CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTE020N10RJ3 BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A Features 100V 30A 20.5mΩ(typ) • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTE020N10RJ3 D D G：Gate D：Drain S：Source S G Ordering Information Device MTE020N10RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE020N10RJ3 CYStek Product Specification Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current Avalanche Current @L=0.1mH Avalanche Energy @ L=1mH, ID=15A, VDD=25V Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS 100 ±25 30 21.2 7 4.4 5.7 3.6 100 32 112 60 30 2.5 1.0 1.7 0.7 -55~+175 ID *2 *2 *3 IDSM *3 *1 *4 IDM IAS EAS PD *2 *2 *3 PDSM *3 Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c *2 Rth,j-a *3 Value 2.5 50 75 Unit °C/W Note : *1. Pulse width limited by maximum junction temperature *2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper. *3. When the device is on the minimum pad size recommended. *4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V. *5. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. *6. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS MTE020N10RJ3 Min. Typ. Max. Unit Test Conditions 100 2 - 0.1 11.3 - 4 ±100 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=20A VGS=±25V, VDS=0V CYStek Product Specification CYStech Electronics Corp. IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 20.5 1 25 30 - 15.9 5.9 4.4 14 16 20.8 7.2 975 160 21 1.2 - - 0.74 27.9 31.6 30 100 1 - μA mΩ Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 3/9 VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=20A nC ID=20A, VDS=50V, VGS=10V ns VDS=50V, ID=20A, VGS=10V, RG=3Ω pF VGS=0V, VDS=50V, f=1MHz Ω f=1MHz A V ns nC IS=1A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTE020N10RJ3 CYStek Product Specification Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V ID, Drain Current (A) 50 BVDSS, Normalized Drain-Source Breakdown Voltage 60 8V 40 7V 30 6.5V 20 6V 10 5.5V VGS=5V 1 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1.2 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 300 2.8 ID=20A 250 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 200 150 100 50 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 20.5mΩ typ. 0.4 0 0 0 MTE020N10RJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 -50 -25 50 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=10V 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 1 VDS=15V 0.1 Ta=25°C Pulsed VDS=20V, 50V, 80V from left to right 8 6 4 2 ID=20A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 Qg, Total Gate Charge(nC) 20 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 40 100 RDSON Limited ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 100μs 1ms 10 10ms TC=25°C, Tj=175°C VGS=10V, RθJC=2.5°C/W Single Pulse 1 100ms 1s DC 35 30 25 20 15 10 VGS=10V, RθJC=2.5°C/W 5 0 0.1 0.1 MTE020N10RJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 3500 60 VDS=5V 3000 TJ(MAX) =175°C TC=25°C RθJC=2.5°C/W 2500 40 Power (W) ID, Drain Current(A) 50 30 2000 1500 20 1000 10 500 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE020N10RJ3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE020N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE020N10RJ3 CYStek Product Specification Spec. No. : C745J3 Issued Date : 2017.10.26 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E020 N10R Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE020N10RJ3 CYStek Product Specification