AUTOMOTIVE GRADE
AUIRF2804
AUIRF2804S
AUIRF2804L
Features
l
l
l
l
l
l
l
PD -96290
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
40V
1.5mΩk
RDS(on) typ.
max. 2.0mΩk
G
ID (Silicon Limited)
S
ID (Package Limited) 195A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
D
D
G
TO-220AB
AUIRF2804
Absolute Maximum Ratings
D
270A c
S
G
S
D
G
D2Pak
AUIRF2804S
D
S
TO-262
AUIRF2804L
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
270
Units
c
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
190
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
195
IDM
Pulsed Drain Current
Maximum Power Dissipation
1080
300
W
2.0
± 20
W/°C
V
EAS (tested)
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD @TC = 25°C
VGS
EAS
d
e
d
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
A
-55 to + 175
Mounting torque, 6-32 or M3 screw
l
mJ
mJ
Soldering Temperature, for 10 seconds
Junction-to-Case
540
1160
See Fig.12a,12b,15,16
d
RθJC
e
A
j
Typ.
Max.
–––
0.50
0.50
–––
–––
62
–––
40
Units
°C/W
1
02/19/10
AUIRF2804/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
RDS(on) TO-220
VGS(th)
gfs
IDSS
IGSS
Parameter
Min.
Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
40
–––
–––
–––
2.0
130
–––
–––
–––
–––
–––
0.031
1.5
1.8
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
2.0
2.3
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A **
mΩ
VGS = 10V, ID = 75A **
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 75A **
VDS = 40V, VGS = 0V
µA
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
160
41
66
13
120
130
130
240
62
99
–––
–––
–––
–––
–––
4.5
–––
nC
ns
nH
–––
7.5
–––
–––
–––
–––
–––
–––
–––
6450
1690
840
5350
1520
2210
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
pF
Conditions
ID = 75A **
VDS = 32V
VGS = 10V
VDD = 20V
ID = 75A **
RG = 2.5Ω
VGS = 10V
Between lead,
f
f
D
6mm (0.25in.)
from package
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
g
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
c
–––
–––
–––
1080
–––
–––
–––
–––
56
67
1.3
84
100
A
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 75A **, VGS = 0V
TJ = 25°C, IF = 75A **, VDD = 20V
di/dt = 100A/µs
S
V
ns
nC
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 195A. Note that current limitations arising
from heating of the device leads may occur with
some lead mounting arrangements.(Refer to AN-1140)
http://www.irf.com/technical-info/appnotes/an-1140.pdf
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
This value determined from sample failure population ,
starting T J = 25°C, L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V.
2
270
–––
Conditions
MOSFET symbol
ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
This value determined from sample failure population. 100%
tested to this value in production
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Max RDS(on) for D2Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W.
* * All AC and DC test condition based on old Package limitation
current = 75A.
www.irf.com
AUIRF2804/S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
MSL1
D2 PAK
Moisture Sensitivity Level
TO-220
N/A
TO-262
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
Class M4
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF2804/S/L
10000
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
TOP
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
4.5V
1000
15V
15V
10V
10V
8.0V
8.0V
7.0V
7.0V
6.0V
6.0V
5.5V
5.5V
5.0V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
20µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
300
G fs , Forward Transconductance ( S)
ID, Drain-to-Source Current (Α)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
100
T J = 25°C
10
VDS = 10V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
V
GS
250
T J = 25°C
200
T J = 175°C
150
100
50
VDS = 10V
20µs PULSE WIDTH
0
9.0
0
40
80
120
160
200
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRF2804/S/L
12000
20
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
8000
Ciss
6000
4000
Coss
2000
VDS= 32V
VDS= 20V
VDS= 8.0V
16
12
8
4
Crss
0
0
1
ID= 75A
10
0
100
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
10000
ID, Drain-to-Source Current (A)
1000.0
ISD, Reverse Drain Current (A)
40
T J = 175°C
100.0
10.0
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
2.2
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2804/S/L
300
2.0
ID, Drain Current (A)
250
200
150
100
50
0
25
50
75
100
125
150
175
ID = 75A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
Limited By Package
1.0
0.5
-60 -40 -20
T C , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-008
1E-007
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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1
AUIRF2804/S/L
15V
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
ID
31A
53A
BOTTOM 75A
TOP
1000
DRIVER
L
VDS
1200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
800
600
400
200
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRF2804/S/L
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF2804/S/L
D.U.T
Driver Gate Drive
+
-
P.W.
+
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
*
RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF2804/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF2804
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2804/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF2804S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF2804/S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRF2804L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF2804/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
13
AUIRF2804/S/L
Ordering Information
Base part
AUIRF2804
AUIRF2804L
AUIRF2804S
14
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
50
800
800
AUIRF2804
AUIRF2804L
AUIRF2804S
AUIRF2804STRL
AUIRF2804STRR
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AUIRF2804/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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IR products are neither designed nor intended for use in automotive applications or environments unless the
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including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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15