AP92U03GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
4.5mΩ
ID
G
80A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widly preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
1
Rating
Units
30
V
+20
V
80
A
53
A
320
A
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
50
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Parameter
Data & specifications subject to change without notice
1
201012281
AP92U03GP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
4.5
mΩ
VGS=4.5V, ID=30A
-
-
7.5
mΩ
V
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=40A
-
70
-
S
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
34
54
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=30A
-
70
-
ns
td(off)
Turn-off Delay Time
RG=2.4Ω
-
34
-
ns
tf
Fall Time
VGS=10V
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
2685 4300
pF
Coss
Output Capacitance
VDS=25V
-
405
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
345
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
33
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Package limitation current is 80A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92U03GP-HF
240
160
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
200
o
T C =150 C
ID , Drain Current (A)
T C =25 o C
V G = 4.0V
160
120
80
10V
7.0V
6.0V
5.0V
120
V G =4.0V
80
40
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
10.0
1.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
5.0
6.0
Fig 2. Typical Output Characteristics
2.0
6
I D =30A
I D =40A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
3.0
V DS , Drain-to-Source Voltage (V)
5
1.6
1.2
4
0.8
0.4
3
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
30
1.2
Normalized VGS(th) (V)
1.6
IS(A)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
o
T j =150 C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP92U03GP-HF
f=1.0MHz
4000
I D =30A
8
V DS =15V
V DS =18V
V DS =24V
6
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
60
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4