PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA (256M words × 72 bits, 2 Banks) Description Features The EBD21RD4ABNA is a 256M words × 72 bits, 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of DDR SDRAM sealed in TCP package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2-bit prefetchpipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each TCP on the module board. • 184-pin socket type dual in line memory module (DIMM) PCB height: 30.48mm Lead pitch: 1.27mm • 2.5V power supply • Data rate: 266Mbps/200Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data transfers per clock cycle • Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver • Data inputs and outputs are synchronized with DQS • 4 internal banks for concurrent operation (Component) • DQS is edge aligned with data for READs; center aligned with data for WRITEs • Differential clock inputs (CK and /CK) • LL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data referenced to both edges of DQS • Auto precharge option for each burst access • Programmable burst length: 2, 4, 8 • Programmable /CAS latency (CL): 2, 2.5 • Refresh cycles: (8192 refresh cycles /64ms) 7.8µs maximum average periodic refresh interval • 2 variations of refresh Auto refresh Self refresh • 1 piece of PLL clock driver, 1 piece of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD) Note: Do not push the cover or drop the modules in order to avoid mechanical defects, which may result in electrical defects. Document No. E0273E20 (Ver. 2.0) Date Published Aug 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2002 EBD21RD4ABNA Ordering Information Part number Data rate Mbps (max.) Component JEDEC speed bin*1 (CL-tRCD-tRP) EBD21RD4ABNA-7A EBD21RD4ABNA-7B EBD21RD4ABNA-10 266 266 200 DDR266A (2-3-3) DDR266B (2.5-3-3) DDR200 (2-2-2) Package 184-pin DIMM Contact pad Gold Mounted devices 512M bits DDR SDRAM TCP*2 Notes: 1. Module /CAS latency = component CL + 1 2. Please refer to 512Mb DDR TSOP product datasheet (E0237E) for electrical characteristics. Pin Configurations Front side 1 pin 52 pin 53 pin 93 pin 92 pin 144 pin 145 pin 184 pin Back side Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREF 47 DQS8 93 VSS 139 VSS 2 DQ0 48 A0 94 DQ4 140 DM8/DQS17 3 VSS 49 CB2 95 DQ5 141 A10 4 DQ1 50 VSS 96 VDDQ 142 CB6 5 DQS0 51 CB3 97 DM0/DQS9 143 VDDQ 6 DQ2 52 BA1 98 DQ6 144 CB7 7 VDD 53 DQ32 99 DQ7 145 VSS 8 DQ3 54 VDDQ 100 VSS 146 DQ36 9 NC 55 DQ33 101 NC 147 DQ37 10 /RESET 56 DQS4 102 NC 148 VDD 11 VSS 57 DQ34 103 NC 149 DM4/DQS13 12 DQ8 58 VSS 104 VDDQ 150 DQ38 13 DQ9 59 BA0 105 DQ12 151 DQ39 14 DQS1 60 DQ35 106 DQ13 152 VSS 15 VDDQ 61 DQ40 107 DM1/DQS10 153 DQ44 16 NC 62 VDDQ 108 VDD 154 /RAS 17 NC 63 /WE 109 DQ14 155 DQ45 18 VSS 64 DQ41 110 DQ15 156 VDDQ 19 DQ10 65 /CAS 111 CKE1 157 /CS0 20 DQ11 66 VSS 112 VDDQ 158 /CS1 21 CKE0 67 DQS5 113 NC 159 DM5/DQS14 22 VDDQ 68 DQ42 114 DQ20 160 VSS 23 DQ16 69 DQ43 115 A12 161 DQ46 