PD - 93969 IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) ™ RAD-Hard ® HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154Ω 0.154Ω ID -29A -29A QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 TM HEXFET® International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range -29 -18 -116 300 2.4 ±20 500 -29 30 -20 -55 to 150 Pckg. Mounting Surface Temp. Weight 300 (for 5s) 3.3 (Typical) A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 11/21/00 IRHNA9260, JANSR2N7426U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -200 — — V — -0.27 — V/°C — — -2.0 14 — — — — — — — — 0.154 0.159 -4.0 — -25 -250 Ω ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 -100 100 300 65 58 37 141 148 220 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6143 915 159 — — — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -18A ➃ VGS = -12V, ID = -29A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -18A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -29A VDS = -100V V S( ) Ω BVDSS µA nA nC VDD = -100V, ID = -29A RG = 2.35Ω ns nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr QRR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -29 -116 -3.0 738 12 Test Conditions A V ns µC Tj = 25°C, IS = -29A, VGS = 0V ➃ Tj = 25°C, IF = -29A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 1.6 0.42 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA9260, JANSR2N7426U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) V SD Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃ Units 300K Rads (Si)2 Min Max — -200 -4.0 -2.0 -100 — 100 — - 25 — 0.155 — — -5.0 -100 100 -25 0.161 — 0.154 — — -3.0 — -200 -2.0 — — — — Max Test Conditions µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-18A 0.160 Ω VGS = -12V, ID = -18A -3.0 V V nA VGS = 0V, IS = -29A 1. Part number IRHNA9260 2. Part number IRHNA93260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 VDS (V) Range (µm) 43.0 39.0 @VGS=0V @VGS=5V @VGS=10V -200 -200 -200 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V — — -250 VDS -200 -150 Cu Br -100 -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA9260, JANSR2N7426U 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 -5.0V 20µs PULSE WIDTH T = 25 C J 10 1 -5.0V 10 1 V DS = -50V 20µs PULSE WIDTH 9.0 10.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 100 8.0 10 100 Fig 2. Typical Output Characteristics 2.5 7.0 ° -VDS , Drain-to-Source Voltage (V) 1000 6.0 J 10 100 Fig 1. Typical Output Characteristics 10 5.0 20µs PULSE WIDTH T = 150 C ° -VDS , Drain-to-Source Voltage (V) 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -29A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 Ciss 6000 4000 C oss 2000 20 -VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHNA9260, JANSR2N7426U ID = -29A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 C rss 0 0 1 10 0 100 100 150 200 250 300 350 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 -I D, Drain-to-Source Current (A) 1000 -ISD , Reverse Drain Current (A) 50 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) TJ = 150 ° C 100 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 100µs 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA9260, JANSR2N7426U Pre-Irradiation 30 RD V DS VGS 25 D.U.T. -ID , Drain Current (A) RG + V DD 20 -12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA9260, JANSR2N7426U VD D IA S -20V -12V A D R IV E R 0.01 Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) D .U .T. RG 1200 L VDS ID -13A -18.3A BOTTOM -29A TOP 900 600 300 0 25 IAS 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -12 V QGS QGD D.U.T. VGS VG -3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com +VDS ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA9260, JANSR2N7426U Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature. ➁ VDD =-50V, starting TJ = 25°C, L = 1.2mH, Peak IL= -29A, VGS = -12V ➂ ISD ≤ - 29A, di/dt ≤ -377A/µs, VDD ≤ - 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00 8 www.irf.com