PHILIPS BU4508DZ Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
VBE = 0 V
5.0
1.85
300
1500
800
8
15
32
3.0
2.2
400
V
V
A
A
W
V
A
V
ns
PINNING - SOT186A
PIN
Ths ≤ 25 ˚C
IC = 5.0 A; IB = 1.25 A
f= 16 kHz
IF = 5 A
ICsat = 5 A; f = 16kHz
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
b
Rbe
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
8
15
4
6
5
32
150
150
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
4.0
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
13.5
25
-
-
V
Ω
V
0.85
4.2
-
0.94
7
5.7
1.85
3.0
1.03
7.3
2.2
V
V
TYP.
MAX.
UNIT
2.75
3.75
µs
300
400
ns
IF = 4 A; dIF/dt = 50 A/µs
19
-
V
VF = 5 V
500
-
ns
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ICES
ICES
BVEBO
Rbe
VCEOsust
VCEsat
VBEsat
hFE
hFE
VF
PARAMETER
Collector cut-off current
CONDITIONS
2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
Emitter-base breakdown voltage
IB = 600 mA
Base-emitter resistance
VEB = 6 V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A
Base-emitter saturation voltage
IC = 5.0 A; IB = 1.25 A
DC current gain
IC = 500 mA; VCE = 5 V
IC = 5.0 A; VCE = 5 V
Diode forward voltage
IF = 5 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A)
ts
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
tf
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
tfr
2 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU4508DZ
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IB1
IB
t
20us
26us
D.U.T.
IB2
LB
IBend
Cfb
64us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms (16 kHz).
Fig.4. Switching times test circuit.
ICsat
100
90 %
hFE
BU4508DF/X/Z
Ths = 25 C
Ths = 85 C
VCE = 1V
IC
10 %
tf
10
t
ts
IB
IB1
t
1
0.01
- IB2
Fig.2. Switching times definitions.
I
I
F
0.1
1
IC / A
10
Fig.5. High and low DC current gain.
100
F
BU4508DF/X/Z
hFE
Ths = 25 C
Ths = 85 C
VCE = 5V
10%
time
t fr
V
10
F
V
5V
V
fr
F
1
0.01
time
Fig.3. Definition of anti-parallel diode Vfr and tfr.
February 1999
0.1
1
IC / A
10
Fig.6. High and low DC current gain.
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DF/X/Z
VCESAT \ V
10
BU4508DZ
120
Normalised Power Derating
PD%
with heatsink compound
110
Ths = 25 C
Ths = 85 C
100
90
80
70
1
60
50
40
0.1
30
20
10
0
0.01
0.1
1
10
0
100
IC / A
40
60
80
Ths / C
100
120
140
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Fig.7. Typical collector-emitter saturation voltage.
BU4508DF/X/Z
VBESAT / V
20
10
1.2
Zth K/W
BU4508AZ
Ths = 25 C
Ths = 85 C
0.5
1.1
1
0.2
0.1
1
0.05
0.1
0.9
0.02
IC = 5 A
0.8
PD
0.01
tp
D=
tp
T
0.7
0
T
0.6
0
1
2
3
IB / A
0.001
1.0E-07
4
ts/tf/ us
1.0E-03
1.0E-01
t
1.0E+01
t/s
Fig.8. Typical base-emitter saturation voltage.
10
1.0E-05
Fig.11. Transient thermal impedance.
BU4508D ts/tf
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
8
6
4
2
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.9. Typical collector storage and fall time.
IC =5 A; Tj = 85˚C; f = 16kHz
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
6
Rev 1.000
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