24 DQ17 70 VDD 116 VSS 162 DQ47 25 DQS2 71 NC 117 DQ21 163 NC 26 VSS 72 DQ48 118 A11 164 VDDQ 27 A9 73 DQ49 119 DM2/DQS11 165 DQ52 28 DQ18 74 VSS 120 VDD 166 DQ53 Preliminary Data Sheet E0273E20 (Ver. 2.0) 2 EBD21RD4ABNA Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 29 A7 75 NC 121 DQ22 167 NC 30 VDDQ 76 NC 122 A8 168 VDD 31 DQ19 77 VDDQ 123 DQ23 169 DM6/DQS15 32 A5 78 DQS6 124 VSS 170 DQ54 33 DQ24 79 DQ50 125 A6 171 DQ55 34 VSS 80 DQ51 126 DQ28 172 VDDQ 35 DQ25 81 VSS 127 DQ29 173 NC 36 DQS3 82 VDDID 128 VDDQ 174 DQ60 37 A4 83 DQ56 129 DM3/DQS12 175 DQ61 38 VDD 84 DQ57 130 A3 176 VSS 39 DQ26 85 VDD 131 DQ30 177 DM7/DQS16 40 DQ27 86 DQS7 132 VSS 178 DQ62 41 A2 87 DQ58 133 DQ31 179 DQ63 42 VSS 88 DQ59 134 CB4 180 VDDQ 43 A1 89 VSS 135 CB5 181 SA0 44 CB0 90 NC 136 VDDQ 182 SA1 45 CB1 91 SDA 137 CK0 183 SA2 46 VDD 92 SCL 138 /CK0 184 VDDSPD Preliminary Data Sheet E0273E20 (Ver. 2.0) 3 EBD21RD4ABNA Pin Description Pin name Function A0 to A12 Address input Row address Column address BA0, BA1 Bank select address DQ0 to DQ63 Data input/output CB0 to CB7 Check bit (Data input/output) /RAS Row address strobe command /CAS Column address strobe command /WE Write enable /CS0, /CS1 Chip select CKE0, CKE1 Clock enable CK0 Clock input A0 to A12 A0 to A9, A11, A12 /CK0 Differential clock input DQS0 to DQS8 Input and output data strobe DM0 to DM8/DQS9 to DQS17 Input and output data strobe SCL Clock input for serial PD SDA Data input/output for serial PD SA0 to SA2 Serial address input VDD Power for internal circuit VDDQ Power for DQ circuit VDDSPD Power for serial EEPROM VREF Input reference voltage VSS Ground VDDID VDD identification flag /RESET Reset pin (forces register inputs low) NC No connection Preliminary Data Sheet E0273E20 (Ver. 2.0) 4 EBD21RD4ABNA 1 Serial PD Matrix* Byte No. 0 1 Function described Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 1 0 0 0 0 0 0 0 80H 128 0 0 0 0 1 0 0 0 08H 256 byte 2 Memory type 0 0 0 0 0 1 1 1 07H SDRAM DDR 3 Number of row address 0 0 0 0 1 1 0 1 0DH 13 4 Number of column address 0 0 0 0 1 1 0 0 0CH 12 5 Number of DIMM banks 0 0 0 0 0 0 1 0 02H 2 6 Module data width 0 1 0 0 1 0 0 0 48H 72 bits 7 Module data width continuation 0 0 0 0 0 0 0 0 00H 0 (+) 8 Voltage interface level of this assembly 0 0 0 0 0 1 0 0 04H SSTL 2.5V 9 DDR SDRAM cycle time, CL = X -7A, -7B 0 1 1 1 0 1 0 1 75H CL = 2.5*3 1 0 1 0 0 0 0 0 A0H 0 1 1 1 0 1 0 1 75H 0.75ns*3 1 0 0 0 0 0 0 0 80H 0.8ns*3 -10 10 SDRAM access from clock (tAC) -7A, -7B -10 11 DIMM configuration type 0 0 0 0 0 0 1 0 02H ECC 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8 µs Self refresh 13 Primary SDRAM width 0 0 0 0 0 1 0 0 04H ×4 14 Error checking SDRAM width 0 0 0 0 0 1 0 0 04H ×4 0 0 0 0 0 0 0 1 01H 1 CLK 0 0 0 0 1 1 1 0 0EH 2, 4, 8 0 0 0 0 0 1 0 0 04H 4 0 0 0 0 1 1 0 0 0CH 2, 2.5 0 0 0 0 0 0 0 1 01H 0 0 0 0 0 0 0 1 0 02H 1 SDRAM module attributes 0 0 1 0 0 1 1 0 26H Registered 