GS8320Z18/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • User-configurable Pipeline and Flow Through mode • LBO pin for Linear or Interleave Burst mode • Pin compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • RoHS-compliant 100-lead TQFP package available The GS8320Z18/36AGT may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, meaning that in addition to the rising edge triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. Functional Description The GS8320Z18/36AGT is a 36Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The GS8320Z18/36AGT is implemented with GSI's high performance CMOS technology and is available in a JEDECstandard 100-pin TQFP package. Parameter Synopsis Pipeline 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.03 8/2013 tKQ tCycle Curr (x18) Curr (x36) tKQ tCycle Curr (x18) Curr (x36) -400 2.5 2.5 -375 2.5 2.66 -333 2.5 3.3 -250 2.5 4.0 -200 3.0 5.0 -150 3.8 6.7 Unit ns ns 395 475 390 455 355 415 280 335 240 280 205 230 mA mA 4.0 4.0 290 335 4.2 4.2 275 320 4.5 4.5 260 305 5.5 5.5 235 270 6.5 6.5 200 240 7.5 7.5 190 220 ns ns mA mA 1/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 A A E1 E2 NC NC BB BA E3 VDD VSS CK W CKE G ADV A A A A GS8320Z18AGT Pinout NC NC NC VDDQ A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC LBO A A A A A1 A0 NC NC VSS VDD NC A A A A A A A A VSS NC NC DQB DQB VSS VDDQ DQB DQB FT VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 2M x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Rev: 1.03 8/2013 2/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 A A E1 E2 BD BC BB BA E3 VDD VSS CK W CKE G ADV A A A A GS8320Z36AGT Pinout DQPC DQC DQC VDDQ DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA LBO A A A A A1 A0 NC NC VSS VDD NC A A A A A A A A VSS DQC DQC DQC DQC VSS VDDQ DQC DQC FT VDD NC VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 1M x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Rev: 1.03 8/2013 3/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 100-Pin TQFP Pin Descriptions Symbol Type Description A 0, A 1 In Burst Address Inputs; Preload the burst counter A In Address Inputs CK In Clock Input Signal BA In Byte Write signal for data inputs DQA1-DQA9; active low BB In Byte Write signal for data inputs DQB1-DQB9; active low BC In Byte Write signal for data inputs DQC1-DQC9; active low BD In Byte Write signal for data inputs DQD1-DQD9; active low W In Write Enable; active low E1 In Chip Enable; active low E2 In Chip Enable; Active High. For self decoded depth expansion E3 In Chip Enable; Active Low. For self decoded depth expansion G In Output Enable; active low ADV In Advance/Load; Burst address counter control pin CKE In Clock Input Buffer Enable; active low DQA I/O Byte A Data Input and Output pins DQB I/O Byte B Data Input and Output pins DQC I/O Byte C Data Input and Output pins DQD I/O Byte D Data Input and Output pins ZZ In Power down control; active high FT In Pipeline/Flow Through Mode Control; active low LBO In Linear Burst Order; active low VDD In Core power supply VSS In Ground VDDQ In Output driver power supply NC — No Connect Rev: 1.03 8/2013 4/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Register 1 Register 2 K Write Data Write Data K D Q K FT DQa–DQn GS8320Z18/36AGT NBT SRAM Functional Block Diagram Memory Array Sense Amps FT Register 2 Register 1 Control Logic 5/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. G CKE CK E3 E2 E1 BD BC BB BA W LBO ADV A0–An K K Data Coherency Match Read, Write and K Write Address Write Address K K D Q SA1 SA0 Burst Counter SA1’ SA0’ Write Drivers Rev: 1.03 8/2013 © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipeline Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2 and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function W BA BB BC BD Read H X X X X Write Byte “a” L L H H H Write Byte “b” L H L H H Write Byte “c” L H H L H Write Byte “d” L H H H L Write all Bytes L L L L L Write Abort/NOP L H H H H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted Low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins. Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, & BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow Through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.03 8/2013 6/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Synchronous Truth Table Operation Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ DQ Read Cycle, Begin Burst R External L-H L L H X L H L L L Q Read Cycle, Continue Burst B Next L-H L H X X X X X L L Q 1,10 NOP/Read, Begin Burst R External L-H L L H X L H L H L High-Z 2 Dummy Read, Continue Burst B Next L-H L H X X X X X H L High-Z 1,2,10 Write Cycle, Begin Burst W External L-H L L L L L H L X L D 3 Write Abort, Begin Burst D None L-H L L L H L H L X L High-Z 1 Write Cycle, Continue Burst B Next L-H L H X L X X X X L D 1,3,10 Write Abort, Continue Burst B Next L-H L H X H X X X X L High-Z 1,2,3,10 Deselect Cycle, Power Down D None L-H L L X X H X X X L High-Z Deselect Cycle, Power Down D None L-H L L X X X X H X L High-Z Deselect Cycle, Power Down D None L-H L L X X X L X X L High-Z Deselect Cycle, Continue D None L-H L H X X X X X X L High-Z None X X X X X X X X X H High-Z Current L-H H X X X X X X X L - Sleep Mode Clock Edge Ignore, Stall Notes 1 4 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.03 8/2013 7/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Pipeline and Flow Through Read Write Control State Diagram D B Deselect W R D D W New Read New Write R R W B B R W R Burst Read W Burst Write B B D Key D Notes: Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B and D represent input command codes ,as indicated in the Synchronous Truth Table. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for Pipeline and Flow Through Read/Write Control State Diagram Rev: 1.03 8/2013 8/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Pipeline Mode Data I/O State Diagram Intermediate B W R B Intermediate R High Z (Data In) D Data Out (Q Valid) W D Intermediate Intermediate W Intermediate R High Z B D Intermediate Key Notes: Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Intermediate State (N+1) n Next State (n+2) n+1 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+2 n+3 Clock (CK) Command ƒ ƒ ƒ Current State Intermediate State Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.03 8/2013 9/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Flow Through Mode Data I/O State Diagram B W R B R High Z (Data In) Data Out (Q Valid) W D D W R High Z B D Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B and D represent input command codes as indicated in the Truth Tables. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for: Pipeline and Flow Through Read Write Control State Diagram Rev: 1.03 8/2013 10/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details. Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Output Register Control FT Power Down Control ZZ State Function L Linear Burst H Interleaved Burst L Flow Through H or NC Pipeline L or NC Active H Standby, IDD = ISB Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin , so this input pin can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences Linear Burst Sequence Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Rev: 1.03 8/2013 Note: The burst counter wraps to initial state on the 5th clock. 