APA3010P3BT-P22 3.0 mm x 1.0 mm Right Angle Phototransistor DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES z z z z z z 3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens Package: 2000 pcs / reel Moisture sensitivity level: 3 Tinned pads for improved solderability RoHS compliant tia l z z z z on fid z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology en APPLICATIONS RECOMMENDED SOLDERING PATTERN C (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.15(0.006") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation at(or below) 25°C Free Air Temperature Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAO8735 / 1203000588 Rev No: V.5 Date: 02/10/2018 Page 1 / 4 APA3010P3BT-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C Parameter Symbol Min. Typ. Max. Units Test Conditions V BR CEO 30 - - V IC = 100uA Ee = 0mW/cm2 Emitter-to-Collector Breakdown Voltage VBR ECO 5 - - V IE = 100uA Ee = 0mW/cm2 Collector-to-Emitter Saturation Voltage VCE (SAT) - - 0.8 V IC = 2mA Ee = 20mW/cm2 Collector Dark Current ICEO - - 100 nA VCE = 10V Ee = 0mW/cm2 Rise Time(10% to 90%) TR - Fall Time(90% to 10%) TF - I(ON ) λ0.1 Wavelength of peak Sensitivity µS 15 - µS VCE = 5V IC = 1mA RL = 1000Ω 0.3 - mA VCE = 5V Ee = 1mW/cm2 λ = 940nm 670 - 1070 nm - λp - 940 - nm - 2θ1/2 - 160 - deg - C Angle of half sensitivity - 0.1 on fid Range of spectral bandwidth 15 en On State Collector Current tia l Collector-to-Emitter Breakdown Voltage TECHNICAL DATA RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 80% 40% 20% 700 0° -30° 60% 0% 600 -15° Ta = 25 °C Ta = 25 °C Relative sensitivity Relative spectral sensitivity (a. u.) RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH 800 900 Wavelength (nm) 1000 1100 1200 © 2018 Kingbright. All Rights Reserved. Spec No: DSAO8735 / 1203000588 Rev No: V.5 Date: 02/10/2018 15° 30° -45° 45° 60° -60° 75° -75° -90° 1.0 0.5 0.0 0.5 90° 1.0 Page 2 / 4 APA3010P3BT-P22 TECHNICAL DATA PHOTOTRANSISTOR Collector Current vs. Collector-Emitter Voltage 0.5 VCE=5V Ta = 25 °C Collector current (mA) 1 0.1 0.01 0.01 Ta = 25 °C 0.4 0.3 Ee = 1mW/cm 0.2 1 10 2 Ee = 0.25mW/cm 2 Collector Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 10 0.1 100 75 50 25 on fid 1 Collector power dissipation Pd (mW) 100 25 50 75 100 Ambient temperature (°C) 100 80 60 40 20 0 20 40 60 80 Ambient temperature (°C) 100 Collector Dark Current vs. Collector-Emitter Voltage 0 20 40 60 80 Ambient temperature (°C) 1 0.1 100 0 5 10 15 20 25 30 Collector-emitter voltage VCE (V) TAPE SPECIFICATIONS (units : mm) C REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS Ta = 25 °C 0.01 0 0 120 10 125 VCE = 20V Ee = 0 VCE=5V 2 Ee=1mW/cm 140 0 Collector dark current (nA) 1000 160 tia l Irradiance Ee (mW/cm ) 0 1 2 3 4 5 Collector-emitter voltage VCE (V) 2 Collector dark current (nA) Ee = 0.5mW/cm 0.1 0 0.1 2 en Collector current Ic (mA) 10 Relative Collector Current vs. Ambient Temperature Relative collector current (%) Collector Current vs. Irradiance REEL DIMENSION (units : mm) Notes: 1. Don't cause stress to the LEDs while it is exposed to high temperature. 2. The maximum number of reflow soldering passes is 2 times. 3. Reflow soldering is recommended. Other soldering methods are not recommended as they might cause damage to the product. © 2018 Kingbright. All Rights Reserved. Spec No: DSAO8735 / 1203000588 Rev No: V.5 Date: 02/10/2018 Page 3 / 4 APA3010P3BT-P22 C on fid en tia l PACKING & LABEL SPECIFICATIONS PRECAUTIONARY NOTES 1. The information included in this document reflects representative usage scenarios and is intended for technical reference only. 2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to the latest datasheet for the updated specifications. 3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues. 4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance. 5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright. 6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes © 2018 Kingbright. All Rights Reserved. Spec No: DSAO8735 / 1203000588 Rev No: V.5 Date: 02/10/2018 Page 4 / 4