22 SDRAM device attributes: General 1 1 0 0 0 0 0 0 C0H ± 0.2V 23 Minimum clock cycle time at CLX - 0.5 0 -7A 1 1 1 0 1 0 1 75H CL = 2*3 1 0 1 0 0 0 0 0 A0H 24 Maximum data access time (tAC) from clock at CLX - 0.5 0 -7A, -7B 1 1 1 0 1 0 1 75H 0.75ns*3 -10 1 0 0 0 0 0 0 0 80H 0.8ns*3 25 Minimum clock cycle time at CLX - 1 0 0 0 0 0 0 0 0 00H 26 Maximum data access time (tAC) from 0 clock at CLX - 1 0 0 0 0 0 0 0 00H 27 Minimum row precharge time (tRP) 0 1 0 1 0 0 0 0 50H 20ns 28 Minimum row active to row active delay (tRRD) 0 0 1 1 1 1 0 0 3CH 15ns 29 Minimum /RAS to /CAS delay (tRCD) 0 1 0 1 0 0 0 0 50H 20ns 15 16 17 18 19 20 21 SDRAM device attributes: Minimum clock delay back-to-back column access SDRAM device attributes: Burst length supported SDRAM device attributes: Number of banks on SDRAM device SDRAM device attributes: /CAS latency SDRAM device attributes: /CS latency SDRAM device attributes: /WE latency -7B, -10 Preliminary Data Sheet E0273E20 (Ver. 2.0) 5 EBD21RD4ABNA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 30 Minimum active to precharge time (tRAS) -7A, -7B 0 0 1 0 1 1 0 1 2DH 45ns 0 0 1 1 0 0 1 0 32H 50ns -10 31 Module bank density 0 0 0 0 0 0 0 1 01H 2 banks 1GB 32 Address and command setup time before clock (tIS) -7A, -7B 1 0 0 1 0 0 0 0 90H 0.9ns*3 1 0 1 1 0 0 0 0 B0H 1.1ns*3 Address and command hold time after clock (tIH) 1 -7A, -7B 0 0 1 0 0 0 0 90H 0.9ns*3 1 0 1 1 0 0 0 0 B0H 1.1ns*3 0 1 0 1 0 0 0 0 50H 0.5ns*3 0 1 1 0 0 0 0 0 60H 0.6ns*3 0 1 0 1 0 0 0 0 50H 0.5ns*3 0 1 1 0 0 0 0 0 60H 0.6ns*3 -10 33 -10 34 Data input setup time before clock (tDS) -7A, -7B -10 35 Data input hold time after clock (tDH) -7A, -7B -10 36 to 40 Superset information 0 0 0 0 0 0 0 0 00H Future use 41 Active command period (tRC) -7A, -7B 0 1 0 0 0 0 1 1 43H 67.5ns*3 0 1 0 0 0 1 1 0 46H 70ns*3 0 1 0 0 1 0 1 1 4BH 75ns*3 0 1 0 1 0 0 0 0 50H 80ns*3 -10 42 Auto refresh to active/ Auto refresh command cycle (tRFC) -7A, -7B -10 43 SDRAM tCK cycle max. (tCK max.) 0 0 1 1 0 0 0 0 30H 12ns*3 44 Dout to DQS skew -7A, -7B 0 0 1 1 0 0 1 0 32H 500ps*3 0 0 1 1 1 1 0 0 3CH 600ps*3 0 1 1 1 0 1 0 1 75H 750ps*3 1 0 1 0 0 0 0 0 A0H 1000ps*3 -10 45 Data hold skew (tQHS) -7A, -7B -10 46 to 61 Superset information 0 0 0 0 0 0 0 0 00H Future use 62 SPD revision 0 0 0 0 0 0 0 0 00H Initial 63 Checksum for bytes 0 to 62 -7A 1 0 0 0 1 1 0 1 8DH 141 -7B 1 0 1 1 1 0 0 0 B8H 184 -10 1 0 0 1 1 0 1 1 9BH 155 64 Manufacturer’s JEDEC ID code 0 1 1 1 1 1 1 1 7FH 65 Manufacturer’s JEDEC ID code 0 1 1 1 1 1 1 1 7FH 66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH 67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H 72 Manufacturing location × × × × × × × × ×× *2 (ASCII-8bit code) 73 Module part number 0 1 0 0 0 1 0 1 45H E 74 Module part number 0 1 0 0 0 0 1 0 42H B 75 Module part number 0 1 0 0 0 1 0 0 44H D 76 Module part number 0 0 1 1 0 0 1 0 32H 2 Preliminary Data Sheet E0273E20 (Ver. 2.0) 