11/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a deselect or read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC tKL CK tZZR tZZS tZZH ZZ Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Pin 14. Not all vendors offer this option, however most mark Pin 14 as VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Rev: 1.03 8/2013 12/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to VDD V VI/O Voltage on I/O Pins –0.5 to VDD +0.5 ( 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 ( 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 oC TBIAS Temperature Under Bias –55 to 125 oC Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges Parameter Symbol Min. Typ. Max. Unit 3.3 V Supply Voltage VDD3 3.0 3.3 3.6 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 3.3 V VDDQ I/O Supply Voltage VDDQ3 3.0 3.3 3.6 V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V Parameter Symbol Min. Typ. Max. Unit Input High Voltage VIH 2.0 — VDD + 0.3 V Input Low Voltage VIL –0.3 — 0.8 V VDD3 Range Logic Levels Notes: 1. VIH (max) must be met for any instantaneous value of VDD. 2. VDD needs to power-up before or at the same time as VDDQ to make sure VIH (max) is not exceeded. Rev: 1.03 8/2013 13/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 VDD2 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Input High Voltage VIH 0.6*VDD — VDD + 0.3 V Input Low Voltage VIL –0.3 — 0.3*VDD V Notes: 1. VIH (max) must be met for any instantaneous value of VDD. 2. VDD needs to power-up before or at the same time as VDDQ to make sure VIH (max) is not exceeded. Operating Temperature Parameter Symbol Min. Typ. Max. Unit Junction Temperature (Commercial Range Versions) TJ 0 25 85 C Junction Temperature (Industrial Range Versions)* TJ –40 25 100 C Note: * The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. Thermal Impedance Package Test PCB Substrate JA (C°/W) Airflow = 0 m/s JA (C°/W) Airflow = 1 m/s JA (C°/W) Airflow = 2 m/s JB (C°/W) JC (C°/W) 100 TQFP 4-layer 28.7 23.8 22.3 15.1 6.5 Notes: 1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number. 2. Please refer to JEDEC standard JESD51-6. 3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to the PCB can result in cooling or heating of the RAM depending on PCB temperature. Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Note: Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.03 8/2013 14/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDD/2 Output reference level VDDQ/2 Output load Fig. 1 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. Output Load 1 DQ 50 30pF* VDDQ/2 * Distributed Test Jig Capacitance Rev: 1.03 8/2013 15/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA ZZ Input Current IIN1 VDD VIN VIH 0 V VIN VIH –1 uA –1 uA 1 uA 100 uA FT Input Current IIN2 VDD VIN VIL 0 V VIN VIL –100 uA –1 uA 1 uA 1 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.375 V 1.7 V — Output High Voltage VOH3 IOH = –8 mA, VDDQ = 3.135 V 2.4 V — Output Low Voltage VOL IOL = 8 mA — 0.4 V Rev: 1.03 8/2013 16/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology Rev: 1.03 8/2013 Flow Through IDD 100 100 IDD 55 ISB Pipeline Pipeline 265 25 IDD IDDQ Flow Through 55 355 40 IDD IDDQ Pipeline ISB 285 50 IDD IDDQ Flow Through Flow Through 395 80 0 to 70°C IDD IDDQ Symbol Pipeline Mode 120 120 75 75 285 25 375 40 305 50 415 80 –40 to 85°C -400 Notes: 1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation. 