Fairchild FDZ2554P Monolithic common drain p-channel 2.5v specified powertrench bga mosfet Datasheet

FDZ2554P
Monolithic Common Drain P-Channel 2.5V Specified Power Trench® BGA MOSFET
-20V, -6.5A, 28mΩ
Features
General Description
„ Max rDS(on) = 28mΩ at VGS = -4.5V, ID = -6.5A
Combining Fairchild’s advanced 2.5V specified PowerTrench
process with state-of-the-art BGA packaging, the FDZ2554P
minimizes both PCB space and rDS(on). This monolithic common
drain BGA MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, high current handling capability,
ultra-low profile packaging, low gate charge, and low rDS(on).
„ Max rDS(on) = 45mΩ at VGS = -2.5V, ID = -5A
„ Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8
„ Ultra-thin package: less than 0.80 mm height when mounted
to PCB
„ Outstanding thermal transfer characteristics: significantly better than SO-8
Applications
„ Battery management
„ Ultra-low Qg x rDS(on) figure-of-merit
„ Load Switch
„ High power and current handling capability
„ Battery protection
„ RoHS Compliant
S
G
Q1
D
Q2
G
S
Top
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
Ratings
-20
Units
V
±12
V
-6.5
-20
PD
Power Dissipation (Steady State)
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
A
2.1
W
-55 to +150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1)
0.6
60
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
108
RθJB
Thermal Resistance, Junction to Ball
(Note 1)
6.3
°C/W
Package Marking and Ordering Information
Device Marking
2554P
Device
FDZ2554P
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
Package
BGA 2.5X4.0
1
Reel Size
7’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench® BGA MOSFET
June 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-20
V
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS = 0V
±100
nA
-1.5
V
-13
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
3
VGS = -4.5V, ID = -6.5A
21
28
VGS = -2.5V, ID = -5A
36
45
VGS = -4.5V, ID = -6.5A,
TJ = 125°C
30
43
VDD = -5V, ID = -6.5A
24
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.6
-0.8
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -10V, VGS = 0V,
f = 1MHz
VGS = 15mV, f = 1MHz
1430
1900
pF
319
425
pF
164
245
pF
Ω
9.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
12
22
ns
9
18
td(off)
Turn-Off Delay Time
ns
62
100
tf
ns
Fall Time
37
60
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10V, ID =-1A,
VGS = -4.5V, RGEN = 6Ω
VGS = -4.5V , VDD =-10V
ID = -6.5A
3
nC
4
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -1.75A
-1.75
(Note 2)
IF = -6.5A, di/dt = 100A/µs
A
-0.7
-1.2
V
25
40
ns
20
32
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB
are guaranteed by design while RθJA is determined by the user's board design.
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 108 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
2
www.fairchildsemi.com
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
Electrical Characteristics TJ= 25°C unless otherwise noted
2.2
VGS = - 4.5V
VGS = -4V
VGS = - 3.5V
15
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID,DRAIN CURRENT (A)
20
VGS = -2.5V
VGS = -2V
10
5
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
0
0.0
1.8
1.6
VGS = -3.5V
1.2
VGS = -4V
1.0
VGS = -4.5V
0.8
0
0.5
1.0
1.5
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
5
10
-ID, DRAIN CURRENT(A)
15
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
90
1.4
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -2.5V
1.4
Figure 1. On-Region Characteristics
ID = -6.5A
VGS = -4.5V
1.3
1.2
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75
100
125
Figure 3. Normalized On- Resistance
vs Junction Temperature
60
50
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
10
VDD = -5V
TJ =125oC
TJ = 25oC
5
TJ = -55oC
0
0.5
1.0
1.5
2.0
-VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
TJ = 125oC
40
30
20
TJ = 25oC
2.0
2.5
3.0
3.5
4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 4. On-Resistance vs Gate to
Source Voltage
20
15
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
70
10
1.5
150
ID = -3.2A
80
TJ, JUNCTION TEMPERATURE (oC)
-ID, DRAIN CURRENT (A)
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = -2V
2.0
100
VGS = 0V
10
TJ= 125oC
1
0.1
TJ = 25oC
0.01
1E-3
TJ = -55oC
1E-4
0.0
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
5
2000
ID = -6.5A
Ciss
4
3
CAPACITANCE (pF)
VDD = -5V
VDD = -10V
2
VDD = -15V
1
4
8
12
Coss
100
16
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
1ms
10ms
1
100ms
SINGLE PULSE
TJ = MAX RATE
1s
o
RθJA = 108 C/W
0.1
TA = 25oC
10s
DC
THIS AREA IS LIMITED
BY rDS(ON)
0.01
0.1
1
10
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
100
3000
VGS = -4.5V
1000
Figure 9. Forward Bias Safe
Operating Area
NORMALIZED THERMAL
IMPEDANCE, ZθJA
0.1
SINGLE PULSE
o
RθJA = 108 C/W
o
TA = 25 C
100
10
1
0.5
-3
10
-2
-1
10
0
1
10
10
10
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
2
1
20
Figure 8. Capacitance vs Drain
to Source Voltage
100
10
Crss
f = 1MHz
VGS = 0V
30
0.1
0
0
1000
2
10
3
10
Figure 10. Single Pulse Maximum
Power Dissipation
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
1E-3
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
4
www.fairchildsemi.com
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
Dimensional Outline and Pad Layout
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
5
www.fairchildsemi.com
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Rev. I29
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
6
www.fairchildsemi.com
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
tm
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