Energy stored in load inductance: EL = ½ * L * IL2 GND disconnect While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, Vbb IN PROFET with an approximate solution for RL > 0Ω: OUT IS GND V bb V V IN IS V GND E AS = IL * L IL * R L *(V bb + | V OUT ( CL )| )* ln(1 + ) 2 * RL | V OUT ( CL )| Any kind of load. Page 12 2004-Mar-08 PCN 2004-018-A: BTS 5240G Typ. standby current Maximum allowable load inductance I bb(off) = f(T j) ; V bb = 16 V ; V IN1,2 = low for a single switch off (one channel) L =f(IL); Tjstart = 150°C, Vbb = 12V, RL = 0Ω 16 1000 14 12 10 Ibb(off) [µA] ZL(s) [mH] 100 8 6 10 4 2 1 0 -40 -20 0 0,1 0 5 10 15 20 40 60 80 100 120 140 160 Tj [°C] 20 I L [A] Typ. on-state resistance RON = f(V bb,T j); IL = 5 A ; V in = high 30 28 26 Ron [mOhm] 24 22 20 18 16 14 12 0 5 10 15 20 25 30 35 Vbb [V] Page 13 2004-Mar-08 PCN 2004-018-A: BTS 5240G Timing diagrams All channels are symmetric and consequently the diagrams are valid for channel 1 and channel 2. Figure 1a: Switching a resistive load, change of load current in on-condition Figure 1c: Behaviour of sense output: Sense current (I S) and sense voltage (V S) as function of load current dependent on the sense resistor. Shown is VS and IS for three different sense resistors. Curve 1 refers to a low resistor, curve 2 to a medium-sized resistor and curve 3 to a big resistor. Note, that the sense resistor may not falls short of a minimum value of 500Ω. IN VOUT t on IL t off t slc(IS) Load 1 t slc(IS) VS Load 2 VESD Vfault IS,V S t son(IS) t 3 2 1 The sense signal is not valid during settling time after turn on or change of load current. tslc(IS) = 300 µs typ. IL IS 1 2 Figure 1b: V bb turn on 3 IN IL(lim) Vbb IL IS = I L / kILIS V IS = I S * R IS; RIS = 1kΩ nominal RIS > 500Ω IL IS ,V S proper turn on under all conditions Page 14 2004-Mar-08 PCN 2004-018-A: BTS 5240G Figure 2a: Switching a lamp Figure 3a: Short circuit: Shut down by overtemperature, reset by cooling IN IN IS V IL(lim) IL OUT I I L(SCr) L t Vfault VS Figure 2b: Switching a lamp with current limit: The behaviour of IS and VS is shown for a resistor, which refers to curve 1 in figure 1c IN t delayfault Heating up may require several milliseconds, depending on external conditions. IL(lim) = 50A typ. increases with decreasing temperature. VO U T Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling ( channel 1 and 2 switched parallel ) IL IN 1 /2 IS 2 x I L (lim ) I L 1 + IL 2 2 x I L (lim ) VS V fa u lt t I L (S C r) t VS1 , VS2 Page 15 t d e la y fa u lt o ff(S C ) V fa u lt 2004-Mar-08 PCN 2004-018-A: BTS 5240G Figure 6b: Current sense ratio 1) Figure 4a: Overtemperature Reset if T j < Tjt 7000 The behaviour of IS and V S is shown for a resistor, which refers to curve 1 in figure 1c. kILIS IN 6000 IL 5000 IS tdelay(fault) [A] IL 4000 TJ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 t Figure 5a:Open-load: detection in OFF-state, turn on/off to open load. Open load of channel 1; other channels normal opertaion. IN1 V OUT1 t off t off tST delay tST delay I L1 IS Vfault toff = 250µs max.; t ST delay = 500µs max. with pull up resistor at output 1This range for the current sense ratio refers to all devices. The accuracy of the k ILIS can be raised by calibrating the value of kILIS for every single device. Page 16 2004-Mar-08 PCN 2004-018-A: BTS 5240G Package and ordering code all dimensions in mm Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. P-DSO-20-21 Q67060-S6145 1.27 0.35 7.6 -0.2 1) 8˚ ma x 0.35 x 45˚ 0.23 +0.0 9 2.45 -0.2 Ordering Code 2.65 max BTS 5240G 0.2 -0.1 Sales Code Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. 0.4 +0.8 +0.15 2) 0.2 24x 20 0.1 Terms of delivery and rights to technical change reserved. 10.3 ±0.3 11 We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. GPS05094 1 12.8 1) 10 -0.2 Infineon Technologies is an approved CECC manufacturer. Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 17 2004-Mar-08