6 Elpida Memory EBD21RD4ABNA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 77 Module part number 0 0 1 1 0 0 0 1 31H 1 78 Module part number 0 1 0 1 0 0 1 0 52H R 79 Module part number 0 1 0 0 0 1 0 0 44H D 80 Module part number 0 0 1 1 0 1 0 0 34H 4 81 Module part number 0 1 0 0 0 0 0 1 41H A 82 Module part number 0 1 0 0 0 0 1 0 42H B 83 Module part number 0 1 0 0 1 1 1 0 4EH N 84 Module part number 0 1 0 0 0 0 0 1 41H A 85 Module part number 0 0 1 0 1 1 0 1 2DH — 86 Module part number -7A, -7B 0 0 1 1 0 1 1 1 37H 7 0 0 1 1 0 0 0 1 31H 1 0 1 0 0 0 0 0 1 41H A -7B 0 1 0 0 0 0 1 0 42H B -10 0 0 1 1 0 0 0 0 30H 0 -10 87 Module part number -7A 88 to 90 Module part number 0 0 1 0 0 0 0 0 20H (Space) 91 Revision code 0 0 1 1 0 0 0 0 30H Initial 92 Revision code 0 0 1 0 0 0 0 0 20H (Space) Year code (HEX) Week code (HEX) 93 Manufacturing date × × × × × × × × ×× 94 Manufacturing date × × × × × × × × ×× 95 to 98 Module serial number 99 to 127 Manufacturer specific data 2 * Notes: 1. All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High” These SPD are based on JEDEC Committee Ballot JC-42.5-99-129. 2. Bytes 95 through 98 are assembly serial number. 3. These specifications are defined based on component specification, not module. Preliminary Data Sheet E0273E20 (Ver. 2.0) 7 EBD21RD4ABNA Block Diagram VSS /RCS1 /RCS0 RS RS DQS0 DM0/DQS9 4 RS DQ0 to DQ3 DQS /CS DQ D0 DM DQS /CS DQ D18 DM 4 RS 4 RS DQS /CS DQ D1 DM DQS /CS DQ D19 DM 4 RS 4 RS DQS /CS DQ D2 DM DQS /CS DQ D20 DM 4 4 RS DQS /CS DQ D3 DM DQS /CS DQ D21 DM 4 RS DQ28 to DQ31 RS D27 DM DQS /CS DQ D10 DM DQS /CS DQ D28 DM DQS /CS DQ D11 DM DQS /CS DQ D29 DM DQS /CS DQ D12 DM DQS /CS DQ D30 DM RS DM4/DQS13 4 RS DQ32 to DQ35 DQS /CS DQ D4 DM DQS /CS DQ D22 DM 4 RS DQ36 to DQ39 RS DQS /CS DQ D13 DM DQS /CS DQ D31 DM RS DQS5 DM5/DQS14 4 RS DQ40 to DQ43 DQS /CS DQ D5 DM DQS /CS DQ D23 DM 4 RS DQ44 to DQ47 RS DQS /CS DQ D14 DM DQS /CS DQ D32 DM RS DQS6 DM6/DQS15 4 RS DQ48 to DQ51 DQS /CS DQ D6 DM DQS /CS DQ D24 DM 4 RS DQ52 to DQ55 RS DQS /CS DQ D15 DM DQS /CS DQ D33 DM RS DQS7 DM7/DQS16 4 RS DQ56 to DQ59 DQS /CS DQ D7 DM DQS /CS DQ D25 DM 4 RS DQ60 to DQ63 RS DQS /CS DQ D16 DM DQS /CS DQ D34 DM RS DQS8 DM8/DQS17 4 RS CB0 to CB3 /WE /CS DQ RS DQS4 CKE1 DQS DM3/DQS12 DQ24 to DQ27 CKE0 RS DQ20 to DQ23 RS /CAS DM RS DQS3 /RAS D9 DM2/DQS11 DQ16 to DQ19 A0 to A12 RS DQ12 to DQ15 DQS2 BA0 to BA1 /CS DQ DM1/DQS10 DQ8 to DQ11 /CS1 DQS RS DQS1 /CS0 RS DQ4 to DQ7 RS RS RS RS RS RS RS PCK /PCK /CS DQ D8 DM DQS /CS DQ D26 DM 4 CB4 to CB7 /RCS0 -> /CS: SDRAMs D0 to D17 RS RS DQS R E G I S T E R /RCS1 -> /CS: SDRAMs D18 to D35 RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D35 RA0 to RA12 -> A0 to A12: SDRAMs D0 to D35 RS DQS /CS DQ D17 DM DQS /CS DQ D35 * D0 to D35: 512M bits DDR SDRAM TCP U0: 2k bits EEPROM RS: 22Ω (DQ, DQS) PLL: CDCV857 Register: SSTV32852 Serial PD /RRAS -> /RAS: SDRAMs D0 to D35 /RCAS -> /CAS: SDRAMs D0 to D35 SCL SCL RCKE0 -> CKE: SDRAMs D0 to D17 SDA SDA U0 RCKE1 -> CKE: SDRAMs D18 to D35 A0 /RWE -> /WE: SDRAMs D0 to D35 /RESET VDD, VDDQ D0 to D35 VREF D0 to D35 VSS D0 to D35 A1 A2 SA0 SA1 SA2 Notes: 1. The SDA pull-up resistor is required due to the open-drain/open-collector output. 