2. All parameters listed are worst case scenario. — Device Deselected; All other inputs VIH or VIL Deselect Current (x18) — Operating Current (x36) ZZ VDD – 0.2 V Device Selected; All other inputs VIH or VIL Output open Standby Current Test Conditions Parameter Operating Currents 100 100 55 55 250 25 350 40 270 50 380 75 0 to 70°C 120 120 75 75 270 25 370 40 290 50 400 75 –40 to 85°C -375 100 100 55 55 235 25 320 35 260 45 345 70 0 to 70°C 120 120 75 75 255 25 340 35 280 45 365 70 –40 to 85°C -333 100 100 55 55 215 20 255 25 230 40 285 50 0 to 70°C 120 120 75 75 235 20 275 25 250 40 305 50 –40 to 85°C -250 100 100 55 55 185 15 220 20 205 35 240 40 0 to 70°C 120 120 75 75 205 15 240 20 225 35 260 40 –40 to 85°C -200 100 100 55 55 175 15 190 15 190 30 200 30 0 to 70°C 120 120 75 75 195 15 210 15 210 30 220 30 –40 to 85°C -150 mA mA mA mA mA mA mA mA Unit GS8320Z18/36AGT-400/375/333/250/200/150 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 17/23 © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Pipeline Flow Through Parameter Symbol Clock Cycle Time -400 -375 -333 -250 -200 -150 Min Max Unit AC Electrical Characteristics Min Max Min Max Min Max Min Max Min Max tKC 2.5 — 2.66 — 3.3 — 4.0 — 5.0 — 6.7 — ns Clock to Output Valid tKQ — 2.5 — 2.5 — 2.5 — 2.5 — 3.0 — 3.8 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in Low-Z tLZ1 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Setup time tS 0.9 — 0.9 — 1.0 — 1.2 — 1.4 — 1.5 — ns Hold time tH 0.1 — 0.1 — 0.1 — 0.2 — 0.4 — 0.5 — ns Clock Cycle Time tKC 4.0 — 4.2 — 4.5 — 5.5 — 6.5 — 7.5 — ns Clock to Output Valid tKQ — 4.0 — 4.2 — 4.5 — 5.5 — 6.5 — 7.5 ns Clock to Output Invalid tKQX 2.0 — 2.0 — 2.0 — 2.0 — 2.0 — 2.0 — ns Clock to Output in Low-Z tLZ1 2.0 — 2.0 — 2.0 — 2.0 — 2.0 — 2.0 — ns Setup time tS 1.2 — 1.2 — 1.3 — 1.5 — 1.5 — 1.5 — ns Hold time tH 0.2 — 0.2 — 0.3 — 0.5 — 0.5 — 0.5 — ns Clock HIGH Time tKH 0.9 — 0.9 — 1.0 — 1.3 — 1.3 — 1.5 — ns Clock LOW Time tKL 1.1 — 1.1 — 1.2 — 1.5 — 1.5 — 1.7 — ns Clock to Output in High-Z tHZ1 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 1.5 3.0 1.5 3.8 ns G to Output Valid tOE — 2.5 — 2.5 — 2.5 — 2.5 — 3.0 — 3.8 ns G to output in Low-Z tOLZ1 0 — 0 — 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 2.5 — 2.5 — 2.5 — 2.5 — 3.0 — 3.8 ns ZZ setup time tZZS2 5 — 5 — 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.03 8/2013 18/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Pipeline Mode Timimg (NBT)) Write A Read B Suspend Read C tKH Write D Write No-op Read E Deselect tKC tKL CK tH tS A A B C D E tH tS CKE tH tS E* tH tS ADV tH tS W tH tH tS tS Bn tH tLZ tKQ tS DQ Rev: 1.03 8/2013 D(A) Q(B) Q(C) D(D) 19/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. tHZ tKQX Q(E) © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Flow Through Mode Timing (NBT) Write A Write B Write B+1 Read C Cont Read D Write E Read F Write G tKL tKH tKC CK tH tS CKE tH tS E tH tS ADV tH tS W tH tS Bn tH tS A0–An A B C D E F G tKQ tH tKQ tLZ tS DQ D(A) D(B) D(B+1) tKQX tHZ Q(C) Q(D) tLZ D(E) tKQX Q(F) D(G) tOLZ tOE tOHZ G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.03 8/2013 20/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Description A1 Standoff 0.05 0.10 0.15 A2 Body Thickness 1.35 1.40 1.45 b Lead Width 0.20 0.30 0.40 c Lead Thickness 0.09 — 0.20 D Terminal Dimension 21.9 22.0 22.1 D1 Package Body 19.9 20.0 20.1 E Terminal Dimension 15.9 16.0 16.1 E1 Package Body 13.9 14.0 14.1 e Lead Pitch — 0.65 — L Foot Length 0.45 0.60 0.75 L1 Lead Length — 1.00 — Y Coplanarity Lead Angle D D1 Symbol Pin 1 TQFP Package Drawing (Package T) L c L1 Min. Nom. Max e b A1 A2 0.10 Y 0 — 7 E1 E Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. Rev: 1.03 8/2013 21/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 Ordering Information—GSI NBT Synchronous SRAM Org Part Number1 Type Package Speed2 (MHz/ns) TJ3 2M x 18 GS8320Z18AGT-400 NBT Pipeline/Flow Through RoHS-compliant TQFP 400/4.0 C 2M x 18 GS8320Z18AGT-375 NBT Pipeline/Flow Through RoHS-compliant TQFP 375/4.2 C 2M x 18 GS8320Z18AGT-333 NBT Pipeline/Flow Through RoHS-compliant TQFP 333/4.5 C 2M x 18 GS8320Z18AGT-250 NBT Pipeline/Flow Through RoHS-compliant TQFP 250/5.5 C 2M x 18 GS8320Z18AGT-200 NBT Pipeline/Flow Through RoHS-compliant TQFP 200/6.5 C 2M x 18 GS8320Z18AGT-150 NBT Pipeline/Flow Through RoHS-compliant TQFP 150/7.5 C 1M x 36 GS8320Z36AGT-400 NBT Pipeline/Flow Through RoHS-compliant TQFP 400/4.0 C 1M x 36 GS8320Z36AGT-375 NBT Pipeline/Flow Through RoHS-compliant TQFP 375/4.2 C 1M x 36 GS8320Z36AGT-333 NBT Pipeline/Flow Through RoHS-compliant TQFP 333/4.5 C 1M x 36 GS8320Z36AGT-250 NBT Pipeline/Flow Through RoHS-compliant TQFP 250/5.5 C 1M x 36 GS8320Z36AGT-200 NBT Pipeline/Flow Through RoHS-compliant TQFP 200/6.5 C 1M x 36 GS8320Z36AGT-150 NBT Pipeline/Flow Through RoHS-compliant TQFP 150/7.5 C 2M x 18 GS8320Z18AGT-400I NBT Pipeline/Flow Through RoHS-compliant TQFP 400/4.0 I 2M x 18 GS8320Z18AGT-375I NBT Pipeline/Flow Through RoHS-compliant TQFP 375/4.2 I 2M x 18 GS8320Z18AGT-333I NBT Pipeline/Flow Through RoHS-compliant TQFP 333/4.5 I 2M x 18 GS8320Z18AGT-250I NBT Pipeline/Flow Through RoHS-compliant TQFP 250/5.5 I 2M x 18 GS8320Z18AGT-200I NBT Pipeline/Flow Through RoHS-compliant TQFP 200/6.5 I 2M x 18 GS8320Z18AGT-150I NBT Pipeline/Flow Through RoHS-compliant TQFP 150/7.5 I 1M x 36 GS8320Z36AGT-400I NBT Pipeline/Flow Through RoHS-compliant TQFP 400/4.0 I 1M x 36 GS8320Z36AGT-375I NBT Pipeline/Flow Through RoHS-compliant TQFP 375/4.2 I 1M x 36 GS8320Z36AGT-333I NBT Pipeline/Flow Through RoHS-compliant TQFP 333/4.5 I 1M x 36 GS8320Z36AGT-250I NBT Pipeline/Flow Through RoHS-compliant TQFP 250/5.5 I 1M x 36 GS8320Z36AGT-200I NBT Pipeline/Flow Through RoHS-compliant TQFP 200/6.5 I 1M x 36 GS8320Z36AGT-150I NBT Pipeline/Flow Through RoHS-compliant TQFP 150/7.5 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8320Z36AGT-200IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. C = Commercial Temperature Range. I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.03 8/2013 22/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS8320Z18/36AGT-400/375/333/250/200/150 36Mb Sync SRAM Datasheet Revision History File Name Types of Changes Format or Content Page;Revisions;Reason • Creation of new datasheet 8320ZxxA_r1 8320ZxxA_r1_01 Content • Updated Absolute Maximum Ratings • Added thermal information 8320ZxxA_r1_02 Content • Updated to reflect MP status • (Rev1.02a: Corrected ordering information table) 8320ZxxA_r1_03 Content • Updated Op current numbers Rev: 1.03 8/2013 23/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GSI Technology: GS8320Z36AGT-250I GS8320Z36AGT-333I GS8320Z18AGT-333 GS8320Z18AGT-200I GS8320Z36AGT-200 GS8320Z18AGT-375I GS8320Z36AGT-333 GS8320Z18AGT-375 GS8320Z18AGT-400I GS8320Z36AGT-200I GS8320Z36AGT-400I GS8320Z18AGT-250I GS8320Z18AGT-400 GS8320Z36AGT-375 GS8320Z36AGT-150 GS8320Z18AGT-150I GS8320Z18AGT-200 GS8320Z36AGT-250 GS8320Z36AGT-375I GS8320Z18AGT-333I GS8320Z18AGT-150 GS8320Z18AGT-250 GS8320Z36AGT-150I GS8320Z36AGT-400