Transistors SMD Type PNP Transistors BC807W (KC807W) ■ Features ● Ldeally suited for automatic insertion ● Epitaxial planar die construction ● Complementary to BC817W 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.2 W RθJA 625 ℃/W Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -0.1 Collector- emittercut-off current ICEO VCE= -20 V , IE=0 -0.2 IEBO Emitter cut-off current V VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50mA -0.7 Base - emitter saturation voltage VBE(sat) IC= -500 mA, IB=- 50mA -1.2 DC current gain Collector output capacitance hFE(1) VCE= -1V, IC= -100mA 100 hFE(2) VCE=- 1V, IC= -500mA 40 Cob Transition frequency fT VCB= -10V,f=1MHz VCE= -5V, IC= -10mA,f=100MHz uA V 600 10 80 Unit pF MHz ■ Classification of hfe(1) Type BC807W-16 BC807W-25 BC807W-40 Range 100-250 160-400 250-600 Marking 5A 5B 5C www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC807W (KC807W) ■ Typical Characterisitics Static Characteristic -400uA -360uA -320uA -100 -280uA -240uA -80 -200uA -60 -160uA -0.5 -1.0 -1.5 -2.0 10 -0.1 -2.5 -1 VCE (V) —— IC -100 Ta=100 ℃ -10 COLLECTOR CURRENT V BEsat -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) V CEsat -1000 IC -100 -500 (mA) —— I C -900 Ta=25℃ -600 Ta=100 ℃ Ta=25℃ -10 β=10 -0.3 -1 -10 COLLECTOR CURREMT IC -500 IC —— V BE T= a 10 0℃ COMMON EMITTER VCE= -1V -0 100 -300 -600 -900 —— V CB /VEB 10 1 -0.1 www.kexin.com.cn COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib Cob -1 REVERSE VOLTAGE V (V) -10 -20 -100 -500 (mA) —— IC fT COMMON EMITTER VCE=-5V Ta=25℃ -1 -10 COLLECTOR CURRENT PC 250 f=1MHz IE=0/IC=0 IC 100 10 -1200 BESE-EMMITER VOLTAGE VBE (mV) C ob /Cib -10 COLLECTOR CURREMT 500 -1 -0.1 -1 (mA) -100 -10 β=10 -300 -0.1 -500 -100 T =2 5℃ a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COMMON EMITTER VCE= -1V IB= -40uA COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (mA) 100 -80uA -0 -0.0 CAPACITANCE C (pF) Ta=25℃ -120uA -40 -20 2 —— IC Ta=100℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) -140 -120 h FE 1000 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE -160 —— a IC -100 (mA) T 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125 150