2. The SCL pull-up resistor is recommended because of the normal SCL line inacitve "high" state. VDDID open CK0, /CK0 PLL* Note: Wire per Clock loading table/Wiring diagrams. Preliminary Data Sheet E0273E20 (Ver. 2.0) 8 DM EBD21RD4ABNA Differential Clock Net Wiring (CK0, /CK0) 0ns (nominal) SDRAM stack PLL 120Ω OUT1 SDRAM stack 120Ω CK0 IN /CK0 240Ω 120Ω OUT'N' Register C Feedback Notes: 1. The clock delay from the input of the PLL clock to the input of any SDRAM or register willl be set to 0 ns (nominal). 2. Input, output and feedback clock lines are terminated from line to line as shown, and not from line to ground. 3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired in a similar manner. 4. Termination resistors for feedback path clocks are located after the pins of the PLL. Preliminary Data Sheet E0273E20 (Ver. 2.0) 9 EBD21RD4ABNA Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 200 µs and then, execute power on sequence and auto refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VT –1.0 to +3.6 V Supply voltage relative to VSS VDD, VDDQ –1.0 to +3.6 V Short circuit output current IOUT 50 mA Power dissipation PT 18 W Operating ambient temperature TA 0 to +70 °C Storage temperature Tstg –55 to +125 °C Note 1 Note: 1. DDR SDRAM device specification Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Operating Conditions (TA = 0 to +70°C) Parameter Symbol Min Typ Max Unit Notes Supply voltage VDD,VDDQ 2.3 2.5 2.7 V 1 VSS 0 0 0 V VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V Termination voltage VTT VREF – 0.04 VREF VREF + 0.04 V Input high voltage VIH (DC) VREF + 0.15 — VDDQ + 0.3 V 2 Input low voltage VIL (DC) –0.3 — VREF – 0.15 V 3 VIN (DC) –0.3 — VDDQ + 0.3 V 4 VIX (DC) 0.5 × VDDQ − 0.2V 0.5 × VDDQ 0.5 × VDDQ + 0.2V V VID (DC) 0.36 — VDDQ + 0.6 Input reference voltage Input voltage level, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input differential voltage, CK and /CK inputs V 5, 6 Notes: 1.VDDQ must be lower than or equal to VDD. 2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns. 3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns. 4. VIN (DC) specifies the allowable dc execution of each differential input. 5. VID (dc) specifies the input differential voltage required for switching. 