GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0200 Rev.2.00 Jul. 14, 2005 Features • Including Clamping Zener VCL = 400 V(typ) • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 4 1 1 2 2 C 1. Gate 2. Collector 3. Emitter 4. Collector G 3 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to Emitter voltage Emitter to Collector voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25°C Rev.2.00 Jul. 14, 2005, page 1 of 7 Symbol Ratings Unit VCES VGES VECS IC iC(peak) PCNote1 Tj 370 ±20 24 14 18 60 150 V V V A A W °C Tstg –55 to +150 °C GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Electrical Characteristics (Ta = 25°C) Item Symbol Collector to Emitter breakdown voltage Gate to Emitter breakdown voltage Collector cutoff current Gate cutoff current V(BR)CES Min 370 Typ 400 Max 430 Unit V Test Conditions Ic = 2 mA, VGE = 0 V — — — 1.4 — 100 ±100 1.7 V µA µA V IG = ±100 µA, VCE = 0 V VCE = 300 V, VGE = 0 V VGE = ±20 V, VCE = 0 V IC = 8 A, VGE = 10 V Collector to emitter saturation voltage VCE(sat)1 ±20 — — — Collector to emitter saturation voltage Gate to emitter cutoff voltage Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reveres transfer capacitance VCE(sat)2 — 1.6 2.2 V IC = 8 A, VGE = 4 V VGE(off) td(on) tr td (off) tf Ciss Coss Cres 1.3 — — — — — — — — 0.2 0.4 1.0 5 1110 75 18 2.2 — — — — — — — V µs µs µs µs pF pF pF IC = 1 mA, VCE = 10 V Secondary breakdown energy Es/b 230 — — mJ L = 5 mH Rev.2.00 Jul. 14, 2005, V(BR)GES ICES IGES page 2 of 7 VCE = 300 V, RL = 50 Ω, VGE = 5 V, RG = 200 Ω VCE = 10 V, VGE = 0, f = 1 MHz GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating IC (A) 100 60 Collector Current Collector Dissipation Pc (W) 80 40 20 10 DC PW Op er = 10 on m s 1s (T c= 1 1m s( ati 10 µs 10 0 µs ho t) 25 °C ) 0.1 Ta = 25°C 0.01 0 0 50 100 150 Case Temperature 200 1 Tc (°C) IC (A) 450 Collector Current Collector to Emitter Breakdown Voltage V(BR)CES (V) 10 400 350 IC = 2 mA 50 100 Pulse Test 4V 6 4 2 VGE = 2 V 0 16 12 8 25°C Tc = 125°C -40°C 0 2 3 Gate to Emitter Voltage page 3 of 7 4 5 VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) (A) 6V 2 4 6 8 10 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage IC Collector Current 1000 Collector to Emitter Voltage VCE (V) VCE = 10 V Pulse Test Jul. 14, 2005, 300 8 Tc (°C) 20 Rev.2.00 10 V 15 V 150 Typical Transfer Characteristics 1 100 0 0 Case Temperature 0 30 Typical Output Characteristics 500 4 10 Collector to Emitter Voltage VCE (V) Collector to Emitter Breakdown Voltage vs. Case Temperature 300 -50 3 5 Pulse Test 4 3 IC = 10 A 2 1 0 8A 0 4 8 6A 12 Gate to Emitter Voltage 16 20 VGE (V) GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Typical Capacitance vs. Collector to Emitter Voltage 10 10000 5 3000 Capacitance C (pF) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current -40°C 2 25°C 1 Tc = 125°C 0.5 0.2 VGE = 10 V Pulse Test 0.1 0.1 Cies 1000 300 100 Coes 30 Cres 10 VGE = 0 f = 1 MHz 3 1 1 0.3 3 10 Collector Current IC 30 100 0 (A) 12 30 8 20 10 4 VCE 0 20 40 60 Gate Charge 80 0 100 ISC (A) Secondary breakdown Current 100 50 25°C 10 Tc = 140°C 2 VCC = 16 V 1 0.1 VGE = 10 V, Rg = 200 Ω 0.2 0.5 1 2 5 Inductance Ratio L (mH) Rev.2.00 Jul. 14, 2005, td(off) 0.3 tr 0.1 td(on) 0.03 page 4 of 7 VCC = 300 V, VGE = 10 V Rg = 200 Ω, Ta = 25°C 0.2 0.5 1 2 Collector Current Secondary Breakdown Current vs. Inductance Ratio 5 tf 1 Qg (nc) 20 50 3 0.01 0.1 10 Secondary breakdown energy Es/b (mJ) 0 40 10 Switching Time t (µs) 16 VGE (V) VGE VCE = 16 V Gate to Emitter Voltage VCE (V) Collector to Emitter Voltage 40 30 Switching Characteristics 20 IC = 10 A Ta = 25°C 20 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics 50 10 5 10 IC (A) Secondary Breakdown Energy vs. Case Temperature 1000 500 200 100 50 20 10 25 VCC = 16 V, L = 5 mH VGE = 10 V, Rg = 200 Ω 50 75 100 Case Temperature Tc (°C) 125 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 0.3 D=1 0.5 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.05 t ho θch - c(t) = θs (t) • θch - c θch - c = 2.08°C/W, Tc = 25°C lse pu 1s PDM D= 0.03 PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Ic Monitor 90% R Vin Vin Monitor 10% 90% Rg D.U.T. V CC Ic Vin = 10 V td(on) Jul. 14, 2005, page 5 of 7 10% 10% tr ton Rev.2.00 90% td(off) tf toff GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] Unit: mm 1.30g (1.4) 4.44 ± 0.2 10.0 Rev.2.00 Jul. 14, 2005, 2.54 ± 0.5 page 6 of 7 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 + 0.3 – 0.5 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 (1.5) (1.5) 8.6 ± 0.3 10.2 ± 0.3 1.7 SC-83 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.86 +– 0.1 JEITA Package Code Unit: mm 2.2 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Ordering Information Part Name GN4014ZB4LD GN4014ZB4LS GN4014ZB4LM Quantity 50 pcs. 1000 pcs. 1000 pcs. Shipping Container Sack Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jul. 14, 2005, page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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