PD - 95124
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IRFZ44NSPbF
IRFZ44NLPbF
Advanced Process Technology
Surface Mount (IRFZ44NS)
Low-profile through-hole (IRFZ44NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.0175Ω
G
ID = 49A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
49
35
160
3.8
94
0.63
± 20
25
9.4
5.0
-55 to + 175
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.5
40
°C/W
1
3/18/04
IRFZ44NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Min.
55
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Typ.
–––
0.058
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
44
45
7.5
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
17.5 mΩ VGS = 10V, ID = 25A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 25A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
63
ID = 25A
14
nC VDS = 44V
23
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 25A
ns
–––
RG = 12Ω
–––
VGS = 10V, See Fig. 10
–––
nH Between lead,
and center of die contact
1470 –––
VGS = 0V
360 –––
VDS = 25V
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
530 150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
49
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V
––– 63
95
ns
TJ = 25°C, IF = 25A
––– 170 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
Starting TJ = 25°C, L = 0.48mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
RG = 25Ω, IAS = 25A. (See Figure 12)
TJ ≤ 175°C
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ44NS/LPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
100
4.5V
10
100
4.5V
10
20µs PULSE WIDTH
25°C
TTJC==25°C
1
0.1
1
A
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TC
= 175°C
175°C
J=
10
A
I D = 41A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ44NS/LPbF
C, Capacitance (pF)
2000
Ciss
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS , Gate-to-Source Voltage (V)
2500
I D = 25A
V DS = 44V
V DS = 28V
16
12
1500
Coss
1000
Crss
500
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
70
A
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
3.0
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ44NS/LPbF
RD
V DS
VGS
50
D.U.T.
RG
+
-V DD
ID , Drain Current (A)
40
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
175
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ44NS/LPbF
500
TOP
BOTTOM
400
ID
10A
18A
25A
300
200
100
0
VDD = 25V
25
50
75
100
125
A
150
175
Starting TJ , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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+
V
- DS
IRFZ44NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS
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ISD
= 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
7
IRFZ44NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L O T CO D E 8 0 2 4
AS S E M B L E D O N W W 0 2 , 2 0 0 0
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E CT IF IE R
L O GO
N ote: "P " in as s em bly lin e
po s i tion in dicates "L ead-F r ee"
P AR T N U M B E R
F 53 0 S
AS S E M B L Y
L O T CO D E
D AT E CO D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
8
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
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IRFZ44NS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRFZ44NS/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/