6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V if measurement. Preliminary Data Sheet E0273E20 (Ver. 2.0) 10 EBD21RD4ABNA DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V) Parameter Symbol Operating current (ACTV-PRE) IDD0 Operating current (ACTV-READ-PRE) IDD1 Idle power down standby current IDD2P Floating idle Standby current Quiet idle Standby current Active power down standby current IDD2F IDD2Q IDD3P Active standby current IDD3N Operating current (Burst read operation) Operating current (Burst write operation) IDD4R IDD4W Auto refresh current IDD5 Self refresh current IDD6 Operating current (4 banks interleaving) IDD7A Grade max. -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 3830 3550 4190 3910 427 420 1580 1390 -7A, -7B -10 1220 1210 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 -7A, -7B -10 1040 1030 2480 2290 4460 3820 4460 3820 6260 5800 463 457 7880 7240 Unit mA mA Test condition Notes CKE ≥ VIH, 1, 2, 9 tRC = tRC (min.) CKE ≥ VIH, BL = 4, 1, 2, 5 CL = 3.5, tRC = tRC (min.) mA CKE ≤ VIL 4 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 5 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 10 mA CKE ≤ VIL 3 mA mA mA mA mA mA CKE ≥ VIH, /CS ≥ VIH tRAS = tRAS (max.) CKE ≥ VIH, BL = 2, CL = 3.5 CKE ≥ VIH, BL = 2, CL = 3.5 tRFC = tRFC (min.), Input ≤ VIL or ≥ VIH Input ≥ VDD – 0.2 V Input ≤ 0.2 V BL = 4 3, 5, 6 1, 2, 5, 6 1, 2, 5, 6 5, 6, 7 Notes. 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one cycle. 6. Data/Data mask transition twice per one cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once per one every two clock cycles. 10. Command/Address stable at ≥ VIH or ≤ VIL. DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V) Parameter Symbol min. max. Unit Test condition Input leakage current IL –2 2 µA VDD ≥ VIN ≥ VSS Output leakage current IOZ –5 5 µA VDDQ ≥ VOUT ≥ VSS Output high current IOH –15.2 — mA VOUT = 1.95V Output low current IOL 15.2 — mA VOUT = 0.35V Preliminary Data Sheet E0273E20 (Ver. 2.0) 11 Notes EBD21RD4ABNA Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V) Parameter Symbol Pins Unit Notes Input capacitance CI1 Address, /RAS, /CAS, /WE, TBD /CS, CKE max. pF 1, 3 Input capacitance CI2 CK, /CK TBD pF 1, 3 Data and DQS input/output capacitance CO DQ, DQS, CB, DM TBD pF 1, 2, 3 Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V. 2. Dout circuits are disabled. 3. This parameter is sampled and not 100% tested. AC Characteristics (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V) (DDR SDRAM device Specification) -7A -7B -10 Parameter Symbol min. max min. max min. max Unit Notes Clock cycle time (CL = 2) tCK 7.5 12 10 12 10 12 ns 10 (CL = 2.5) tCK 7.5 12 7.5 12 10 12 ns CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK half period tHP min (tCH, tCL) — min (tCH, tCL) — min (tCH, tCL) — tCK –0.75 0.75 –0.75 0.75 –0.8 0.8 ns 2, 11 –0.75 0.75 –0.75 0.75 –0.8 0.8 ns 2, 11 0.6 ns 3 DQ output access time from tAC CK, /CK DQS output access time from CK, tDQSCK /CK DQS to DQ skew tDQSQ — 0.5 — 0.5 — DQ/DQS output hold time from DQS tQH tHP – tQHS — tHP – tQHS — tHP – tQHS — ns Data hold skew factor tQHS — 0.75 — 0.75 — 1.0 ns –0.75 0.75 –0.75 0.75 –0.8 0.8 ns 5, 11 –0.75 0.75 –0.75 0.75 –0.8 0.8 ns 6, 11 Data-out high-impedance time tHZ from CK, /CK