ON MBR2535CTG Switchâ mode power rectifier Datasheet

MBR2535CTG,
MBR2545CTG
Switch‐mode
Power Rectifiers
The MBR2535CTG/45CTG series uses the Schottky Barrier
principle with a platinum barrier metal. These state-of-the-art devices
have the following features:
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS
Features
•
•
•
•
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Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
These are Pb-Free Devices*
1
2, 4
Mechanical Characteristics
•
•
•
•
•
3
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
4
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
B25x5G
AKA
A
Y
WW
B25x5
x
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR2535CTG
TO−220
(Pb−Free)
50 Units/Rail
MBR2545CTG
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 15
1
Publication Order Number:
MBR2535CT/D
MBR2535CTG, MBR2545CTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR2535CTG
MBR2545CTG
VRRM
VRWM
VR
V
Average Rectified Forward Current
(Rated VR, TC = 160°C)
Per Device
Per Diode
IF(AV)
Peak Repetitive Forward Current
per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFRM
Non-Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
ESD
35
45
A
30
15
A
30
A
150
V
> 400
> 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol
Value
RJC
RJA
1.5
50
Unit
°C/W
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient (Note 2)
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VF
Instantaneous Forward Voltage
(Note 3)
IF = 15 Amp, TJ = 25°C
IF = 15 Amp, TJ = 125°C
IF = 30 Amp, TJ = 25°C
IF = 30 Amp, TJ = 125°C
−
−
−
−
−
0.50
−
0.65
0.62
0.57
0.82
0.72
V
IR
Instantaneous Reverse Current
(Note 3)
Rated dc Voltage, TJ = 25°C
Rated dc Voltage, TJ = 125°C
−
−
−
9.0
0.2
25
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
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2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR2535CTG, MBR2545CTG
1000
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
10
150°C
1.0
25°C
0.1
0
0.2
0.4
0.6
0.8
1.2
1.0
1.4
1.6
100°C
75°C
25°C
0
1.8
10
20
30
50
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Current, Per Leg
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
44
40
36
32
dc
28
24
SQUARE WAVE
20
16
12
RATED VOLTAGE APPLIED
RJC = 1.5°C/W
110
125°C
VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
48
8.0
4.0
0
TJ = 150°C
IR , REVERSE CURRENT (mA)
TJ = 125°C
120
130
140
150
160
170
48
RATED VR APPLIED
44
40
36
RJA = 16°C/W
(With TO-220 Heat Sink)
RJA = 60°C/W
(No Heat Sink)
dc
32
28
24
20
16
SQUARE WAVE
12
8.0
dc
4.0
0
180
SQUARE WAVE
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating, Per Device
Figure 4. Current Derating, Per Device
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
100
32
SQUARE WAVE
I
(RESISTIVELOAD) PK + I
28
AV
24
I
(CAPACITATIVELOAD) PK + 5.0
I
20
dc
AV
16
10
12
20
8.0
TJ = 125°C
4.0
0
0
4.0
8.0
12
16
20
24
28
32
IF, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Forward Power Dissipation
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3
36
40
180
MBR2535CTG, MBR2545CTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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MBR2535CT/D
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