JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N06 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 50 Pulsed Drain Current IDM 220 Single Pulsed Avalanche Energy* EAS 115 mJ Power Dissipation PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient V A ℃ *EAS condition: Tj=25℃,VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-3,Jan,2016 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 60 Zero gate voltage drain current IDSS VDS =60V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =20A 20 mΩ gFS VDS =25V, ID =20A V On characteristics (note1) Forward transconductance 1.5 17 24 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =25V,VGS =0V, f =1MHz 900 pF 104 33 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf VDS=30V, VGS=10V, ID=50A VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω 30 nC 10 5 25 5 ns 50 6 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current 1.2 V IS 50 A ISM 220 A VSD VGS =0V, IS=40A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A-3,Jan,2016 Typical Characteristics Transfer Characteristics Output Characteristics 1000 1000 VDS=25.0V Ta=25℃ (A) VGS= 7V ID VGS= 6V VGS= 5.5V DRAIN CURRENT (A) VGS= 8V 100 ID DRAIN CURRENT Pulsed Pulsed VGS= 15,10V VGS= 5V 10 VGS= 4.5V 100 Ta=25℃ 10 1 0.1 0.1 1 10 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 1 100 VDS (m) VGS=4.5V RDS(ON) 24 ON-RESISTANCE (m) 9 VGS 10 (V) 20 18 16 VGS=10V 14 48 44 40 36 32 28 20 16 10 12 10 20 30 40 DRAIN CURRENT 50 ID 60 70 8 80 Ta=100℃ 24 12 0 Pulsed ID=20A 52 28 RDS(ON) 8 56 Pulsed 30 ON-RESISTANCE 7 RDS(ON)—— VGS ID Ta=25℃ 32 8 6 60 34 22 5 GATE TO SOURCE VOLTAGE 36 26 4 (V) Ta=25℃ 3 (A) 4 5 7 8 VGS 9 10 (V) Threshold Voltage IS —— VSD 100 6 GATE TO SOURCE VOLTAGE 2.50 Pulsed 2.25 2.00 VTH Ta=100℃ Ta=25℃ 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 10 0.1 0.01 1.75 1.50 ID=250uA 1.25 1.00 0.75 1E-3 0 200 400 600 800 1000 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1200 1400 0.50 25 1600 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Jan,2016 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 4 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. A-3,Jan,2016 To-252(4R)-2L Tape and Reel www.cj-elec.com 5 A-3,Jan,2016