Data-out low-impedance time from tLZ CK, /CK Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQ and DM input setup time tDS 0.5 — 0.5 — 0.6 — ns 8 DQ and DM input hold time tDH 0.5 — 0.5 — 0.6 — ns 8 DQ and DM input pulse width tDIPW 1.75 — 1.75 — 2 — ns 7 Write preamble setup time tWPRES 0 — 0 — 0 — ns Write preamble tWPRE 0.25 — 0.25 — 0.25 — tCK Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK Write command to first DQS latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK DQS falling edge to CK setup time tDSS 0.2 — 0.2 — 0.2 — tCK DQS falling edge hold time from CK tDSH 0.2 — 0.2 — 0.2 — tCK DQS input high pulse width tDQSH 0.35 — 0.35 — 0.35 — tCK DQS input low pulse width tDQSL 0.35 — 0.35 — 0.35 — tCK Preliminary Data Sheet E0273E20 (Ver. 2.0) 12 9 EBD21RD4ABNA -7A Parameter -7B -10 Symbol min. max min. max min. max Unit Notes tIS 0.9 — 0.9 — 1.1 — ns 8 tIH 0.9 — 0.9 — 1.1 — ns 8 tIPW 2.2 — 2.2 — 2.5 — ns 7 tMRD 2 — 2 — 2 — tCK tRAS 45 120000 45 120000 50 120000 ns tRC 67.5 — 67.5 — 70 — ns tRFC 75 — 75 — 80 — ns Active to Read/Write delay tRCD 20 — 20 — 20 — ns Precharge to active command period tRP 20 — 20 — 20 — ns Active to auto precharge delay tRAP tRCD min. — tRCD min. — tRCD min. — ns Active to active command period tRRD 15 — 15 — 15 — ns Write recovery time tWR 15 — 15 — 15 — ns tDAL (tWR/tCK) — +(tRP/tCK) (tWR/tCK) — +(tRP/tCK) (tWR/tCK) — +(tRP/tCK) tCK tWTR 1 — 1 — 1 — tCK tREF — 7.8 — 7.8 — 7.8 µs Address and control input setup time Address and control input hold time Address and control input pulse width Mode register set command cycle time Active to Precharge command period Active to Active/Auto refresh command period Auto refresh to Active/Auto refresh command period Auto precharge write recovery and precharge time Internal write to Read command delay Average periodic refresh interval 13 Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter definitions, see ‘Timing Waveforms’ section. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VTT. 3. The timing reference level is VTT. 4. Output valid window is defined to be the period between two successive transition of data out or DQS (read) signals. The signal transition is defined to occur when the signal level crossing VTT. 5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. Input valid windows is defined to be the period between two successive transition of data input or DQS (write) signals. The signal transition is defined to occur when the signal level crossing VREF. 8. The timing reference level is VREF. 9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not assured. 