TSC BC857ARF 250mw, pnp small signal transistor Datasheet

BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
1 Base
F
2 Emitter
B
Features
E
—Epitaxial planar die construction
—Surface device type mounting
C
—Moisture sensitivity level 1
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
Min
Max
—Case : SOT- 23 small outline plastic package
A
2.80
3.00
0.110
0.118
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
1.20
1.40
0.047
0.055
C
0.30
0.50
0.012
0.020
—High temperature soldering guaranteed: 260°C/10s
D
1.80
2.00
0.071
0.079
—Weight : 0.008gram (approximately)
E
2.25
2.55
0.089
0.100
F
0.90
1.20
0.035
0.043
Ordering Information
Package
Part No.
Suggested PAD Layout
Packing
Marking
SOT-23 BC856A RF
3K / 7" Reel
3A
SOT-23 BC856B RF
3K / 7" Reel
3B
SOT-23 BC857A RF
3K / 7" Reel
3E
SOT-23 BC857B RF
3K / 7" Reel
3F
2.0
SOT-23 BC857C RF
3K / 7" Reel
3G
0.079
SOT-23 BC858A RF
3K / 7" Reel
3J
SOT-23 BC858B RF
3K / 7" Reel
3K
SOT-23 BC858C RF
3K / 7" Reel
3L
SOT-23 BC856A RFG
3K / 7" Reel
3A
SOT-23 BC856B RFG
3K / 7" Reel
3B
SOT-23 BC857A RFG
3K / 7" Reel
3E
SOT-23 BC857B RFG
3K / 7" Reel
3F
SOT-23 BC857C RFG
3K / 7" Reel
3G
SOT-23 BC858A RFG
3K / 7" Reel
3J
SOT-23 BC858B RFG
3K / 7" Reel
3K
SOT-23 BC858C RFG
3K / 7" Reel
3L
0.95
0.037
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Value
Units
PD
mW
VEBO
250
-80
-50
-30
-65
-45
-30
-5
IC
-0.1
A
TJ, TSTG
-55 to + 150
°C
VCBO
VCEO
V
V
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
Min
-80
-50
-30
-65
-45
-30
Max
Units
-
V
-
V
IC= -10μA
IE= 0
V(BR)CBO
IC= -10mA
IB= 0
V(BR)CEO
Emitter-Base Breakdown Voltage
IE= -1μA
IC= 0
V(BR)EBO
-5
-
V
Collector Cut-off Current
VCB= -30V
IE= 0
ICBO
-
-15
nA
Emitter Cut-off Current
VEB= -5V
IC=0
IEBO
-
-0.1
μA
VCE= -5V
IC= -2mA
hFE
125
220
420
250
475
800
IC= -100mA IB= -5mA
VCE(sat)
-
-0.65
IC= -100mA IB= -5mA
VBE(sat)
-
-1.1
V
fT
100
-
MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
VCE= -5V
Transition frequency
IC= -10mA
f= 100MHz
V
Tape & Reel specification
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
E
A
C
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
F
W
B
W1
D
D2
D1
Direction of Feed
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-50
1000
IB = - 400µ A
IB = - 350µA
-40
VCE = - 5V
IB = - 300µA
-35
IB = - 250µA
-30
IB = - 200µA
-25
IB = - 150µA
-20
IB = - 100µA
-15
-10
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
100
IB = - 50µA
-5
10
-0.1
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
-100
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Figure 4. Base-Emitter On Voltage
-10
-100
IC = 10 IB
-1
V BE(sat)
-0.1
VCE(sat)
-0.01
-0.1
VCE = - 5V
-10
-1
-0.1
-1
-10
-100
-0.2
-0.4
IC[mA], COLLECTOR CURRENT
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
-0.8
-1.0
-1.2
Figure 6. Current Gain Bandwidth Product
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz IE=0
10
-0.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
Cob[pF], CAPACITANCE
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-0
1000
f=1MHz IE=0
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 7. DC current gain as a function of
collector current; typical values
hFE-IC
Figure 8. Base-emitter voltage as a function of
collector current; typical values
VBE-IC
Version : E11
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