PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 COLLECTOR 3 3 1 2 2 BASE CASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS (T A = 25 °C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol V (BR)CBO V (BR)CEO V (BR)EBO IC I C(P) Value –60 –45 –7.0 –100 –200 Unit Vdc Vdc Vdc mAdc mAdc Symbol PD TJ T stg Max 200 150 –55 ~ +150 Unit mW °C °C THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristic Collector-Emitter Breakdown Voltage (IC=–2.0mAdc,IB=0) Collector-Base Breakdown Voltage (IC=–10µAdc,IE=0) Emitter-Base Breakdown Voltage (IE =–10µAdc,IE=0) Collector-Base Cutoff Current (VCB =–45Vdc, IE=0) Collector-Emitter Cutoff Current (VCE=–10Vdc, IB=0) DC Current Gain (1) (VCE=–10Vdc, IC = –2.0mAdc) Collector-Emitter Saturation Voltage (IC = –100mAdc, IB=–10mAdc) Symbol V (BR)CEO V(BR)CBO V (BR)EBO ICBO ICEO Min –45 –60 –7.0 — — Max — — — –0.1 –100 Unit Vdc Vdc Vdc µAdc nAdc hFE1 210 340 — VCE(sat) — –0.5 Vdc 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. DEVICE MARKING Marking Symbol ARX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N2–1/1