11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these values are 10% of tCK. 12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than 0.4V/400 cycle. Preliminary Data Sheet E0273E20 (Ver. 2.0) 13 EBD21RD4ABNA 13. tDAL = (tWR/tCK)+(tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns, tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3) tDAL = 5 clocks Timing Parameter Measured in Clock Cycle for Registered DIMM Number of clock cycle Parameter Symbol min. Write to pre-charge command delay (same bank) tWPD 3 + BL/2 max. Read to pre-charge command delay (same bank) tRPD BL/2 Write to read command delay (to input all data) tWRD 2 + BL/2 Burst stop command to write command delay (CL = 3) tBSTW 2 (CL = 3.5) tBSTW 3 Burst stop command to DQ High-Z (CL = 3) tBSTZ 3 3 (CL = 3.5) tBSTZ 3.5 3.5 Read command to write command delay (to output all data) (CL = 3) tRWD 2 + BL/2 (CL = 3.5) tRWD 3 + BL/2 Pre-charge command to High-Z (CL = 3) tHZP 3 (CL = 3.5) tHZP 3.5 3.5 Write command to data in latency tWCD 2 2 Write recovery tWR 1 Register set command to active or register set command tMRD 2 Self refresh exit to non-read command tSNR 10 Self refresh exit to read command tSRD 200 Power down entry tPDEN 1 Power down exit to command input tPDEX 1 Preliminary Data Sheet E0273E20 (Ver. 2.0) 14 3 1 EBD21RD4ABNA Pin Functions CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9, AY11, AY12) is loaded via theA0 to the A9, the A11 and the A12 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. BA0, BA1 (input pin) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. DQ, CB (input and output pins) Data are input to and output from these pins. DQS (input and output pin) DQS provide the read data strobes (as output) and the write data strobes (as input). Preliminary Data Sheet E0273E20 (Ver. 2.0) 15 EBD21RD4ABNA VDD and VDDQ (power supply pins) 2.5V is applied. (VDD is for the internal circuit and VDDQ is for the output buffer.) VDDSPD (power supply pin) 2.5V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected. /RESET (input pin) LVCMOS reset input. When /RESET is low, all registers are reset and all outputs are low. Detailed Operation Part, AC Characteristics and Timing Waveforms Refer to the EDD5104AB, EDD5108AB datasheet (E0237E). DM pins of component device fixed to VSS level on the module board. DIMM /CAS latency = component CL + 1 for registered type. Preliminary Data Sheet E0273E20 (Ver. 2.0) 16 EBD21RD4ABNA Physical Outline Unit: mm 133.35 ± 0.15 128.95 4.80 4.00 min (DATUM -A-) (64.48) 2.30 Component area (Front) 1 92 B 64.77 A 1.27 ± 0.10 49.53 4.00 ± 0.10 Component area (Back) R 2.00 30.48 ± 0.15 184 17.80 93 10.00 2 – φ 2.50 ± 0.10 3.00 min Detail B (DATUM -A-) 1.27 typ 6.62 0.20 ± 0.15 2.50 ± 0.20 Detail A 2.175 R 0.90 3.80 6.35 1.00 ± 0.05 1.80 ± 0.10 Note: Tolerance on all dimensions ± 0.13 unless otherwise specified. ECA-TS2-0058-01 Preliminary Data Sheet E0273E20 (Ver. 2.0) 17 EBD21RD4ABNA CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. MDE0202 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Preliminary Data Sheet E0273E20 (Ver. 2.0) 18 EBD21RD4ABNA The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Preliminary Data Sheet E0273E20 (Ver. 2.0) 19