< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES Class A operation High output power P1dB=38.0dBm(TYP.) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E =45%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid APPLICATION For UHF Band power amplifiers QUALITY IG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=1.3A Rg=100 Refer to Bias Procedure Absolute maximum ratings Symbol VGDO VGSO ID IGR IGF PT*1 Tch Tstg (Ta=25C) Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings Unit -15 -15 5 -15 31.5 27.3 175 -65 to +175 V V A mA mA W C C *1:Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. Unit IDSS Saturated drain current VDS=3V,VGS=0V - - gm Transconductance VDS=3V,ID=1.3A - 1.5 Max. 5 - VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=10mA -2 - -5 V Output power at 1dB gain compression VDS=10V,ID(RF off)=1.3A 37 38 - dBm GLP Linear Power Gain f=2.3GHz 10 11 - dB P.A.E. Power added efficiency - 45 - % Rth(ch-c) *2 Thermal resistance - - 5.5 C/W ΔVf method *2 :Channel-case Publication Date : Apr., 2011 1 Typ. A S < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched MGF0910A TYPICAL CHARACTERISTICS( Ta=25deg.C ) ID vs. VGS ID vs. VDS Po, PAE vs. Pin (f=2.3GHz) GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched MGF0910A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.3(A) ) S11,S22 vs. f S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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